DE60141744D1 - - Google Patents

Info

Publication number
DE60141744D1
DE60141744D1 DE60141744T DE60141744T DE60141744D1 DE 60141744 D1 DE60141744 D1 DE 60141744D1 DE 60141744 T DE60141744 T DE 60141744T DE 60141744 T DE60141744 T DE 60141744T DE 60141744 D1 DE60141744 D1 DE 60141744D1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141744T
Inventor
Steve Berger
Lawrence Scipioni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Application granted granted Critical
Publication of DE60141744D1 publication Critical patent/DE60141744D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
DE60141744T 2000-02-25 2001-02-14 Expired - Lifetime DE60141744D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/513,826 US6727500B1 (en) 2000-02-25 2000-02-25 System for imaging a cross-section of a substrate
PCT/US2001/040108 WO2001063266A2 (en) 2000-02-25 2001-02-14 System for imaging a cross-section of a substrate

Publications (1)

Publication Number Publication Date
DE60141744D1 true DE60141744D1 (de) 2010-05-20

Family

ID=24044803

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141744T Expired - Lifetime DE60141744D1 (de) 2000-02-25 2001-02-14

Country Status (6)

Country Link
US (2) US6727500B1 (de)
EP (1) EP1266392B1 (de)
JP (1) JP4932117B2 (de)
DE (1) DE60141744D1 (de)
TW (1) TWI220533B (de)
WO (1) WO2001063266A2 (de)

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FR2806527B1 (fr) 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US6977386B2 (en) * 2001-01-19 2005-12-20 Fei Company Angular aperture shaped beam system and method
JP2003302743A (ja) * 2002-04-12 2003-10-24 Dainippon Printing Co Ltd フォトマスクの検査方法
EP1501115B1 (de) 2003-07-14 2009-07-01 FEI Company Zweistrahlsystem
US7786451B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7786452B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US20050211896A1 (en) * 2004-03-23 2005-09-29 International Business Machines Corporation Pt coating initiated by indirect electron beam for resist contact hole metrology
US7459377B2 (en) * 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7315367B2 (en) * 2004-06-17 2008-01-01 International Business Machines Corporation Defining a pattern on a substrate
JP2006079846A (ja) * 2004-09-07 2006-03-23 Canon Inc 試料の断面評価装置及び試料の断面評価方法
US7176681B2 (en) * 2005-03-08 2007-02-13 Siemens Power Generation, Inc. Inspection of composite components using magnetic resonance imaging
JP2006252995A (ja) * 2005-03-11 2006-09-21 Jeol Ltd 荷電粒子ビーム装置
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US20110163068A1 (en) * 2008-01-09 2011-07-07 Mark Utlaut Multibeam System
US8907277B2 (en) * 2008-03-07 2014-12-09 Carl Zeiss Microscopy, Llc Reducing particle implantation
US8384029B2 (en) 2008-06-20 2013-02-26 Carl Zeiss Nts, Llc Cross-section systems and methods
EP2228817B1 (de) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Allgemeine Punktverbreitungsfunktion bei Mehrstrahlenmusterung
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
EP3528276A3 (de) * 2011-05-13 2019-09-04 Fibics Incorporated Mikroskopiebildgebungsverfahren
US8563966B2 (en) * 2011-12-30 2013-10-22 Khalifa University of Science, Technology & Research (KUSTAR) Nano metal particles based tunneling field effect transistor and nano-switch
US9696372B2 (en) * 2012-10-05 2017-07-04 Fei Company Multidimensional structural access
US10617401B2 (en) 2014-11-14 2020-04-14 Ziteo, Inc. Systems for localization of targets inside a body

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US4634871A (en) 1985-01-14 1987-01-06 Hughes Aircraft Company Method and apparatus for spot shaping and blanking a focused beam
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JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
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US5093572A (en) * 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
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JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
US5345850A (en) * 1993-08-09 1994-09-13 S-B Power Tool Company Belt tensioning device for band saws
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
AU2914095A (en) 1994-06-28 1996-01-25 Fei Company Charged particle deposition of electrically insulating films
US5587568A (en) * 1995-05-19 1996-12-24 Itt Corporation Interlock switch
JP3531323B2 (ja) * 1995-12-06 2004-05-31 株式会社日立製作所 イオンビーム加工方法および装置
US5825038A (en) * 1996-11-26 1998-10-20 Eaton Corporation Large area uniform ion beam formation
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置
JP2944559B2 (ja) * 1997-03-18 1999-09-06 株式会社東芝 ビーム電流測定用貫通孔の製造方法
EP0927880A4 (de) * 1997-07-22 2010-11-17 Hitachi Ltd Vorrichtung und verfahren zur probenvorbereitung
US5945677A (en) 1998-04-10 1999-08-31 The Regents Of The University Of California Focused ion beam system
US6011269A (en) 1998-04-10 2000-01-04 Etec Systems, Inc. Shaped shadow projection for an electron beam column
US6455863B1 (en) 1999-06-09 2002-09-24 Applied Materials, Inc. Apparatus and method for forming a charged particle beam of arbitrary shape
AU2002357037A1 (en) * 2001-11-30 2003-06-17 The Trustees Of Boston College Coated carbon nanotube array electrodes

Also Published As

Publication number Publication date
US6838668B2 (en) 2005-01-04
JP2003524182A (ja) 2003-08-12
EP1266392B1 (de) 2010-04-07
WO2001063266A2 (en) 2001-08-30
TWI220533B (en) 2004-08-21
US6727500B1 (en) 2004-04-27
US20040065826A1 (en) 2004-04-08
JP4932117B2 (ja) 2012-05-16
WO2001063266A3 (en) 2002-04-18
EP1266392A2 (de) 2002-12-18

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Legal Events

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8364 No opposition during term of opposition