DE60118024D1 - Selbstreinigendes optisches gerät für die euv-lithographie - Google Patents
Selbstreinigendes optisches gerät für die euv-lithographieInfo
- Publication number
- DE60118024D1 DE60118024D1 DE60118024T DE60118024T DE60118024D1 DE 60118024 D1 DE60118024 D1 DE 60118024D1 DE 60118024 T DE60118024 T DE 60118024T DE 60118024 T DE60118024 T DE 60118024T DE 60118024 D1 DE60118024 D1 DE 60118024D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- optical device
- euv lithography
- cleaning optical
- euv
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title abstract 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B17/00—Methods preventing fouling
- B08B17/02—Preventing deposition of fouling or of dust
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/754,869 US6664554B2 (en) | 2001-01-03 | 2001-01-03 | Self-cleaning optic for extreme ultraviolet lithography |
US754869 | 2001-01-03 | ||
PCT/US2001/044707 WO2002054115A2 (en) | 2001-01-03 | 2001-12-12 | A self-cleaning optic for extreme ultraviolet lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60118024D1 true DE60118024D1 (de) | 2006-05-11 |
DE60118024T2 DE60118024T2 (de) | 2006-11-02 |
Family
ID=25036722
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE0001364231T Pending DE01987139T1 (de) | 2001-01-03 | 2001-12-12 | Selbstreinigendes optisches gerät für die euv-lithographie |
DE60118024T Expired - Lifetime DE60118024T2 (de) | 2001-01-03 | 2001-12-12 | Selbstreinigendes optisches gerät für die euv-lithographie |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE0001364231T Pending DE01987139T1 (de) | 2001-01-03 | 2001-12-12 | Selbstreinigendes optisches gerät für die euv-lithographie |
Country Status (8)
Country | Link |
---|---|
US (1) | US6664554B2 (de) |
EP (1) | EP1364231B1 (de) |
JP (1) | JP4109112B2 (de) |
KR (1) | KR100852985B1 (de) |
AT (1) | ATE320611T1 (de) |
AU (1) | AU2002239385A1 (de) |
DE (2) | DE01987139T1 (de) |
WO (1) | WO2002054115A2 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070281109A1 (en) * | 2000-03-31 | 2007-12-06 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
US7261957B2 (en) * | 2000-03-31 | 2007-08-28 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
US20030064161A1 (en) * | 2001-06-06 | 2003-04-03 | Malinowski Michael E. | Method for reducing carbon contamination of multilayer mirrors |
US20030008148A1 (en) * | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
KR100749897B1 (ko) * | 2001-07-03 | 2007-08-21 | 이유브이 리미티드 라이어빌러티 코포레이션 | 부동태 보호막 이중층 |
US6772776B2 (en) * | 2001-09-18 | 2004-08-10 | Euv Llc | Apparatus for in situ cleaning of carbon contaminated surfaces |
DE10200026A1 (de) | 2002-01-02 | 2003-07-17 | Philips Intellectual Property | Gekühlte Hochdruckgasentladungslampe |
US6759141B2 (en) * | 2002-04-30 | 2004-07-06 | The Regents Of The University Of California | Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers |
US6968850B2 (en) * | 2002-07-15 | 2005-11-29 | Intel Corporation | In-situ cleaning of light source collector optics |
SG111143A1 (en) * | 2002-08-28 | 2005-05-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP3647834B2 (ja) * | 2002-09-25 | 2005-05-18 | 松下電器産業株式会社 | 露光装置用のミラー、露光装置用の反射型マスク、露光装置及びパターン形成方法 |
US7662263B2 (en) * | 2002-09-27 | 2010-02-16 | Euv Llc. | Figure correction of multilayer coated optics |
DE10258709A1 (de) * | 2002-12-12 | 2004-07-01 | Carl Zeiss Smt Ag | Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung |
TWI299505B (en) * | 2003-04-08 | 2008-08-01 | Cymer Inc | Systems and methods for removal of debris on a reflecting surface of an euv collector in an euv light source |
DE10321103A1 (de) * | 2003-05-09 | 2004-12-02 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung |
JP4521696B2 (ja) * | 2003-05-12 | 2010-08-11 | Hoya株式会社 | 反射多層膜付き基板及び反射型マスクブランクス並びに反射型マスク |
WO2004104707A2 (de) * | 2003-05-22 | 2004-12-02 | Philips Intellectual Property & Standards Gmbh | Verfahren und vorrichtung zum reinigen mindestens einer optischen komponente |
EP1652005B1 (de) | 2003-07-29 | 2011-06-22 | Philips Intellectual Property & Standards GmbH | Verfahren und gerät zur oberflächenreinigung von einer optischen vorrichtung |
EP1515188A1 (de) | 2003-09-10 | 2005-03-16 | ASML Netherlands B.V. | Verfahren zum Schutz eines optischen Elements, und optisches Element |
US7740916B2 (en) * | 2004-04-05 | 2010-06-22 | Euv Llc. | Method for the protection of extreme ultraviolet lithography optics |
GB0408543D0 (en) * | 2004-04-16 | 2004-05-19 | Boc Group Plc | Cleaning of multi-layer mirrors |
JP4553239B2 (ja) * | 2004-06-29 | 2010-09-29 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法 |
US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
US7211810B2 (en) * | 2004-12-29 | 2007-05-01 | Asml Netherlands B.V. | Method for the protection of an optical element, lithographic apparatus, and device manufacturing method |
US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
US7141806B1 (en) * | 2005-06-27 | 2006-11-28 | Cymer, Inc. | EUV light source collector erosion mitigation |
US7365349B2 (en) * | 2005-06-27 | 2008-04-29 | Cymer, Inc. | EUV light source collector lifetime improvements |
US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
US7599112B2 (en) * | 2005-10-11 | 2009-10-06 | Nikon Corporation | Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same |
US7948675B2 (en) * | 2005-10-11 | 2011-05-24 | Nikon Corporation | Surface-corrected multilayer-film mirrors with protected reflective surfaces, exposure systems comprising same, and associated methods |
KR101310525B1 (ko) * | 2005-10-11 | 2013-09-23 | 가부시키가이샤 니콘 | 다층막 반사경, 다층막 반사경의 제조 방법, 광학계, 노광장치 및 디바이스의 제조 방법 |
DE102006006283B4 (de) * | 2006-02-10 | 2015-05-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich |
JP5178724B2 (ja) * | 2006-09-04 | 2013-04-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 汚染物質又は望ましくない物質で覆われた表面領域をクリーニングする方法 |
DE102006042987B4 (de) * | 2006-09-13 | 2012-01-19 | Asml Netherlands B.V. | Verfahren zum Betrieb einer EUV-Lithographievorrichtung, reflektives optisches Element für EUV-Lithographievorrichtung und Verfahren zu dessen Reinigung |
US7959310B2 (en) | 2006-09-13 | 2011-06-14 | Carl Zeiss Smt Gmbh | Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element |
DE102006044591A1 (de) * | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
JP5622353B2 (ja) * | 2007-05-07 | 2014-11-12 | 本荘ケミカル株式会社 | 気相中の一酸化炭素を二酸化炭素に光酸化する方法 |
NL1034039C2 (nl) * | 2007-06-26 | 2008-12-30 | Stichting Fund Ond Material | Werkwijze voor het beschermen van een optisch element in een stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied en stralingsbron. |
US7671348B2 (en) * | 2007-06-26 | 2010-03-02 | Advanced Micro Devices, Inc. | Hydrocarbon getter for lithographic exposure tools |
DE102008041628A1 (de) * | 2007-09-14 | 2009-03-19 | Carl Zeiss Smt Ag | Verfahren zur Reinigung von Vakuumkammern und Vakuumkammer |
ATE512389T1 (de) * | 2007-10-23 | 2011-06-15 | Imec | Erkennung von kontaminationen in euv-systemen |
WO2009059614A1 (en) | 2007-11-06 | 2009-05-14 | Carl Zeiss Smt Ag | Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning... |
US8693090B2 (en) | 2008-07-07 | 2014-04-08 | Koninklijke Philips N.V. | Extreme UV radiation reflecting element comprising a sputter-resistant material |
EP2157584A3 (de) * | 2008-08-14 | 2011-07-13 | ASML Netherlands B.V. | Strahlungsquelle, Lithografiegerät und Herstellungsverfahren für ein Bauteil |
JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
DE102009043824A1 (de) * | 2009-08-21 | 2011-02-24 | Asml Netherlands B.V. | Reflektives optisches Element und Verfahren zu dessen Herstellung |
US20130114059A1 (en) * | 2010-07-06 | 2013-05-09 | Asml Netherlands B.V. | Components for EUV Lithographic Apparatus, EUV Lithographic Apparatus Including Such Components and Method for Manufacturing Such Components |
JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
DE102012207369A1 (de) * | 2012-05-03 | 2013-11-07 | Carl Zeiss Laser Optics Gmbh | Optisches Element mit einer Beschichtung und Verfahren zur Überprüfung des optischen Elements |
US9265573B2 (en) | 2012-07-19 | 2016-02-23 | Covidien Lp | Ablation needle including fiber Bragg grating |
US20140158914A1 (en) * | 2012-12-11 | 2014-06-12 | Sandia Corporation | Optical component with blocking surface and method thereof |
WO2014131016A1 (en) * | 2013-02-25 | 2014-08-28 | Kla-Tencor Corporation | Method and system for gas flow mitigation of molecular contamination of optics |
DE102013102670A1 (de) | 2013-03-15 | 2014-10-02 | Asml Netherlands B.V. | Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements |
KR20150044765A (ko) * | 2013-10-17 | 2015-04-27 | 삼성전자주식회사 | 포토마스크 세정 방법 |
US9810991B2 (en) | 2013-12-23 | 2017-11-07 | Kla-Tencor Corporation | System and method for cleaning EUV optical elements |
KR102241758B1 (ko) * | 2014-09-16 | 2021-04-20 | 삼성디스플레이 주식회사 | 패턴 형성 방법 및 이를 이용한 와이어 그리드 편광 소자의 제조방법 |
DE102014114572A1 (de) | 2014-10-08 | 2016-04-14 | Asml Netherlands B.V. | EUV-Lithographiesystem und Betriebsverfahren dafür |
DE102015207140A1 (de) * | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102016208987A1 (de) | 2016-05-24 | 2017-11-30 | Carl Zeiss Smt Gmbh | Optisches Element und EUV-Lithographiesystem |
DE102016213831A1 (de) | 2016-07-27 | 2018-02-01 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102017213181A1 (de) | 2017-07-31 | 2019-01-31 | Carl Zeiss Smt Gmbh | Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas |
DE102017222690A1 (de) | 2017-12-14 | 2018-02-15 | Carl Zeiss Smt Gmbh | Optisches Element mit einem Wasserstoff-Desorptionsmaterial |
KR102402767B1 (ko) * | 2017-12-21 | 2022-05-26 | 삼성전자주식회사 | 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법 |
NL2022644A (en) | 2018-03-05 | 2019-09-10 | Asml Netherlands Bv | Prolonging optical element lifetime in an euv lithography system |
CN109254338A (zh) * | 2018-10-26 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | 一种19.5nm多层膜反射镜 |
DE102018221191A1 (de) * | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung |
DE102020206117A1 (de) | 2020-05-14 | 2021-11-18 | Carl Zeiss Smt Gmbh | Optisches Element, EUV-Lithographiesystem und Verfahren zum Bilden von Nanopartikeln |
EP3933882A1 (de) | 2020-07-01 | 2022-01-05 | Carl Zeiss SMT GmbH | Vorrichtung und verfahren zur atomlagenverarbeitung |
DE102021206168A1 (de) | 2021-06-16 | 2022-12-22 | Carl Zeiss Smt Gmbh | Verfahren zum Abscheiden einer Deckschicht, reflektives optisches Element für den EUV-Wellenlängenbereich und EUV-Lithographiesystem |
DE102021214362A1 (de) | 2021-12-15 | 2023-06-15 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung einer Schutzabdeckung und EUV-Lithographiesystem |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3253675B2 (ja) | 1991-07-04 | 2002-02-04 | 株式会社東芝 | 荷電ビーム照射装置及び方法 |
US5814156A (en) | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
US5958605A (en) | 1997-11-10 | 1999-09-28 | Regents Of The University Of California | Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography |
US5928817A (en) * | 1997-12-22 | 1999-07-27 | Intel Corporation | Method of protecting an EUV mask from damage and contamination |
US6110607A (en) * | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
US6048652A (en) * | 1998-12-04 | 2000-04-11 | Advanced Micro Devices, Inc. | Backside polish EUV mask and method of manufacture |
US6228512B1 (en) * | 1999-05-26 | 2001-05-08 | The Regents Of The University Of California | MoRu/Be multilayers for extreme ultraviolet applications |
TW561279B (en) * | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
JP2001057328A (ja) * | 1999-08-18 | 2001-02-27 | Nikon Corp | 反射マスク、露光装置および集積回路の製造方法 |
TW548524B (en) * | 2000-09-04 | 2003-08-21 | Asm Lithography Bv | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
US6396900B1 (en) * | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
-
2001
- 2001-01-03 US US09/754,869 patent/US6664554B2/en not_active Expired - Lifetime
- 2001-12-12 JP JP2002554754A patent/JP4109112B2/ja not_active Expired - Fee Related
- 2001-12-12 KR KR1020037008958A patent/KR100852985B1/ko active IP Right Grant
- 2001-12-12 AT AT01987139T patent/ATE320611T1/de not_active IP Right Cessation
- 2001-12-12 EP EP01987139A patent/EP1364231B1/de not_active Revoked
- 2001-12-12 AU AU2002239385A patent/AU2002239385A1/en not_active Abandoned
- 2001-12-12 DE DE0001364231T patent/DE01987139T1/de active Pending
- 2001-12-12 DE DE60118024T patent/DE60118024T2/de not_active Expired - Lifetime
- 2001-12-12 WO PCT/US2001/044707 patent/WO2002054115A2/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20020084425A1 (en) | 2002-07-04 |
KR20030072588A (ko) | 2003-09-15 |
ATE320611T1 (de) | 2006-04-15 |
JP2004517484A (ja) | 2004-06-10 |
KR100852985B1 (ko) | 2008-08-19 |
EP1364231A2 (de) | 2003-11-26 |
EP1364231B1 (de) | 2006-03-15 |
US6664554B2 (en) | 2003-12-16 |
DE01987139T1 (de) | 2004-05-19 |
DE60118024T2 (de) | 2006-11-02 |
WO2002054115A3 (en) | 2003-09-25 |
WO2002054115A2 (en) | 2002-07-11 |
AU2002239385A1 (en) | 2002-07-16 |
JP4109112B2 (ja) | 2008-07-02 |
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