DE60127887D1 - Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode - Google Patents

Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode

Info

Publication number
DE60127887D1
DE60127887D1 DE60127887T DE60127887T DE60127887D1 DE 60127887 D1 DE60127887 D1 DE 60127887D1 DE 60127887 T DE60127887 T DE 60127887T DE 60127887 T DE60127887 T DE 60127887T DE 60127887 D1 DE60127887 D1 DE 60127887D1
Authority
DE
Germany
Prior art keywords
photodiode
reducing
leakage current
photosensitive surface
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127887T
Other languages
German (de)
English (en)
Inventor
Thomas Edward Kopley
Dietrich W Vook
Thomas Dungan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60127887D1 publication Critical patent/DE60127887D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
DE60127887T 2000-03-03 2001-01-26 Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode Expired - Lifetime DE60127887D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/517,635 US6350663B1 (en) 2000-03-03 2000-03-03 Method for reducing leakage currents of active area diodes and source/drain diffusions

Publications (1)

Publication Number Publication Date
DE60127887D1 true DE60127887D1 (de) 2007-05-31

Family

ID=24060592

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127887T Expired - Lifetime DE60127887D1 (de) 2000-03-03 2001-01-26 Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode

Country Status (4)

Country Link
US (3) US6350663B1 (https=)
EP (1) EP1130638B1 (https=)
JP (1) JP2001308303A (https=)
DE (1) DE60127887D1 (https=)

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JP2008535548A (ja) 2005-03-21 2008-09-04 アボット ダイアビーティーズ ケア インコーポレイテッド 統合医薬注入／検体モニタリングシステムを提供するための方法及びシステム
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US8560082B2 (en) 2009-01-30 2013-10-15 Abbott Diabetes Care Inc. Computerized determination of insulin pump therapy parameters using real time and retrospective data processing
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JP5487734B2 (ja) * 2009-06-05 2014-05-07 株式会社ニコン 固体撮像素子
DK3936032T3 (da) 2009-07-23 2024-07-29 Abbott Diabetes Care Inc Realtidshåndtering af data relateret til fysiologisk styring af glukoseniveauer
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
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Also Published As

Publication number Publication date
JP2001308303A (ja) 2001-11-02
US6437379B2 (en) 2002-08-20
US6350663B1 (en) 2002-02-26
EP1130638A3 (en) 2003-10-15
US20010023095A1 (en) 2001-09-20
US6417074B2 (en) 2002-07-09
EP1130638B1 (en) 2007-04-18
US20010024864A1 (en) 2001-09-27
EP1130638A2 (en) 2001-09-05

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