DE60041408D1 - Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren - Google Patents

Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren

Info

Publication number
DE60041408D1
DE60041408D1 DE60041408T DE60041408T DE60041408D1 DE 60041408 D1 DE60041408 D1 DE 60041408D1 DE 60041408 T DE60041408 T DE 60041408T DE 60041408 T DE60041408 T DE 60041408T DE 60041408 D1 DE60041408 D1 DE 60041408D1
Authority
DE
Germany
Prior art keywords
plasma
determining
main component
component analysis
optical spectra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041408T
Other languages
German (de)
English (en)
Inventor
Anthony John Toprac
Hongyu Yue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60041408D1 publication Critical patent/DE60041408D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • C07K14/195—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K39/00—Medicinal preparations containing antigens or antibodies
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32187—Correlation between controlling parameters for influence on quality parameters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Biophysics (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Genetics & Genomics (AREA)
  • Medicinal Chemistry (AREA)
  • Molecular Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
DE60041408T 1999-09-08 2000-06-13 Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren Expired - Lifetime DE60041408D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15289799P 1999-09-08 1999-09-08
US16386899P 1999-11-05 1999-11-05
US09/491,845 US6582618B1 (en) 1999-09-08 2000-01-26 Method of determining etch endpoint using principal components analysis of optical emission spectra
PCT/US2000/016100 WO2001018845A1 (en) 1999-09-08 2000-06-13 Method of determining etch endpoint using principal components analysis of optical emission spectra

Publications (1)

Publication Number Publication Date
DE60041408D1 true DE60041408D1 (de) 2009-03-05

Family

ID=27387343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041408T Expired - Lifetime DE60041408D1 (de) 1999-09-08 2000-06-13 Verfahren zur bestimmung des plasmaätzendpunktes unter verwendung der hauptkomponentenanalyse von optischen spektren

Country Status (5)

Country Link
US (1) US6582618B1 (https=)
EP (1) EP1210724B1 (https=)
JP (1) JP2003509839A (https=)
DE (1) DE60041408D1 (https=)
WO (1) WO2001018845A1 (https=)

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US7505879B2 (en) 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
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US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control
US6915177B2 (en) * 2002-09-30 2005-07-05 Advanced Micro Devices, Inc. Comprehensive integrated lithographic process control system based on product design and yield feedback system
US6927076B2 (en) * 2002-10-05 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Method for recovering a plasma process
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
JP2007501532A (ja) * 2003-05-09 2007-01-25 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重プロセスにおける包絡線フォロア終点検出
US6952657B2 (en) * 2003-09-10 2005-10-04 Peak Sensor Systems Llc Industrial process fault detection using principal component analysis
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060000799A1 (en) * 2004-06-30 2006-01-05 Hyun-Ho Doh Methods and apparatus for determining endpoint in a plasma processing system
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
US7695984B1 (en) 2005-04-20 2010-04-13 Pivotal Systems Corporation Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
JP4643392B2 (ja) * 2005-08-24 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
US7879732B2 (en) * 2007-12-18 2011-02-01 Chartered Semiconductor Manufacturing Ltd. Thin film etching method and semiconductor device fabrication using same
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US20110168671A1 (en) * 2010-01-08 2011-07-14 International Business Machines Corporation Process control using signal representative of a throttle valve position
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
CN104736744B (zh) * 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
KR102953221B1 (ko) 2015-11-16 2026-04-15 도쿄엘렉트론가부시키가이샤 진보된 광학 센서 및 플라즈마 챔버용 방법
US10522429B2 (en) 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
WO2018094219A1 (en) 2016-11-18 2018-05-24 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
US10262910B2 (en) * 2016-12-23 2019-04-16 Lam Research Corporation Method of feature exaction from time-series of spectra to control endpoint of process
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
US11328964B2 (en) 2018-12-13 2022-05-10 Applied Materials, Inc. Prescriptive analytics in highly collinear response space
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US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
TW202204876A (zh) * 2020-07-16 2022-02-01 日商東京威力科創股份有限公司 資料處理裝置、資料處理系統、資料處理方法及資料處理程式
US12489022B2 (en) 2020-08-12 2025-12-02 Applied Materials, Inc. In-situ etch rate and etch rate uniformity detection system
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Also Published As

Publication number Publication date
EP1210724A1 (en) 2002-06-05
EP1210724B1 (en) 2009-01-14
WO2001018845A1 (en) 2001-03-15
US6582618B1 (en) 2003-06-24
JP2003509839A (ja) 2003-03-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES, INC., GRAND CAYMANN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,