JP2003509839A - 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法 - Google Patents

発光スペクトルの主成分分析を用いてエッチ終点を決定する方法

Info

Publication number
JP2003509839A
JP2003509839A JP2001522570A JP2001522570A JP2003509839A JP 2003509839 A JP2003509839 A JP 2003509839A JP 2001522570 A JP2001522570 A JP 2001522570A JP 2001522570 A JP2001522570 A JP 2001522570A JP 2003509839 A JP2003509839 A JP 2003509839A
Authority
JP
Japan
Prior art keywords
matrix
score
etch
oes
principal components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001522570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003509839A5 (https=
Inventor
トプラック，アンソニー・ジョン
ユエ，ホンギュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003509839A publication Critical patent/JP2003509839A/ja
Publication of JP2003509839A5 publication Critical patent/JP2003509839A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • C07K14/195—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from bacteria
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K39/00—Medicinal preparations containing antigens or antibodies
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32187—Correlation between controlling parameters for influence on quality parameters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Biophysics (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Genetics & Genomics (AREA)
  • Medicinal Chemistry (AREA)
  • Molecular Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
JP2001522570A 1999-09-08 2000-06-13 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法 Pending JP2003509839A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US15289799P 1999-09-08 1999-09-08
US60/152,879 1999-09-08
US16386899P 1999-11-05 1999-11-05
US60/163,868 1999-11-05
US09/491,845 2000-01-26
US09/491,845 US6582618B1 (en) 1999-09-08 2000-01-26 Method of determining etch endpoint using principal components analysis of optical emission spectra
PCT/US2000/016100 WO2001018845A1 (en) 1999-09-08 2000-06-13 Method of determining etch endpoint using principal components analysis of optical emission spectra

Publications (2)

Publication Number Publication Date
JP2003509839A true JP2003509839A (ja) 2003-03-11
JP2003509839A5 JP2003509839A5 (https=) 2007-06-14

Family

ID=27387343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001522570A Pending JP2003509839A (ja) 1999-09-08 2000-06-13 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法

Country Status (5)

Country Link
US (1) US6582618B1 (https=)
EP (1) EP1210724B1 (https=)
JP (1) JP2003509839A (https=)
DE (1) DE60041408D1 (https=)
WO (1) WO2001018845A1 (https=)

Cited By (6)

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JP2007059585A (ja) * 2005-08-24 2007-03-08 Tokyo Electron Ltd プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
JP2007266641A (ja) * 2002-06-12 2007-10-11 Semisysco Co Ltd 半導体乾式エッチング工程でのエッチング終了点の検出方法
JP2015532544A (ja) * 2012-10-17 2015-11-09 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
JP2020181959A (ja) * 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JPWO2022014392A1 (https=) * 2020-07-16 2022-01-20
WO2026009272A1 (ja) * 2024-07-01 2026-01-08 株式会社日立ハイテク 探索装置、データ圧縮処理装置、半導体デバイス製造システム、探索方法およびデータ圧縮処理方法

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WO2002003441A1 (en) * 2000-07-04 2002-01-10 Tokyo Electron Limited Operation monitoring method for treatment apparatus
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
KR100628392B1 (ko) * 2002-06-05 2006-09-26 동경 엘렉트론 주식회사 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템
US7505879B2 (en) 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
AU2003245315A1 (en) 2002-06-28 2004-01-19 Tokyo Electron Limited Method and system for predicting process performance using material processing tool and sensor data
US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control
US6915177B2 (en) * 2002-09-30 2005-07-05 Advanced Micro Devices, Inc. Comprehensive integrated lithographic process control system based on product design and yield feedback system
US6927076B2 (en) * 2002-10-05 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Method for recovering a plasma process
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
JP2007501532A (ja) * 2003-05-09 2007-01-25 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重プロセスにおける包絡線フォロア終点検出
US6952657B2 (en) * 2003-09-10 2005-10-04 Peak Sensor Systems Llc Industrial process fault detection using principal component analysis
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060000799A1 (en) * 2004-06-30 2006-01-05 Hyun-Ho Doh Methods and apparatus for determining endpoint in a plasma processing system
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
US7695984B1 (en) 2005-04-20 2010-04-13 Pivotal Systems Corporation Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
US7879732B2 (en) * 2007-12-18 2011-02-01 Chartered Semiconductor Manufacturing Ltd. Thin film etching method and semiconductor device fabrication using same
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US20110168671A1 (en) * 2010-01-08 2011-07-14 International Business Machines Corporation Process control using signal representative of a throttle valve position
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
KR102953221B1 (ko) 2015-11-16 2026-04-15 도쿄엘렉트론가부시키가이샤 진보된 광학 센서 및 플라즈마 챔버용 방법
US10522429B2 (en) 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US10773282B2 (en) 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
WO2018094219A1 (en) 2016-11-18 2018-05-24 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
US10262910B2 (en) * 2016-12-23 2019-04-16 Lam Research Corporation Method of feature exaction from time-series of spectra to control endpoint of process
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
US11328964B2 (en) 2018-12-13 2022-05-10 Applied Materials, Inc. Prescriptive analytics in highly collinear response space
TW202601068A (zh) 2019-05-23 2026-01-01 日商東京威力科創股份有限公司 光學偵測器、具有光學偵測器的系統、以及用於診斷、檢測、及測量的方法
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
US12489022B2 (en) 2020-08-12 2025-12-02 Applied Materials, Inc. In-situ etch rate and etch rate uniformity detection system
US11830779B2 (en) 2020-08-12 2023-11-28 Applied Materials, Inc. In-situ etch material selectivity detection system
US12072267B2 (en) * 2020-08-31 2024-08-27 Applied Materials, Inc. Method and hardware for post maintenance vacuum recovery system
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

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JP2000331985A (ja) * 1999-05-18 2000-11-30 Tokyo Electron Ltd 終点検出方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266641A (ja) * 2002-06-12 2007-10-11 Semisysco Co Ltd 半導体乾式エッチング工程でのエッチング終了点の検出方法
JP2007059585A (ja) * 2005-08-24 2007-03-08 Tokyo Electron Ltd プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
JP2015532544A (ja) * 2012-10-17 2015-11-09 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
JP2020181959A (ja) * 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
US11556853B2 (en) 2019-04-26 2023-01-17 Tokyo Electron Limited Learning method, management device, and management program
JPWO2022014392A1 (https=) * 2020-07-16 2022-01-20
WO2022014392A1 (ja) * 2020-07-16 2022-01-20 東京エレクトロン株式会社 データ処理装置、データ処理システム、データ処理方法及びデータ処理プログラム
CN115803850A (zh) * 2020-07-16 2023-03-14 东京毅力科创株式会社 数据处理装置、数据处理系统、数据处理方法以及数据处理程序
JP7427788B2 (ja) 2020-07-16 2024-02-05 東京エレクトロン株式会社 データ処理装置、データ処理システム、データ処理方法及びデータ処理プログラム
WO2026009272A1 (ja) * 2024-07-01 2026-01-08 株式会社日立ハイテク 探索装置、データ圧縮処理装置、半導体デバイス製造システム、探索方法およびデータ圧縮処理方法

Also Published As

Publication number Publication date
EP1210724A1 (en) 2002-06-05
EP1210724B1 (en) 2009-01-14
WO2001018845A1 (en) 2001-03-15
DE60041408D1 (de) 2009-03-05
US6582618B1 (en) 2003-06-24

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