DE60121310D1 - Palladiumhydrid-hochtemperatursupraleiter - Google Patents
Palladiumhydrid-hochtemperatursupraleiterInfo
- Publication number
- DE60121310D1 DE60121310D1 DE60121310T DE60121310T DE60121310D1 DE 60121310 D1 DE60121310 D1 DE 60121310D1 DE 60121310 T DE60121310 T DE 60121310T DE 60121310 T DE60121310 T DE 60121310T DE 60121310 D1 DE60121310 D1 DE 60121310D1
- Authority
- DE
- Germany
- Prior art keywords
- sub
- sup
- palladium
- hydride
- palladium hydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18858500P | 2000-03-10 | 2000-03-10 | |
US188585P | 2000-03-10 | ||
PCT/IB2001/000915 WO2001067525A2 (en) | 2000-03-10 | 2001-03-12 | HIGH Tc PALLADIUM HYDRIDE SUPERCONDUCTOR |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60121310D1 true DE60121310D1 (de) | 2006-08-17 |
DE60121310T2 DE60121310T2 (de) | 2007-07-05 |
Family
ID=22693758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60121310T Expired - Lifetime DE60121310T2 (de) | 2000-03-10 | 2001-03-12 | Palladiumhydrid-hochtemperatursupraleiter |
Country Status (7)
Country | Link |
---|---|
US (1) | US7033568B2 (de) |
EP (1) | EP1269550B1 (de) |
AT (1) | ATE332576T1 (de) |
AU (1) | AU7436301A (de) |
DE (1) | DE60121310T2 (de) |
ES (1) | ES2267777T3 (de) |
WO (1) | WO2001067525A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8603405B2 (en) | 2007-03-29 | 2013-12-10 | Npl Associates, Inc. | Power units based on dislocation site techniques |
US8440165B2 (en) * | 2007-03-29 | 2013-05-14 | Npl Associates, Inc. | Dislocation site density techniques |
US8227020B1 (en) | 2007-03-29 | 2012-07-24 | Npl Associates, Inc. | Dislocation site formation techniques |
CN109115764B (zh) * | 2018-07-30 | 2021-06-15 | 深圳瑞达生物股份有限公司 | 环保型尿液羟苯衍生物检测试剂及其制备方法 |
DE202024100204U1 (de) | 2024-01-17 | 2024-03-04 | Rüdiger Schloo | Hochtemperatur - Supraleitung durch Vervielfachung von Grenzflächeneffekten |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4043809A (en) * | 1976-05-24 | 1977-08-23 | Ruvalds John J | High temperature superconductors and method |
US4485152A (en) * | 1982-06-18 | 1984-11-27 | Research Foundation, State University Of New York | Superconducting type II palladium alloy hydride-palladium hydride composites |
-
2001
- 2001-03-12 EP EP01940872A patent/EP1269550B1/de not_active Expired - Lifetime
- 2001-03-12 AT AT01940872T patent/ATE332576T1/de active
- 2001-03-12 WO PCT/IB2001/000915 patent/WO2001067525A2/en active IP Right Grant
- 2001-03-12 DE DE60121310T patent/DE60121310T2/de not_active Expired - Lifetime
- 2001-03-12 US US10/204,971 patent/US7033568B2/en not_active Expired - Fee Related
- 2001-03-12 AU AU74363/01A patent/AU7436301A/en not_active Abandoned
- 2001-03-12 ES ES01940872T patent/ES2267777T3/es not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60121310T2 (de) | 2007-07-05 |
EP1269550B1 (de) | 2006-07-05 |
EP1269550A2 (de) | 2003-01-02 |
AU7436301A (en) | 2001-09-17 |
ES2267777T3 (es) | 2007-03-16 |
US7033568B2 (en) | 2006-04-25 |
US20030144151A1 (en) | 2003-07-31 |
WO2001067525A2 (en) | 2001-09-13 |
ATE332576T1 (de) | 2006-07-15 |
WO2001067525A3 (en) | 2002-10-17 |
WO2001067525A9 (en) | 2002-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6743475B2 (en) | Process for producing aluminum oxide films at low temperatures | |
Shim et al. | Atomic layer deposition of yttria-stabilized zirconia for solid oxide fuel cells | |
Kuech et al. | Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy | |
Okano et al. | Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation | |
US20050112874A1 (en) | Process for producing metal oxide films at low temperatures | |
Jayachandran et al. | Synthesis of porous silicon nanostructures for photoluminescent devices | |
KR890002286A (ko) | 플라즈마 향상된 산화규소 부착방법 및 진공시스템 | |
ATE332575T1 (de) | Herstellungsverfahren einer photoelektrischen dünnschicht-umwandlungsanordnung aus amorphem silizium | |
CA2051554A1 (en) | Thin film deposition method | |
WO2005057630A3 (en) | Manufacturable low-temperature silicon carbide deposition technology | |
KR100760336B1 (ko) | 화학적 기상 반응 방법을 이용하여 흑연의 표면 특성을개질하는 방법 | |
RU99100321A (ru) | Откачивающее устройство, предусматривающее применение неиспаряющегося геттера, и способы применения данного геттера | |
US5395704A (en) | Solid-oxide fuel cells | |
DE60121310D1 (de) | Palladiumhydrid-hochtemperatursupraleiter | |
US20180358182A1 (en) | Method for producing a layer with perovskite material | |
DK94393D0 (da) | Fremgangsmaade til fremstilling af calciumdoteret lanthanchromit | |
Mahnke et al. | Aluminum oxide doped with erbium, titanium and chromium for active integrated optical applications | |
DE10345824A1 (de) | Anordnung zur Abscheidung von atomaren Schichten auf Substraten | |
Frigo et al. | A method for dosing solid sources for MOVPE: excellent reproducibility of dosimetry from a saturated solution of trimethylindium | |
KR20110074052A (ko) | 저주파 peald 장비를 이용한 플라스틱 기판용 배리어 필름 제조방법 | |
WO2003031675A3 (de) | Verfahren zur diamantbeschichtung von substraten | |
Essex et al. | Atomic layer deposition of cerium oxide for potential use in solid oxide fuel cells | |
CN111313069B (zh) | 一种复合质子导电陶瓷电解质薄膜、其制备方法及应用 | |
JPS60157269A (ja) | GaAs太陽電池およびその製造方法 | |
JP2006105624A (ja) | ダイアフラムチップとそれを用いた圧力センサ及びダイアフラムチップの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |