DE60141611D1 - Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist - Google Patents

Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist

Info

Publication number
DE60141611D1
DE60141611D1 DE60141611T DE60141611T DE60141611D1 DE 60141611 D1 DE60141611 D1 DE 60141611D1 DE 60141611 T DE60141611 T DE 60141611T DE 60141611 T DE60141611 T DE 60141611T DE 60141611 D1 DE60141611 D1 DE 60141611D1
Authority
DE
Germany
Prior art keywords
oxidation
nitrogen
substantially free
doped silicon
induced stacking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141611T
Other languages
English (en)
Inventor
Hiroyo Haga
Mohsen Banan
Takaaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000283033A external-priority patent/JP2002093814A/ja
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE60141611D1 publication Critical patent/DE60141611D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60141611T 2000-09-19 2001-08-30 Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist Expired - Lifetime DE60141611D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000283033A JP2002093814A (ja) 2000-09-19 2000-09-19 シリコンエピタキシャルウェーハの基板単結晶およびその製造方法
US30852101P 2001-07-27 2001-07-27

Publications (1)

Publication Number Publication Date
DE60141611D1 true DE60141611D1 (de) 2010-04-29

Family

ID=26600186

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60141611T Expired - Lifetime DE60141611D1 (de) 2000-09-19 2001-08-30 Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
DE60115078T Expired - Lifetime DE60115078T2 (de) 2000-09-19 2001-08-30 Mit stickstoff dotiertes silizium das wesentlich frei von oxidationsinduzierten stapelfehlern ist

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60115078T Expired - Lifetime DE60115078T2 (de) 2000-09-19 2001-08-30 Mit stickstoff dotiertes silizium das wesentlich frei von oxidationsinduzierten stapelfehlern ist

Country Status (7)

Country Link
US (2) US7182809B2 (de)
EP (1) EP1325178B1 (de)
KR (3) KR100917087B1 (de)
CN (1) CN1260405C (de)
DE (2) DE60141611D1 (de)
TW (1) TW593799B (de)
WO (1) WO2002024986A2 (de)

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JP4824926B2 (ja) * 2004-12-24 2011-11-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェハの製造方法
JP5188673B2 (ja) * 2005-06-09 2013-04-24 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4760729B2 (ja) * 2006-02-21 2011-08-31 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
US8021484B2 (en) 2006-03-30 2011-09-20 Sumco Techxiv Corporation Method of manufacturing epitaxial silicon wafer and apparatus therefor
JP4827587B2 (ja) * 2006-03-31 2011-11-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
WO2009148779A2 (en) 2008-05-29 2009-12-10 The Board Of Trustees Of The University Of Illinois Heavily doped metal oxides and methods for making the same
JP2009292663A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶の育成方法
JP2009292662A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶育成における肩形成方法
EP2412849B1 (de) * 2009-03-25 2016-03-23 SUMCO Corporation Siliciumwafer und herstellungsverfahren dafür
KR20110029325A (ko) * 2009-09-15 2011-03-23 주식회사 엘지실트론 Ｅｐｉ 웨이퍼 및 ｅｐｉ 웨이퍼용 실리콘 단결정 잉곳과 그 제조방법
KR101244352B1 (ko) * 2010-01-29 2013-03-18 가부시키가이샤 사무코 실리콘 웨이퍼, 에피택셜 웨이퍼 및 고체촬상소자의 제조방법, 그리고 실리콘 웨이퍼의 제조장치
DE102010007460B4 (de) * 2010-02-10 2013-11-28 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall
CN101845666B (zh) * 2010-06-03 2013-08-28 王敬 一种掺氮晶体硅及其制备方法
CN101864593B (zh) * 2010-06-03 2012-11-07 王敬 掺氮晶体硅及其制备方法
US9051659B2 (en) * 2010-09-03 2015-06-09 Gtat Ip Holding Silicon single crystal doped with gallium, indium, or aluminum
KR101304155B1 (ko) * 2010-09-06 2013-09-04 주식회사 엘지실트론 단결정 잉곳 제조방법 및 실리콘 단결정 잉곳
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
JP6478225B2 (ja) * 2013-03-07 2019-03-06 国立大学法人大阪大学 化合物半導体薄膜の製造方法及び製造装置
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
JP6652959B2 (ja) 2014-07-31 2020-02-26 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 窒素ドープされた空孔優勢であるシリコンインゴット、およびそれから形成された半径方向に均一に分布した酸素析出の密度およびサイズを有する熱処理されたウエハ
US10600076B2 (en) * 2014-08-14 2020-03-24 Google Llc Systems and methods for obfuscated audience measurement
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP6565624B2 (ja) * 2015-11-16 2019-08-28 株式会社Sumco シリコンウェーハの品質評価方法およびシリコンウェーハの製造方法
CN105887188A (zh) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 单晶硅生长方法
US11028499B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
US11028500B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
CN113818077A (zh) * 2021-09-23 2021-12-21 西安奕斯伟材料科技有限公司 氮掺杂硅熔体获取设备、方法及氮掺杂单晶硅制造系统
CN115404539A (zh) * 2022-08-30 2022-11-29 西安奕斯伟材料科技有限公司 直拉法拉制单晶硅棒的方法、单晶硅棒、硅片及外延硅片

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DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
MY127594A (en) * 1997-04-09 2006-12-29 Memc Electronic Materials Low defect density, vacancy dominated silicon
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
DE19823962A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
JP3994602B2 (ja) * 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
DE60141611D1 (de) 2000-09-19 2010-04-29 Memc Electronic Materials Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
JP4463957B2 (ja) * 2000-09-20 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
JP2002317385A (ja) 2001-04-23 2002-10-31 Fujikura Rubber Ltd ラテックス袋状体およびその製造方法
US7147411B2 (en) * 2002-11-11 2006-12-12 Ford Global Technologies, Llc Gundrill

Also Published As

Publication number Publication date
DE60115078T2 (de) 2006-07-27
US7182809B2 (en) 2007-02-27
CN1461360A (zh) 2003-12-10
KR20070047376A (ko) 2007-05-04
WO2002024986A2 (en) 2002-03-28
TW593799B (en) 2004-06-21
KR20030046459A (ko) 2003-06-12
KR100816207B1 (ko) 2008-03-21
US7404856B2 (en) 2008-07-29
EP1325178A2 (de) 2003-07-09
KR100917087B1 (ko) 2009-09-15
CN1260405C (zh) 2006-06-21
WO2002024986A3 (en) 2002-06-06
US20070169683A1 (en) 2007-07-26
DE60115078D1 (de) 2005-12-22
EP1325178B1 (de) 2005-11-16
KR20070008724A (ko) 2007-01-17
US20040009111A1 (en) 2004-01-15

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