DE60107639D1 - Polymer, Resistzusammensetzung und Musterübertragungsverfahren - Google Patents

Polymer, Resistzusammensetzung und Musterübertragungsverfahren

Info

Publication number
DE60107639D1
DE60107639D1 DE2001607639 DE60107639T DE60107639D1 DE 60107639 D1 DE60107639 D1 DE 60107639D1 DE 2001607639 DE2001607639 DE 2001607639 DE 60107639 T DE60107639 T DE 60107639T DE 60107639 D1 DE60107639 D1 DE 60107639D1
Authority
DE
Germany
Prior art keywords
polymer
transfer process
resist composition
pattern transfer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2001607639
Other languages
English (en)
Other versions
DE60107639T2 (de
Inventor
Tsunehiro Nishi
Mutsuo Nakashima
Koji Hasegawa
Seiichiro Tachibana
Takeshi Kinsho
Takeru Watanabe
Jun Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE60107639D1 publication Critical patent/DE60107639D1/de
Application granted granted Critical
Publication of DE60107639T2 publication Critical patent/DE60107639T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
DE60107639T 2000-09-14 2001-09-13 Polymer, Resistzusammensetzung und Musterübertragungsverfahren Expired - Lifetime DE60107639T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000279164 2000-09-14
JP2000279164 2000-09-14

Publications (2)

Publication Number Publication Date
DE60107639D1 true DE60107639D1 (de) 2005-01-13
DE60107639T2 DE60107639T2 (de) 2005-12-15

Family

ID=18764212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60107639T Expired - Lifetime DE60107639T2 (de) 2000-09-14 2001-09-13 Polymer, Resistzusammensetzung und Musterübertragungsverfahren

Country Status (5)

Country Link
US (1) US6673515B2 (de)
EP (1) EP1195390B1 (de)
KR (1) KR100555288B1 (de)
DE (1) DE60107639T2 (de)
TW (1) TW557304B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509135B2 (en) * 2000-03-06 2003-01-21 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
TW594410B (en) * 2000-09-07 2004-06-21 Shinetsu Chemical Co Resist compositions and patterning process
JP4524940B2 (ja) * 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR101050619B1 (ko) * 2005-02-18 2011-07-19 삼성전자주식회사 포토레지스트용 노르보넨 중합체 및 그를 포함하는 포토레지스트 조성물
TWI332122B (en) * 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1780199B1 (de) * 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorohydroxyalkylsulfonsäuresalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
EP1780198B1 (de) * 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorosulfonyloxyalkylsulfonatsalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4225427B2 (ja) * 2006-09-28 2009-02-18 三井化学株式会社 開環メタセシス重合体水素添加物、それを含有するレジスト材料及びパターン形成方法
US7527912B2 (en) * 2006-09-28 2009-05-05 Shin-Etsu Chemical Co., Ltd. Photoacid generators, resist compositions, and patterning process
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5309526B2 (ja) * 2007-10-19 2013-10-09 信越化学工業株式会社 開環メタセシス重合体水素添加物、それを含有するレジスト材料及びパターン形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
KR100195583B1 (ko) * 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
US6180316B1 (en) * 1998-01-16 2001-01-30 Jsr Corporation Radiation sensitive resin composition
JP3865919B2 (ja) * 1998-02-03 2007-01-10 富士フイルムホールディングス株式会社 ネガ型フォトレジスト組成物
WO2000053658A1 (en) * 1999-03-12 2000-09-14 The B.F. Goodrich Company Polycyclic polymers containing pendant cyclic anhydride groups
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
EP1127899A1 (de) * 2000-02-25 2001-08-29 Shipley Company LLC Polymer umd Photoresistzusammensetzungen
TWI295284B (de) * 2000-04-27 2008-04-01 Shinetsu Chemical Co
US6566038B2 (en) * 2000-04-28 2003-05-20 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6492090B2 (en) * 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6500961B2 (en) * 2000-06-01 2002-12-31 Shin-Etsu Chemical Co., Ltd. Lactone compounds having alicyclic structure and their manufacturing method
JP3928690B2 (ja) * 2000-07-06 2007-06-13 信越化学工業株式会社 脂環構造を有する新規ラクトン化合物及びその製造方法
US6660448B2 (en) * 2000-11-10 2003-12-09 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process

Also Published As

Publication number Publication date
TW557304B (en) 2003-10-11
EP1195390A1 (de) 2002-04-10
EP1195390B1 (de) 2004-12-08
US6673515B2 (en) 2004-01-06
US20020061463A1 (en) 2002-05-23
KR20020021340A (ko) 2002-03-20
KR100555288B1 (ko) 2006-03-03
DE60107639T2 (de) 2005-12-15

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