DE60142998D1 - Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen - Google Patents

Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen

Info

Publication number
DE60142998D1
DE60142998D1 DE60142998T DE60142998T DE60142998D1 DE 60142998 D1 DE60142998 D1 DE 60142998D1 DE 60142998 T DE60142998 T DE 60142998T DE 60142998 T DE60142998 T DE 60142998T DE 60142998 D1 DE60142998 D1 DE 60142998D1
Authority
DE
Germany
Prior art keywords
quantum dot
dot structures
producing quantum
producing
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142998T
Other languages
English (en)
Inventor
Nobuyasu Suzuki
Toshiharu Makino
Yuka Yamada
Takehito Yoshida
Takafumi Seto
Nobuhiro Aya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DIRECTOR GENERAL OF NAT INST O
Panasonic Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
DIRECTOR GENERAL OF NAT INST O
Panasonic Corp
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000091902A external-priority patent/JP4280809B2/ja
Priority claimed from JP2000197367A external-priority patent/JP3697499B2/ja
Application filed by DIRECTOR GENERAL OF NAT INST O, Panasonic Corp, National Institute of Advanced Industrial Science and Technology AIST filed Critical DIRECTOR GENERAL OF NAT INST O
Application granted granted Critical
Publication of DE60142998D1 publication Critical patent/DE60142998D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/12—Making metallic powder or suspensions thereof using physical processes starting from gaseous material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE60142998T 2000-03-29 2001-02-16 Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen Expired - Lifetime DE60142998D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000091902A JP4280809B2 (ja) 2000-03-29 2000-03-29 超微粒子分級装置
JP2000197367A JP3697499B2 (ja) 2000-06-29 2000-06-29 量子ドット型機能構造体作製装置

Publications (1)

Publication Number Publication Date
DE60142998D1 true DE60142998D1 (de) 2010-10-21

Family

ID=26588756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142998T Expired - Lifetime DE60142998D1 (de) 2000-03-29 2001-02-16 Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen

Country Status (4)

Country Link
US (2) US6648975B2 (de)
EP (1) EP1139438B1 (de)
KR (1) KR100393128B1 (de)
DE (1) DE60142998D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3349965B2 (ja) * 1998-11-05 2002-11-25 松下電器産業株式会社 微粒子分級方法及び装置
JP3559962B2 (ja) * 2000-09-04 2004-09-02 日本航空電子工業株式会社 熱電変換材料及びその製造方法
KR100486607B1 (ko) * 2002-09-17 2005-05-03 주식회사 하이닉스반도체 양자점 형성 방법
CN1747895A (zh) * 2003-02-10 2006-03-15 日本电气株式会社 纳米碳制造装置和纳米碳制造方法
WO2004113225A1 (ja) * 2003-06-24 2004-12-29 Nec Corporation ナノカーボンの製造装置
CN1826287A (zh) * 2003-08-08 2006-08-30 日本电气株式会社 纳米碳制造装置、制造方法和用于收集纳米碳的方法
US7662731B2 (en) * 2004-03-12 2010-02-16 Japan Science And Technology Agency Quantum dot manipulating method and quantum dot production/manipulation apparatus
KR100707172B1 (ko) * 2004-09-04 2007-04-13 삼성전자주식회사 레이저 어블레이션 장치 및 이를 이용한 나노입자의제조방법
US7886623B2 (en) * 2006-09-25 2011-02-15 National Health Research Institutes Nano-particle containing apparatus, nano-particle detection system and method thereof
DE102009021056A1 (de) * 2008-10-30 2010-05-12 BAM Bundesanstalt für Materialforschung und -prüfung Verfahren und Vorrichtung zum Aufbringen oder Einbetten von Partikeln auf oder in eine durch Plasmabeschichtung aufgebrachte Schicht
JP5652851B2 (ja) 2010-02-02 2015-01-14 独立行政法人理化学研究所 微分型電気移動度分級装置、粒子計測システム、及び粒子選別システム
US9849512B2 (en) 2011-07-01 2017-12-26 Attostat, Inc. Method and apparatus for production of uniformly sized nanoparticles
US9915726B2 (en) 2012-03-16 2018-03-13 Continental Advanced Lidar Solutions Us, Llc Personal LADAR sensor
US8804101B2 (en) 2012-03-16 2014-08-12 Advanced Scientific Concepts, Inc. Personal LADAR sensor
US9419174B2 (en) 2012-09-26 2016-08-16 University Of Florida Research Foundation, Inc. Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
US9885001B2 (en) 2014-09-23 2018-02-06 Attostat, Inc. Fuel additive composition and related methods
US10190253B2 (en) 2014-09-23 2019-01-29 Attostat, Inc Nanoparticle treated fabrics, fibers, filaments, and yarns and related methods
US9883670B2 (en) 2014-09-23 2018-02-06 Attostat, Inc. Compositions and methods for treating plant diseases
US9919363B2 (en) 2014-09-23 2018-03-20 Attostat, Inc. System and method for making non-spherical nanoparticles and nanoparticle compositions made thereby
US9839652B2 (en) 2015-04-01 2017-12-12 Attostat, Inc. Nanoparticle compositions and methods for treating or preventing tissue infections and diseases
CN107614629A (zh) 2015-04-13 2018-01-19 阿托斯塔特公司 抗腐蚀纳米颗粒组合物
US11473202B2 (en) 2015-04-13 2022-10-18 Attostat, Inc. Anti-corrosion nanoparticle compositions
CN107850554B (zh) * 2015-08-26 2021-09-07 伊雷克托科学工业股份有限公司 相对于气流的镭射扫描定序及方向
US10201571B2 (en) 2016-01-25 2019-02-12 Attostat, Inc. Nanoparticle compositions and methods for treating onychomychosis
US11646453B2 (en) 2017-11-28 2023-05-09 Attostat, Inc. Nanoparticle compositions and methods for enhancing lead-acid batteries
US11018376B2 (en) 2017-11-28 2021-05-25 Attostat, Inc. Nanoparticle compositions and methods for enhancing lead-acid batteries

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH649231A5 (de) * 1980-10-28 1985-05-15 Hans Christoph Siegmann Prof D Verfahren zum elektrischen aufladen von schwebeteilchen in gasen.
DE4118152A1 (de) 1991-06-03 1992-12-10 Philips Patentverwaltung Verfahren zur schmalbandigen groessenselektion ultrafeiner partikel
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
DE4305704B4 (de) * 1993-02-25 2006-02-16 Matter + Siegmann Ag Verfahren und Vorrichtung zur Untersuchung von in einem Gas befindlichen Partikeln
FR2720506B1 (fr) 1994-05-24 1996-07-05 Commissariat Energie Atomique Spectromètre de particules submicroniques.
FR2720505B1 (fr) 1994-05-24 1996-07-05 Commissariat Energie Atomique Sélecteur de particules chargées, à haute sensibilité.
JP3196644B2 (ja) 1995-06-26 2001-08-06 松下電器産業株式会社 光電子材料の製造方法、並びにその光電子材料を用いた応用素子及び応用装置
FR2745084B1 (fr) * 1996-02-15 1998-03-13 Commissariat Energie Atomique Selecteur de mobilite dynamique des particules d'un aerosol
AU709692B2 (en) * 1996-06-19 1999-09-02 Matsushita Electric Industrial Co., Ltd. Optoelectronic material, device using the same, and method for manufacturing optoelectronic material
JP3349965B2 (ja) 1998-11-05 2002-11-25 松下電器産業株式会社 微粒子分級方法及び装置

Also Published As

Publication number Publication date
EP1139438A2 (de) 2001-10-04
KR100393128B1 (ko) 2003-07-31
US20040045341A1 (en) 2004-03-11
EP1139438B1 (de) 2010-09-08
EP1139438A3 (de) 2004-08-25
US6648975B2 (en) 2003-11-18
US7384666B2 (en) 2008-06-10
KR20010103569A (ko) 2001-11-23
US20010031564A1 (en) 2001-10-18

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