DE60041428D1 - Neue Esterverbindungen, Polymere, Resistzusammensetzungen und Strukturierungsverfahren - Google Patents

Neue Esterverbindungen, Polymere, Resistzusammensetzungen und Strukturierungsverfahren

Info

Publication number
DE60041428D1
DE60041428D1 DE60041428T DE60041428T DE60041428D1 DE 60041428 D1 DE60041428 D1 DE 60041428D1 DE 60041428 T DE60041428 T DE 60041428T DE 60041428 T DE60041428 T DE 60041428T DE 60041428 D1 DE60041428 D1 DE 60041428D1
Authority
DE
Germany
Prior art keywords
polymers
ester compounds
resist compositions
new ester
structuring methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041428T
Other languages
English (en)
Inventor
Takeshi Kinsho
Tsunehiro Nishi
Hideshi Kurihara
Mutsuo Nakashima
Koji Hasegawa
Takeru Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE60041428D1 publication Critical patent/DE60041428D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/60—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members
    • C07C2603/66—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members containing five-membered rings
    • C07C2603/68—Dicyclopentadienes; Hydrogenated dicyclopentadienes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Paints Or Removers (AREA)
DE60041428T 1999-02-25 2000-02-25 Neue Esterverbindungen, Polymere, Resistzusammensetzungen und Strukturierungsverfahren Expired - Lifetime DE60041428D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4740699 1999-02-25
JP17494599A JP3680920B2 (ja) 1999-02-25 1999-06-22 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法

Publications (1)

Publication Number Publication Date
DE60041428D1 true DE60041428D1 (de) 2009-03-12

Family

ID=26387563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041428T Expired - Lifetime DE60041428D1 (de) 1999-02-25 2000-02-25 Neue Esterverbindungen, Polymere, Resistzusammensetzungen und Strukturierungsverfahren

Country Status (6)

Country Link
US (1) US6284429B1 (de)
EP (1) EP1031879B1 (de)
JP (1) JP3680920B2 (de)
KR (1) KR100461930B1 (de)
DE (1) DE60041428D1 (de)
TW (1) TWI225048B (de)

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TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
TWI228504B (en) * 1998-11-02 2005-03-01 Shinetsu Chemical Co Novel ester compounds, polymers, resist compositions and patterning process
KR100425442B1 (ko) * 1999-08-24 2004-03-30 삼성전자주식회사 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물
JP3969909B2 (ja) * 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP4269119B2 (ja) * 1999-10-25 2009-05-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6524765B1 (en) * 1999-11-15 2003-02-25 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100389912B1 (ko) * 1999-12-08 2003-07-04 삼성전자주식회사 지환식 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR20010054851A (ko) * 1999-12-08 2001-07-02 윤종용 지환식 감광성 폴리머 및 이를 포함하는 레지스트조성물과 그 제조방법
EP1130468A3 (de) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer und Photolackzusammensetzungen
EP1127870B1 (de) * 2000-02-26 2003-11-05 Shipley Company LLC Monomere,Polymere,Verfahren zu ihrer Synthese und Photoresistcompositionen
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
US6538086B1 (en) * 2000-02-28 2003-03-25 Industrial Technology Research Institute Polymer with a pericyclic protective group and resist composition containing the same
US6808860B2 (en) * 2000-04-17 2004-10-26 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6316159B1 (en) * 2000-06-14 2001-11-13 Everlight Usa, Inc. Chemical amplified photoresist composition
US6441115B1 (en) * 2000-06-30 2002-08-27 Everlight Usa, Inc. Photosensitive polymer
JP3589160B2 (ja) * 2000-07-07 2004-11-17 日本電気株式会社 レジスト用材料、化学増幅型レジスト及びそれを用いたパターン形成方法
AU2001279056A1 (en) * 2000-07-28 2002-02-13 Goodrich Corporation Optical waveguides and methods for making the same
US6391521B1 (en) * 2000-08-16 2002-05-21 International Business Machines Corporation Resist compositions containing bulky anhydride additives
KR100557555B1 (ko) * 2001-06-21 2006-03-03 주식회사 하이닉스반도체 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6946233B2 (en) * 2001-07-24 2005-09-20 Shin-Etsu Chemical Co., Ltd. Polymer, resist material and patterning method
DE10224217A1 (de) * 2002-05-31 2003-12-18 Infineon Technologies Ag Photosensitiver Lack zur Beschichtung auf einem Halbleitersubstrat oder einer Maske
US7341816B2 (en) * 2003-02-24 2008-03-11 Promerus, Llc Method of controlling the differential dissolution rate of photoresist compositions, polycyclic olefin polymers and monomers used for making such polymers
US7601479B2 (en) * 2003-09-12 2009-10-13 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
US7101654B2 (en) * 2004-01-14 2006-09-05 Promerus Llc Norbornene-type monomers and polymers containing pendent lactone or sultone groups
JP5269311B2 (ja) 2004-05-20 2013-08-21 三菱レイヨン株式会社 （メタ）アクリル酸エステル、重合体、およびレジスト組成物
JP2006104378A (ja) * 2004-10-07 2006-04-20 Mitsubishi Rayon Co Ltd レジスト用単量体およびレジスト用重合体
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1780199B1 (de) 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorohydroxyalkylsulfonsäuresalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
EP1780198B1 (de) 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Neuartige Fluorosulfonyloxyalkylsulfonatsalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren
JP4801477B2 (ja) * 2006-03-24 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法
JP5124806B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
KR101035742B1 (ko) 2006-09-28 2011-05-20 신에쓰 가가꾸 고교 가부시끼가이샤 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법
KR101175818B1 (ko) * 2006-11-27 2012-08-24 코오롱인더스트리 주식회사 노보넨계 중합체 또는 공중합체와 그 제조방법
US9872399B1 (en) * 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating

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JPH04215661A (ja) 1990-12-14 1992-08-06 Fujitsu Ltd レジストパターンの形成方法
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TWI228504B (en) 1998-11-02 2005-03-01 Shinetsu Chemical Co Novel ester compounds, polymers, resist compositions and patterning process

Also Published As

Publication number Publication date
EP1031879A1 (de) 2000-08-30
TWI225048B (en) 2004-12-11
JP2000309611A (ja) 2000-11-07
JP3680920B2 (ja) 2005-08-10
KR100461930B1 (ko) 2004-12-17
EP1031879B1 (de) 2009-01-21
KR20000058167A (ko) 2000-09-25
US6284429B1 (en) 2001-09-04

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Legal Events

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