DE602004022012D1 - Vorrichtung und Verfahren zur Messung der Dielektrizitätseigenschaften in Halbleiterwafer - Google Patents

Vorrichtung und Verfahren zur Messung der Dielektrizitätseigenschaften in Halbleiterwafer

Info

Publication number
DE602004022012D1
DE602004022012D1 DE602004022012T DE602004022012T DE602004022012D1 DE 602004022012 D1 DE602004022012 D1 DE 602004022012D1 DE 602004022012 T DE602004022012 T DE 602004022012T DE 602004022012 T DE602004022012 T DE 602004022012T DE 602004022012 D1 DE602004022012 D1 DE 602004022012D1
Authority
DE
Germany
Prior art keywords
measuring
semiconductor wafers
dielectric properties
dielectric
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004022012T
Other languages
English (en)
Inventor
William H Howland Jr
Christine E Kalnas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solid State Measurements Inc
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Publication of DE602004022012D1 publication Critical patent/DE602004022012D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G01R27/2635—Sample holders, electrodes or excitation arrangements, e.g. sensors or measuring cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/312—Contactless testing by capacitive methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE602004022012T 2003-12-30 2004-12-21 Vorrichtung und Verfahren zur Messung der Dielektrizitätseigenschaften in Halbleiterwafer Expired - Fee Related DE602004022012D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/749,031 US7026837B2 (en) 2003-12-30 2003-12-30 Method and apparatus for determining the dielectric constant of a low permittivity dielectric on a semiconductor wafer

Publications (1)

Publication Number Publication Date
DE602004022012D1 true DE602004022012D1 (de) 2009-08-27

Family

ID=34574783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022012T Expired - Fee Related DE602004022012D1 (de) 2003-12-30 2004-12-21 Vorrichtung und Verfahren zur Messung der Dielektrizitätseigenschaften in Halbleiterwafer

Country Status (5)

Country Link
US (1) US7026837B2 (de)
EP (1) EP1550876B1 (de)
JP (1) JP4685434B2 (de)
DE (1) DE602004022012D1 (de)
TW (1) TW200523558A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860418B2 (en) 2012-07-27 2014-10-14 Schlumberger Technology Corporation Apparatus and method for measuring dielectric permitivity of cylindrical samples
JP6941482B2 (ja) * 2017-06-01 2021-09-29 住ベリサーチ株式会社 誘電特性測定治具、誘電特性測定装置および誘電特性測定方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236109A (en) * 1977-12-12 1980-11-25 Lockheed Corporation Dielectric monitored composite assembly
US4481616A (en) 1981-09-30 1984-11-06 Rca Corporation Scanning capacitance microscope
US4855667A (en) 1988-06-13 1989-08-08 E. I. Du Pont De Nemours And Company Parallel plate dielectric analyzer
JPH0427139A (ja) 1990-05-22 1992-01-30 Sony Corp Ｃ―ｖ測定方法
US5309110A (en) * 1992-03-04 1994-05-03 The Perkin Elmer Corporation Differential dielectric analyzer
US5500607A (en) * 1993-12-22 1996-03-19 International Business Machines Corporation Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer
US5528153A (en) * 1994-11-07 1996-06-18 Texas Instruments Incorporated Method for non-destructive, non-contact measurement of dielectric constant of thin films
US6324683B1 (en) * 1996-02-23 2001-11-27 International Business Machines Corporation System, method and program for debugging external programs in client/server-based relational database management systems
US6058393A (en) * 1996-02-23 2000-05-02 International Business Machines Corporation Dynamic connection to a remote tool in a distributed processing system environment used for debugging
JP3506875B2 (ja) * 1997-03-25 2004-03-15 大日本スクリーン製造株式会社 電気特性測定装置
US6172506B1 (en) * 1997-07-15 2001-01-09 Veeco Instruments Inc. Capacitance atomic force microscopes and methods of operating such microscopes
CN1138980C (zh) * 1997-10-31 2004-02-18 特瑞克股份有限公司 用于静电力显微镜的带悬臂梁静电力检测器及其检测方法
US6519571B1 (en) * 1999-05-27 2003-02-11 Accenture Llp Dynamic customer profile management
US6473794B1 (en) * 1999-05-27 2002-10-29 Accenture Llp System for establishing plan to test components of web based framework by displaying pictorial representation and conveying indicia coded components of existing network framework
US6536037B1 (en) * 1999-05-27 2003-03-18 Accenture Llp Identification of redundancies and omissions among components of a web based architecture
US6615166B1 (en) * 1999-05-27 2003-09-02 Accenture Llp Prioritizing components of a network framework required for implementation of technology
US6324647B1 (en) * 1999-08-31 2001-11-27 Michel K. Bowman-Amuah System, method and article of manufacture for security management in a development architecture framework
US6256773B1 (en) * 1999-08-31 2001-07-03 Accenture Llp System, method and article of manufacture for configuration management in a development architecture framework
US6629081B1 (en) * 1999-12-22 2003-09-30 Accenture Llp Account settlement and financing in an e-commerce environment
US20020087949A1 (en) * 2000-03-03 2002-07-04 Valery Golender System and method for software diagnostics using a combination of visual and dynamic tracing
TW494517B (en) * 2000-03-17 2002-07-11 Matsushita Electric Ind Co Ltd Method and apparatus for evaluating insulation film
US6220080B1 (en) * 2000-05-12 2001-04-24 Sigma Tech, Inc. Extended range and ultra precision non contact dimensional gauge for ultra thin wafers and work pieces
DE10061106B4 (de) 2000-12-07 2004-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Überprüfung elektrischer Materialeigenschaften
JP2005502886A (ja) * 2001-09-10 2005-01-27 パイオニア株式会社 誘電率測定装置、誘電体測定方法、及び情報記録・再生装置

Also Published As

Publication number Publication date
EP1550876A1 (de) 2005-07-06
JP2005197697A (ja) 2005-07-21
US7026837B2 (en) 2006-04-11
JP4685434B2 (ja) 2011-05-18
US20050146348A1 (en) 2005-07-07
EP1550876B1 (de) 2009-07-15
TW200523558A (en) 2005-07-16

Similar Documents

Publication Publication Date Title
DE602004011785D1 (de) Verfahren und vorrichtung zur messung der reifengleichförmigkeit
DE502004004343D1 (de) Verfahren und Vorrichtung zur Abstandsmessung
DE60324066D1 (de) Vorrichtung und Verfahren zur Messung der Hautimpedanz in kleinen Hautbereichen
DE602005009344D1 (de) Verfahren und vorrichtung zur übertragung von leitenden teilen bei der herstellung von halbleiterbauelementen
DE50109562D1 (de) Vorrichtung und verfahren zur winkelmessung
DE60141150D1 (de) Vorrichtung zur untersuchung der wafer-oberfläche und verfahren zur untersuchung der wafer-oberfläche
DE602004006790D1 (de) Verfahren und Gerät zur Klassifikation von Defekten
DE602005006860D1 (de) Verfahren und Vorrichtung zum Messen von Teilentladungen
DE60221158D1 (de) Vorrichtung und verfahren für oberflächeneigenschaften
DE602006003242D1 (de) Vorrichtung und Verfahren zur Messung von thermischen Eigenschaften im Bohrloch
DE60128556D1 (de) Gerät und Verfahren zur Strommessung
DE60326141D1 (de) Verfahren und vorrichtung zur zellenverkapselung
DE602004018278D1 (de) Vorrichtung und verfahren zur schnellen detektion
DE60124647D1 (de) Vorrichtung und Verfahren zur Abstandsmessung
DE60129691D1 (de) Verfahren und vorrichtung zur messung der fluoreszenz
DE602004016422D1 (de) Verfahren und Vorrichtung zur Prüfung von Halbleiterelementen
DE10196012T1 (de) Verfahren und Vorrichtung zur Viskositätsmessung
DE50312666D1 (de) Vorrichtung und verfahren zur distanzmessung
DE60304078D1 (de) Verfahren und Vorrichtung zur Durchfürung von Interfrequenz-Messungen
DE502005005273D1 (de) Verfahren und Vorrichtung zur wechselseitigen Kontaktierung von zwei Wafern
DE60219502D1 (de) Gerät und verfahren zur eichung und validierung von hochleistungs-stromversorgungen für testgeräte
DE502004006790D1 (de) Verfahren und vorrichtung zur spannungsmessung
DE60117667D1 (de) Vorrichtung und Verfahren zur Messung der spektralen Reflexion
DE60324639D1 (de) Vorrichtung und Verfahren zur Messung der Wellenlängenänderung in hochauflösenden Messsystemen
DE60204383D1 (de) Vorrichtung und Verfahren zur Reifenherstellung und zur On-Line-Messung derer elektrischen Leitfähigkeit

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee