DE60036762D1 - Lichtkoppler - Google Patents

Lichtkoppler

Info

Publication number
DE60036762D1
DE60036762D1 DE60036762T DE60036762T DE60036762D1 DE 60036762 D1 DE60036762 D1 DE 60036762D1 DE 60036762 T DE60036762 T DE 60036762T DE 60036762 T DE60036762 T DE 60036762T DE 60036762 D1 DE60036762 D1 DE 60036762D1
Authority
DE
Germany
Prior art keywords
light coupler
coupler
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60036762T
Other languages
English (en)
Other versions
DE60036762T2 (de
Inventor
Katsunori Makiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60036762D1 publication Critical patent/DE60036762D1/de
Publication of DE60036762T2 publication Critical patent/DE60036762T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE60036762T 1999-08-23 2000-08-22 Lichtkoppler Expired - Fee Related DE60036762T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23564499A JP3676136B2 (ja) 1999-08-23 1999-08-23 光結合素子
JP23564499 1999-08-23

Publications (2)

Publication Number Publication Date
DE60036762D1 true DE60036762D1 (de) 2007-11-29
DE60036762T2 DE60036762T2 (de) 2008-07-24

Family

ID=16989079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036762T Expired - Fee Related DE60036762T2 (de) 1999-08-23 2000-08-22 Lichtkoppler

Country Status (5)

Country Link
US (1) US6507048B1 (de)
EP (1) EP1079250B1 (de)
JP (1) JP3676136B2 (de)
DE (1) DE60036762T2 (de)
TW (1) TWI223458B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006753A (ja) * 2002-04-05 2004-01-08 Canon Inc 光半導体用パッケージ
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
JP5019799B2 (ja) * 2006-06-15 2012-09-05 シャープ株式会社 光結合素子、電子機器および光結合素子の製造方法
JP5649547B2 (ja) * 2011-10-11 2015-01-07 株式会社東芝 半導体装置の製造方法
US9472536B2 (en) 2011-10-11 2016-10-18 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP2013197302A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 半導体装置およびその製造方法
US11299466B2 (en) 2016-04-12 2022-04-12 Lg Chem, Ltd. Compound, and organic electronic element comprising same
CN116093095B (zh) * 2022-12-14 2024-06-14 莱弗利科技(苏州)有限公司 光耦隔离器及其封装工艺
CN117810219A (zh) * 2024-01-09 2024-04-02 深圳市奥伦德元器件有限公司 一种高耐压绝缘光电耦合器及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1948843A1 (de) * 1969-09-26 1971-04-01 Siemens Ag Optoelektronische Anordnung
US4291943A (en) * 1977-08-05 1981-09-29 Minnesota Mining And Manufacturing Company Connector for optical fiber cables
JPS59177978A (ja) * 1983-03-26 1984-10-08 Nec Corp マルチチヤンネル型半導体光結合装置
US4612670A (en) * 1984-05-16 1986-09-16 General Dynamics Corporation Electro-optical connection between electronic modules
US5148243A (en) * 1985-06-25 1992-09-15 Hewlett-Packard Company Optical isolator with encapsulation
US4712862A (en) * 1986-08-27 1987-12-15 Rca Corporation Optical fiber connector and method of assembling same
JPH0479380A (ja) * 1990-07-23 1992-03-12 Nec Corp 多チャンネルホトカプラ
JPH05251731A (ja) 1992-03-09 1993-09-28 Sharp Corp 光結合装置およびこれに使用する１次モールド金型
JP2600616B2 (ja) * 1994-09-08 1997-04-16 日本電気株式会社 光結合装置
JP3401128B2 (ja) 1995-09-25 2003-04-28 シャープ株式会社 多チャンネル型光結合装置の製造方法
JPH09205223A (ja) 1995-11-24 1997-08-05 Denso Corp 半導体装置
JPH09307135A (ja) * 1996-05-17 1997-11-28 Toshiba Corp 光複合素子

Also Published As

Publication number Publication date
EP1079250A2 (de) 2001-02-28
EP1079250A3 (de) 2004-02-11
DE60036762T2 (de) 2008-07-24
US6507048B1 (en) 2003-01-14
EP1079250B1 (de) 2007-10-17
JP3676136B2 (ja) 2005-07-27
TWI223458B (en) 2004-11-01
JP2001060714A (ja) 2001-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee