DE60106780D1 - Schaltungsanordnung zur Steuerung eines Referenzknotens in einem Leseverstärker - Google Patents

Schaltungsanordnung zur Steuerung eines Referenzknotens in einem Leseverstärker

Info

Publication number
DE60106780D1
DE60106780D1 DE60106780T DE60106780T DE60106780D1 DE 60106780 D1 DE60106780 D1 DE 60106780D1 DE 60106780 T DE60106780 T DE 60106780T DE 60106780 T DE60106780 T DE 60106780T DE 60106780 D1 DE60106780 D1 DE 60106780D1
Authority
DE
Germany
Prior art keywords
controlling
sense amplifier
circuit arrangement
reference node
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60106780T
Other languages
English (en)
Inventor
Salvatore Giove
Ambroggi Luca De
Salvatore Nicosia
Francesco Tomaiuolo
Kumar Promod
Giuseppe Piazza
Francesco Pipitone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60106780D1 publication Critical patent/DE60106780D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
DE60106780T 2001-12-28 2001-12-28 Schaltungsanordnung zur Steuerung eines Referenzknotens in einem Leseverstärker Expired - Lifetime DE60106780D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830817A EP1324347B1 (de) 2001-12-28 2001-12-28 Schaltungsanordnung zur Steuerung eines Referenzknotens in einem Leseverstärker

Publications (1)

Publication Number Publication Date
DE60106780D1 true DE60106780D1 (de) 2004-12-02

Family

ID=8184845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60106780T Expired - Lifetime DE60106780D1 (de) 2001-12-28 2001-12-28 Schaltungsanordnung zur Steuerung eines Referenzknotens in einem Leseverstärker

Country Status (3)

Country Link
US (1) US6801466B2 (de)
EP (1) EP1324347B1 (de)
DE (1) DE60106780D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
ITVA20040019A1 (it) * 2004-05-04 2004-08-04 St Microelectronics Srl Metodo e circuito di verifica ed eventuale sostituzione di celle di riferimento difettose di una memoria
US7345512B2 (en) * 2004-05-04 2008-03-18 Silicon Storage Technology, Inc. Sense amplifier for low voltage high speed sensing
KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US7236415B2 (en) * 2004-09-01 2007-06-26 Micron Technology, Inc. Sample and hold memory sense amplifier
JP4329658B2 (ja) * 2004-09-17 2009-09-09 株式会社デンソー センスアンプ回路
US7466613B2 (en) * 2005-04-15 2008-12-16 Atmel Corporation Sense amplifier for flash memory device
US7369450B2 (en) 2006-05-26 2008-05-06 Freescale Semiconductor, Inc. Nonvolatile memory having latching sense amplifier and method of operation
US7583107B2 (en) * 2006-09-27 2009-09-01 Atmel Corporation Sense amplifier circuit for low voltage applications
KR20090028193A (ko) * 2007-09-14 2009-03-18 삼성전자주식회사 전압강하 측정회로, 이를 포함하는 반도체 장치, 시스템 및반도체 장치의 전압강하 측정방법
US20090129185A1 (en) * 2007-11-19 2009-05-21 Cassels John J Semiconductor circuits capable of self detecting defects
TWI386656B (zh) * 2009-07-02 2013-02-21 Novatek Microelectronics Corp 電容值測量電路與方法
EP3562019B1 (de) * 2018-04-26 2021-03-03 ams AG Inverter-schaltungsanordnung
US11092988B2 (en) 2018-09-25 2021-08-17 Invensense, Inc. Start-up speed enhancement circuit and method for lower-power regulators
US10978111B1 (en) * 2019-12-05 2021-04-13 Winbond Electronics Corp. Sense amplifier circuit with reference voltage holding circuit for maintaining sense amplifier reference voltage when the sense amplifier operates under standby mode
CN113160859B (zh) * 2021-03-31 2021-12-14 珠海博雅科技有限公司 灵敏放大器及存储器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052307A (en) * 1998-08-11 2000-04-18 Texas Instruments Incorporated Leakage tolerant sense amplifier
JP2001184881A (ja) * 1999-12-28 2001-07-06 Toshiba Corp 不揮発性半導体メモリの読み出し回路
US6507523B2 (en) * 2000-12-20 2003-01-14 Micron Technology, Inc. Non-volatile memory with power standby

Also Published As

Publication number Publication date
EP1324347B1 (de) 2004-10-27
US6801466B2 (en) 2004-10-05
US20030142568A1 (en) 2003-07-31
EP1324347A1 (de) 2003-07-02

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Legal Events

Date Code Title Description
8332 No legal effect for de