WO2003031675A3 - Verfahren zur diamantbeschichtung von substraten - Google Patents

Verfahren zur diamantbeschichtung von substraten Download PDF

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Publication number
WO2003031675A3
WO2003031675A3 PCT/EP2002/011226 EP0211226W WO03031675A3 WO 2003031675 A3 WO2003031675 A3 WO 2003031675A3 EP 0211226 W EP0211226 W EP 0211226W WO 03031675 A3 WO03031675 A3 WO 03031675A3
Authority
WO
WIPO (PCT)
Prior art keywords
reactive gas
diamond coating
coating substrates
gas mixture
recipient
Prior art date
Application number
PCT/EP2002/011226
Other languages
English (en)
French (fr)
Other versions
WO2003031675A2 (de
Inventor
David Franz
Johann Karner
Original Assignee
Unaxis Balzers Ag
David Franz
Johann Karner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Balzers Ag, David Franz, Johann Karner filed Critical Unaxis Balzers Ag
Priority to US10/491,858 priority Critical patent/US7192483B2/en
Priority to AU2002346963A priority patent/AU2002346963A1/en
Publication of WO2003031675A2 publication Critical patent/WO2003031675A2/de
Publication of WO2003031675A3 publication Critical patent/WO2003031675A3/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Diamantbeschichtung von Substraten, bei dem das Substrat in einer Vakuumatmosphäre einem mittels Plasma-Entladung angeregten reaktiven Gasgemisch ausgesetzt wird, wobei die Plasma-Entladung mindestens einen Plasmastrahl (14) in einem evakuierten Rezipienten (16) umfasst, welcher zwischen einer Kathodenkammer (1) und einer Anode (2) ausgebildet ist, und das reaktive Gasgemisch ein Reaktivgas und ein Arbeitsgas umfasst, wobei das Reaktivgas bei (9) und das Arbeitsgas bei (8) und/oder (9) in den Rezipienten eingedüst werden und der Rezipient (16) über eine Pumpanordnung (15) abgepumpt wird, und wobei die Wasserstoffkonzentration des reaktiven Gasgemisches 0-45 Vol.% beträgt.
PCT/EP2002/011226 2001-10-08 2002-10-07 Verfahren zur diamantbeschichtung von substraten WO2003031675A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/491,858 US7192483B2 (en) 2001-10-08 2002-10-07 Method for diamond coating substrates
AU2002346963A AU2002346963A1 (en) 2001-10-08 2002-10-07 Method for diamond coating substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10149588.9 2001-10-08
DE10149588.9A DE10149588B4 (de) 2001-10-08 2001-10-08 Verfahren zur Diamantbeschichtung von Substraten

Publications (2)

Publication Number Publication Date
WO2003031675A2 WO2003031675A2 (de) 2003-04-17
WO2003031675A3 true WO2003031675A3 (de) 2003-09-12

Family

ID=7701791

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/011226 WO2003031675A2 (de) 2001-10-08 2002-10-07 Verfahren zur diamantbeschichtung von substraten

Country Status (4)

Country Link
US (1) US7192483B2 (de)
AU (1) AU2002346963A1 (de)
DE (1) DE10149588B4 (de)
WO (1) WO2003031675A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT413036B (de) * 2004-06-02 2005-10-15 Boehlerit Gmbh & Co Kg Hartmetallwendeschneidplatte mit diamantschicht
DE102004054193A1 (de) * 2004-11-10 2006-06-01 Thomas Kronenberger Gegen Abrasion und hohe Flächenpressungen beständige Hartstoffbeschichtung auf nachgiebigen Substraten
JP4361916B2 (ja) * 2005-07-05 2009-11-11 神奈川県 金属部材の表面強化方法
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
US20070257265A1 (en) * 2006-05-03 2007-11-08 The University Of Chicago Use of tungsten interlayer to enhance the initial nucleation and conformality of ultrananocrystalline diamond (UNCD) thin films
US7947329B2 (en) * 2006-09-11 2011-05-24 Wisconsin Alumni Research Foundation Methods of applying a nanocrystalline diamond film to a cutting tool
US8496992B2 (en) * 2010-12-10 2013-07-30 Southwest Research Institute Methods of forming nanocomposites containing nanodiamond particles by vapor deposition
EP2832899A1 (de) * 2013-08-02 2015-02-04 The Swatch Group Research and Development Ltd. Diamantbeschichtung und Beschichtungsverfahren zur Aufbringung einer solchen Beschichtung
JP2024506181A (ja) 2021-02-09 2024-02-09 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，プフェフィコーン Ｐｉｃｖｄシステムにおけるアノード過剰成長を抑制するためのアークビーム走査

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2178228A (en) * 1985-07-01 1987-02-04 Balzers Hochvakuum An arrangement for the treating of workpieces
EP0478909A1 (de) * 1990-09-14 1992-04-08 Balzers Aktiengesellschaft Verfahren zur Herstellung einer Diamantschicht und Anlage hierfür
EP0724026A1 (de) * 1995-01-25 1996-07-31 Balzers Aktiengesellschaft Verfahren zur reaktiven Schichtabscheidung

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JPS62133068A (ja) * 1985-12-03 1987-06-16 Toshiba Tungaloy Co Ltd ダイヤモンド被覆部材
US4851254A (en) * 1987-01-13 1989-07-25 Nippon Soken, Inc. Method and device for forming diamond film
JPH02167891A (ja) * 1988-12-20 1990-06-28 Citizen Watch Co Ltd ダイヤモンド膜気相合成装置
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
US5989511A (en) * 1991-11-25 1999-11-23 The University Of Chicago Smooth diamond films as low friction, long wear surfaces
US5772760A (en) * 1991-11-25 1998-06-30 The University Of Chicago Method for the preparation of nanocrystalline diamond thin films
DE4204650C1 (de) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5753045A (en) * 1995-01-25 1998-05-19 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US5762715A (en) * 1995-06-07 1998-06-09 Saint-Gobain/Norton Industrial Ceramics Corporation Segmented substrate for improved ARC-JET diamond deposition
US6173672B1 (en) * 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
CH694699A5 (de) * 1999-04-29 2005-06-15 Balzers Hochvakuum Verfahren zur Herstellung von Silizium.
DE10018143C5 (de) * 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2178228A (en) * 1985-07-01 1987-02-04 Balzers Hochvakuum An arrangement for the treating of workpieces
EP0478909A1 (de) * 1990-09-14 1992-04-08 Balzers Aktiengesellschaft Verfahren zur Herstellung einer Diamantschicht und Anlage hierfür
EP0724026A1 (de) * 1995-01-25 1996-07-31 Balzers Aktiengesellschaft Verfahren zur reaktiven Schichtabscheidung
US5902649A (en) * 1995-01-25 1999-05-11 Balzers Aktiengesellschaft Vacuum treatment system for homogeneous workpiece processing

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAOTO OHTAKE ET AL: "DIAMOND FILM PREPARATION BY ARC DISCHARGE PLASMA JET CHEMICAL VAPOR DEPOSITION IN THE METHANE ATMOSPHERE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 137, no. 2, 1 February 1990 (1990-02-01), pages 717 - 722, XP000213605, ISSN: 0013-4651 *

Also Published As

Publication number Publication date
US20050016444A1 (en) 2005-01-27
AU2002346963A1 (en) 2003-04-22
DE10149588A1 (de) 2003-04-10
US7192483B2 (en) 2007-03-20
WO2003031675A2 (de) 2003-04-17
DE10149588B4 (de) 2017-09-07

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