DE60103727D1 - Herstellungsverfahren von aktiven Elementen für Laserquellen - Google Patents

Herstellungsverfahren von aktiven Elementen für Laserquellen

Info

Publication number
DE60103727D1
DE60103727D1 DE60103727T DE60103727T DE60103727D1 DE 60103727 D1 DE60103727 D1 DE 60103727D1 DE 60103727 T DE60103727 T DE 60103727T DE 60103727 T DE60103727 T DE 60103727T DE 60103727 D1 DE60103727 D1 DE 60103727D1
Authority
DE
Germany
Prior art keywords
manufacturing process
active elements
laser sources
sources
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60103727T
Other languages
English (en)
Other versions
DE60103727T2 (de
Inventor
Jean-Eucher Montagne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Industriel des Lasers CILAS SA
Original Assignee
Compagnie Industriel des Lasers CILAS SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Industriel des Lasers CILAS SA filed Critical Compagnie Industriel des Lasers CILAS SA
Application granted granted Critical
Publication of DE60103727D1 publication Critical patent/DE60103727D1/de
Publication of DE60103727T2 publication Critical patent/DE60103727T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0612—Non-homogeneous structure

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60103727T 2000-12-26 2001-11-29 Herstellungsverfahren von aktiven Elementen für Laserquellen Expired - Fee Related DE60103727T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0017021A FR2818813B1 (fr) 2000-12-26 2000-12-26 Procede pour fabriquer des elements actifs pour source laser
FR0017021 2000-12-26

Publications (2)

Publication Number Publication Date
DE60103727D1 true DE60103727D1 (de) 2004-07-15
DE60103727T2 DE60103727T2 (de) 2005-06-23

Family

ID=8858194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60103727T Expired - Fee Related DE60103727T2 (de) 2000-12-26 2001-11-29 Herstellungsverfahren von aktiven Elementen für Laserquellen

Country Status (5)

Country Link
US (1) US6558972B2 (de)
EP (1) EP1220387B1 (de)
CN (1) CN1362765A (de)
DE (1) DE60103727T2 (de)
FR (1) FR2818813B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2002116304A (ru) * 2002-06-19 2004-01-27 Государственное унитарное предпри тие Научно-исследовательский институт лазерной физики Способ лазерной проекции изображений и лазерный проектор

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2648643B1 (fr) 1989-06-20 1991-08-30 Thomson Composants Microondes Circuit d'interface entre deux circuits numeriques de natures differentes
FR2648962B1 (fr) * 1989-06-23 1994-09-09 Thomson Csf Structure d'illumination d'un barreau laser, a sources optiques defocalisees
JPH0563263A (ja) * 1991-08-30 1993-03-12 Hoya Corp 半導体レーザ励起固体レーザ装置
US5454002A (en) * 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
JPH07321394A (ja) * 1994-05-23 1995-12-08 Nec Corp 固体レーザ用結晶
US6159771A (en) * 1999-07-27 2000-12-12 Smtek Inc. Method of manufacturing diodes
FR2803697B1 (fr) * 2000-01-06 2003-05-30 Cilas Element actif pour source laser et source laser comportant un tel element actif
US6379985B1 (en) * 2001-08-01 2002-04-30 Xerox Corporation Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

Also Published As

Publication number Publication date
US6558972B2 (en) 2003-05-06
DE60103727T2 (de) 2005-06-23
EP1220387B1 (de) 2004-06-09
US20020085607A1 (en) 2002-07-04
EP1220387A1 (de) 2002-07-03
CN1362765A (zh) 2002-08-07
FR2818813B1 (fr) 2005-05-27
FR2818813A1 (fr) 2002-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee