DE60142943D1 - Schnellentladungsstruktur für Vollbildsensor mit lateraler Overflow-Drain Antiblooming-Struktur - Google Patents

Schnellentladungsstruktur für Vollbildsensor mit lateraler Overflow-Drain Antiblooming-Struktur

Info

Publication number
DE60142943D1
DE60142943D1 DE60142943T DE60142943T DE60142943D1 DE 60142943 D1 DE60142943 D1 DE 60142943D1 DE 60142943 T DE60142943 T DE 60142943T DE 60142943 T DE60142943 T DE 60142943T DE 60142943 D1 DE60142943 D1 DE 60142943D1
Authority
DE
Germany
Prior art keywords
drain
image sensor
full image
antiblooming
fast discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142943T
Other languages
German (de)
English (en)
Inventor
Eric Gordon Stevens
William F Desjardin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60142943D1 publication Critical patent/DE60142943D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536—Frame transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
DE60142943T 2000-03-22 2001-03-12 Schnellentladungsstruktur für Vollbildsensor mit lateraler Overflow-Drain Antiblooming-Struktur Expired - Lifetime DE60142943D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/533,051 US6693671B1 (en) 2000-03-22 2000-03-22 Fast-dump structure for full-frame image sensors with lod antiblooming structures

Publications (1)

Publication Number Publication Date
DE60142943D1 true DE60142943D1 (de) 2010-10-14

Family

ID=24124256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142943T Expired - Lifetime DE60142943D1 (de) 2000-03-22 2001-03-12 Schnellentladungsstruktur für Vollbildsensor mit lateraler Overflow-Drain Antiblooming-Struktur

Country Status (4)

Country Link
US (1) US6693671B1 (https=)
EP (1) EP1137071B1 (https=)
JP (1) JP4743983B2 (https=)
DE (1) DE60142943D1 (https=)

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JP2001238134A (ja) * 2000-02-23 2001-08-31 Sony Corp 固体撮像素子およびその駆動方法並びにカメラシステム
US6995795B1 (en) 2000-09-12 2006-02-07 Eastman Kodak Company Method for reducing dark current
US20050068441A1 (en) * 2003-09-26 2005-03-31 Eastman Kodak Company Multiple output CCD for color imaging
US7492404B2 (en) * 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors
US20080007622A1 (en) * 2006-06-08 2008-01-10 Eastman Kodak Company Method of improving solid-state image sensor sensitivity
JP2009177018A (ja) * 2008-01-25 2009-08-06 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US8134630B2 (en) * 2008-05-09 2012-03-13 Truesense Imaging, Inc. System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains
US8772891B2 (en) 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US9049353B2 (en) 2011-09-28 2015-06-02 Semiconductor Components Industries, Llc Time-delay-and-integrate image sensors having variable integration times
CN105611197B (zh) * 2015-12-23 2018-08-17 中国科学院长春光学精密机械与物理研究所 无抗溢出功能帧转移ccd的抗饱和读出方法
JP7765306B2 (ja) * 2022-02-24 2025-11-06 浜松ホトニクス株式会社 固体撮像素子

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JPS5817788A (ja) * 1981-07-23 1983-02-02 Toshiba Corp 固体撮像装置
US4528596A (en) * 1982-11-30 1985-07-09 Rca Corporation Suppression of edge effects arising in CCD imager field registers
US4611140A (en) 1985-08-26 1986-09-09 The United States Of America As Represented By The Secretary Of The Navy Saw-CTD parallel to serial imager
US4908684A (en) * 1986-07-07 1990-03-13 Hitachi, Ltd. Solid-state imaging device
US4972254A (en) * 1987-02-24 1990-11-20 Kabushiki Kaisha Toshiba Solid state image sensors for reproducing high definition images
US5121214A (en) 1990-06-29 1992-06-09 The United States Of America As Represented By The United States Department Of Energy Method for eliminating artifacts in CCD imagers
US5130774A (en) * 1990-07-12 1992-07-14 Eastman Kodak Company Antiblooming structure for solid-state image sensor
WO1992021151A2 (en) 1991-05-10 1992-11-26 Q-Dot, Inc. HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT
US5355165A (en) 1992-08-06 1994-10-11 Princeton Scientific Instruments, Inc. Very high frame rate CCD imager
US5343297A (en) 1992-09-17 1994-08-30 General Electric Company Charge amplifier with precise, integer gain
US5440343A (en) 1994-02-28 1995-08-08 Eastman Kodak Company Motion/still electronic image sensing apparatus
US5668597A (en) 1994-12-30 1997-09-16 Eastman Kodak Company Electronic camera with rapid automatic focus of an image upon a progressive scan image sensor
EP0756759B1 (en) * 1995-02-21 2004-04-14 Dalsa Corporation Charge-coupled imaging device
JP3590944B2 (ja) * 1996-02-23 2004-11-17 日本テキサス・インスツルメンツ株式会社 電荷結合型半導体装置
JP3750221B2 (ja) * 1996-10-01 2006-03-01 ソニー株式会社 固体撮像装置
JP2894323B2 (ja) * 1997-06-23 1999-05-24 日本電気株式会社 固体撮像装置およびその製造方法
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2000134540A (ja) * 1998-10-29 2000-05-12 Nec Corp 固体撮像装置及びその駆動方法

Also Published As

Publication number Publication date
EP1137071A3 (en) 2005-09-14
EP1137071B1 (en) 2010-09-01
US6693671B1 (en) 2004-02-17
JP2001326344A (ja) 2001-11-22
EP1137071A2 (en) 2001-09-26
JP4743983B2 (ja) 2011-08-10

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