DE60131707D1 - Fingerabdruck-Lesegerät mit Entladungsschutz - Google Patents

Fingerabdruck-Lesegerät mit Entladungsschutz

Info

Publication number
DE60131707D1
DE60131707D1 DE60131707T DE60131707T DE60131707D1 DE 60131707 D1 DE60131707 D1 DE 60131707D1 DE 60131707 T DE60131707 T DE 60131707T DE 60131707 T DE60131707 T DE 60131707T DE 60131707 D1 DE60131707 D1 DE 60131707D1
Authority
DE
Germany
Prior art keywords
discharge protection
fingerprint reader
fingerprint
reader
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60131707T
Other languages
English (en)
Other versions
DE60131707T2 (de
Inventor
Tomomi Iihama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000235555A external-priority patent/JP3569804B2/ja
Priority claimed from JP2000277518A external-priority patent/JP3528047B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE60131707D1 publication Critical patent/DE60131707D1/de
Publication of DE60131707T2 publication Critical patent/DE60131707T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V30/00—Character recognition; Recognising digital ink; Document-oriented image-based pattern recognition
    • G06V30/10—Character recognition
    • G06V30/14—Image acquisition
    • G06V30/144—Image acquisition using a slot moved over the image; using discrete sensing elements at predetermined points; using automatic curve following means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Facsimile Scanning Arrangements (AREA)
DE60131707T 2000-08-03 2001-08-01 Fingerabdruck-Lesegerät mit Entladungsschutz Expired - Lifetime DE60131707T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000235555A JP3569804B2 (ja) 2000-08-03 2000-08-03 ２次元画像読取装置
JP2000235555 2000-08-03
JP2000277518 2000-09-13
JP2000277518A JP3528047B2 (ja) 2000-09-13 2000-09-13 ２次元画像読取装置

Publications (2)

Publication Number Publication Date
DE60131707D1 true DE60131707D1 (de) 2008-01-17
DE60131707T2 DE60131707T2 (de) 2008-04-10

Family

ID=26597285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60131707T Expired - Lifetime DE60131707T2 (de) 2000-08-03 2001-08-01 Fingerabdruck-Lesegerät mit Entladungsschutz

Country Status (7)

Country Link
US (1) US6681992B2 (de)
EP (1) EP1178536B1 (de)
KR (1) KR100441655B1 (de)
CN (1) CN1168146C (de)
DE (1) DE60131707T2 (de)
HK (1) HK1043249B (de)
TW (1) TWI248035B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI289926B (en) * 2002-07-31 2007-11-11 Casio Computer Co Ltd Image reading apparatus and its driving method
US20060014151A1 (en) * 2002-12-25 2006-01-19 Jun Ogura Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor
JP4314843B2 (ja) * 2003-03-05 2009-08-19 カシオ計算機株式会社 画像読取装置及び個人認証システム
JP4556103B2 (ja) * 2004-02-24 2010-10-06 ソニー株式会社 暗号化装置及び暗号化方法
DE602005022900D1 (de) 2004-10-04 2010-09-23 Validity Sensors Inc Fingerabdruckerfassende konstruktionen mit einem substrat
KR100785019B1 (ko) * 2006-06-09 2007-12-11 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
JP4980665B2 (ja) * 2006-07-10 2012-07-18 ルネサスエレクトロニクス株式会社 固体撮像装置
GB2457410B (en) * 2007-06-22 2012-01-04 Panasonic Corp Plasma display panel driving device and plasma display
EP2209021B1 (de) * 2007-10-23 2011-12-14 Shimadzu Corporation Licht- oder strahlungsdetektor und verfahren zu seiner herstellung
US8116540B2 (en) 2008-04-04 2012-02-14 Validity Sensors, Inc. Apparatus and method for reducing noise in fingerprint sensing circuits
DE112009001794T5 (de) 2008-07-22 2012-01-26 Validity Sensors, Inc. System, Vorrichtung und Verfahren zum Sichern einer Vorrichtungskomponente
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012510641A (ja) * 2008-12-01 2012-05-10 ライフ イメージ インク． 医用画像ビューア
TWI496680B (zh) * 2009-01-13 2015-08-21 Sumitomo Electric Industries 鎂合金構件
US8600122B2 (en) 2009-01-15 2013-12-03 Validity Sensors, Inc. Apparatus and method for culling substantially redundant data in fingerprint sensing circuits
JP4780204B2 (ja) * 2009-02-23 2011-09-28 カシオ計算機株式会社 圧力センサ及び圧力センサの圧力測定方法
CN104795323B (zh) * 2009-12-04 2017-12-29 株式会社半导体能源研究所 半导体装置及其制造方法
US8716613B2 (en) 2010-03-02 2014-05-06 Synaptics Incoporated Apparatus and method for electrostatic discharge protection
US9001040B2 (en) 2010-06-02 2015-04-07 Synaptics Incorporated Integrated fingerprint sensor and navigation device
US8538097B2 (en) 2011-01-26 2013-09-17 Validity Sensors, Inc. User input utilizing dual line scanner apparatus and method
US9189675B2 (en) * 2011-04-28 2015-11-17 Moon J. Kim Adaptive fingerprint scanning
US8699762B2 (en) * 2011-05-13 2014-04-15 Moon J. Kim Multi-sided card having a resistive fingerprint imaging array
US8675928B2 (en) 2011-06-14 2014-03-18 Moon J. Kim Multiple charge-coupled biometric sensor array
WO2013130038A1 (en) * 2012-02-28 2013-09-06 Carestream Health, Inc. Radiographic detector arrays including scintillators and methods for same
CN103268876B (zh) * 2012-09-27 2016-03-30 厦门天马微电子有限公司 静电释放保护电路、显示面板和显示装置
KR102258374B1 (ko) * 2013-10-18 2021-06-01 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시 패널 및 이의 제조 방법
CN107003165B (zh) * 2014-11-28 2021-03-09 日立汽车系统株式会社 热式流量传感器
CN109244089B (zh) * 2017-07-10 2021-08-17 京东方科技集团股份有限公司 一种感测基板及其制作方法、显示装置
CN111584655B (zh) * 2020-05-20 2021-02-19 魔童智能科技(扬州)有限公司 一种改善欧姆接触的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786767A (en) * 1987-06-01 1988-11-22 Southwall Technologies Inc. Transparent touch panel switch
US4827084A (en) * 1987-11-19 1989-05-02 Ovonic Imaging Systems, Inc. Solid state image detector and signal generator
AU1258392A (en) * 1991-01-17 1992-08-27 Rgb Dynamics Capacitive touch screen
JPH05218055A (ja) 1992-02-04 1993-08-27 Toshiba Corp 半導体装置
US6114862A (en) * 1996-02-14 2000-09-05 Stmicroelectronics, Inc. Capacitive distance sensor
US5920640A (en) * 1997-05-16 1999-07-06 Harris Corporation Fingerprint sensor and token reader and associated methods
US6091082A (en) * 1998-02-17 2000-07-18 Stmicroelectronics, Inc. Electrostatic discharge protection for integrated circuit sensor passivation
JP3898330B2 (ja) * 1998-03-12 2007-03-28 カシオ計算機株式会社 読取装置

Also Published As

Publication number Publication date
HK1043249B (zh) 2005-05-27
US20020014530A1 (en) 2002-02-07
KR20020011884A (ko) 2002-02-09
KR100441655B1 (ko) 2004-07-27
HK1043249A1 (en) 2002-09-06
CN1168146C (zh) 2004-09-22
TWI248035B (en) 2006-01-21
EP1178536A2 (de) 2002-02-06
DE60131707T2 (de) 2008-04-10
US6681992B2 (en) 2004-01-27
CN1337746A (zh) 2002-02-27
EP1178536A3 (de) 2005-06-15
EP1178536B1 (de) 2007-12-05

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