DE60033035D1 - Gekühltes fenster - Google Patents

Gekühltes fenster

Info

Publication number
DE60033035D1
DE60033035D1 DE60033035T DE60033035T DE60033035D1 DE 60033035 D1 DE60033035 D1 DE 60033035D1 DE 60033035 T DE60033035 T DE 60033035T DE 60033035 T DE60033035 T DE 60033035T DE 60033035 D1 DE60033035 D1 DE 60033035D1
Authority
DE
Germany
Prior art keywords
cooled window
window
cooled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033035T
Other languages
English (en)
Other versions
DE60033035T2 (de
Inventor
Igor Fidelman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag CVD Systems Ltd
Original Assignee
Steag CVD Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag CVD Systems Ltd filed Critical Steag CVD Systems Ltd
Application granted granted Critical
Publication of DE60033035D1 publication Critical patent/DE60033035D1/de
Publication of DE60033035T2 publication Critical patent/DE60033035T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
DE60033035T 1999-05-27 2000-05-11 Gekühltes fenster Expired - Lifetime DE60033035T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US321198 1994-10-11
US09/321,198 US6284051B1 (en) 1999-05-27 1999-05-27 Cooled window
PCT/IB2000/000631 WO2000073533A1 (en) 1999-05-27 2000-05-11 Cooled window

Publications (2)

Publication Number Publication Date
DE60033035D1 true DE60033035D1 (de) 2007-03-08
DE60033035T2 DE60033035T2 (de) 2007-08-30

Family

ID=23249610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033035T Expired - Lifetime DE60033035T2 (de) 1999-05-27 2000-05-11 Gekühltes fenster

Country Status (6)

Country Link
US (1) US6284051B1 (de)
EP (1) EP1203108B1 (de)
JP (1) JP4902914B2 (de)
KR (1) KR100699104B1 (de)
DE (1) DE60033035T2 (de)
WO (1) WO2000073533A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4540796B2 (ja) * 2000-04-21 2010-09-08 東京エレクトロン株式会社 石英ウインドウ、リフレクタ及び熱処理装置
US6559424B2 (en) * 2001-01-02 2003-05-06 Mattson Technology, Inc. Windows used in thermal processing chambers
US6530539B2 (en) * 2001-02-09 2003-03-11 Raytheon Company Internal fluid cooled window assembly
JP4942880B2 (ja) * 2001-03-14 2012-05-30 東京エレクトロン株式会社 熱処理装置
US6563092B1 (en) * 2001-11-28 2003-05-13 Novellus Systems, Inc. Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry
DE10208450B4 (de) * 2002-02-27 2004-09-16 Infineon Technologies Ag Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen
KR100468203B1 (ko) * 2002-08-16 2005-01-26 어댑티브프라즈마테크놀로지 주식회사 플라즈마 에칭시스템에 구비된 돔의 온도제어장치 및 그방법
DE10260672A1 (de) * 2002-12-23 2004-07-15 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten
JP4273932B2 (ja) * 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
CN101258387A (zh) 2005-07-05 2008-09-03 马特森技术公司 确定半导体晶片的光学属性的方法与系统
US20150361557A1 (en) * 2014-06-17 2015-12-17 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US7543981B2 (en) 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature
US8986454B2 (en) * 2010-06-08 2015-03-24 Applied Materials, Inc. Window assembly for use in substrate processing systems
SG11201508481PA (en) 2013-05-10 2015-11-27 Applied Materials Inc Dome cooling using compliant material
TWI644362B (zh) * 2013-06-21 2018-12-11 應用材料股份有限公司 用於熱腔室應用及製程的光管窗口結構
US10410890B2 (en) * 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US9863043B2 (en) 2014-05-27 2018-01-09 Applied Materials, Inc. Window cooling using compliant material
US10240236B2 (en) * 2015-03-06 2019-03-26 Lam Research Corporation Clean resistant windows for ultraviolet thermal processing
US11538666B2 (en) 2017-11-15 2022-12-27 Lam Research Corporation Multi-zone cooling of plasma heated window
KR20220137990A (ko) * 2020-02-11 2022-10-12 램 리써치 코포레이션 반도체 프로세싱 챔버 윈도우를 위한 냉각 플레이트
US11958246B2 (en) * 2020-03-03 2024-04-16 Sciperio, Inc Laser oven with transparent chamber and external laser source

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871739A (en) * 1972-08-14 1975-03-18 Gen Dynamics Corp System for protection from laser radiation
DE3037205C2 (de) 1980-10-02 1982-12-16 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Schutzeinrichtung für optische bzw. IR-Fenster
US4550684A (en) 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating
JPS63106767U (de) * 1986-12-26 1988-07-09
JPH0334538A (ja) * 1989-06-30 1991-02-14 Toshiba Corp 光励起反応装置
CA2001009C (en) 1989-10-19 2000-11-28 Richard S. Adams Infrared window
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5008593A (en) * 1990-07-13 1991-04-16 The United States Of America As Represented By The Secretary Of The Air Force Coaxial liquid cooling of high power microwave excited plasma UV lamps
JPH04311573A (ja) * 1991-04-10 1992-11-04 Kawasaki Steel Corp 光ｃｖｄ装置
FR2686967B1 (fr) 1992-02-04 1999-04-09 France Telecom Dispositif de refroidissement d'un four de traitement d'un element et four equipe d'un tel dispositif.
JPH06333846A (ja) * 1993-05-26 1994-12-02 Canon Inc 薄膜形成装置
JPH08107073A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd プラズマ処理装置、及びその洗浄方法
JPH08241797A (ja) * 1995-03-03 1996-09-17 Hitachi Ltd プラズマ処理装置
US5747917A (en) * 1996-02-14 1998-05-05 Applied Materials, Inc. Double-walled mircrowave plasma based applicator
JPH10340892A (ja) * 1997-06-06 1998-12-22 Sumitomo Metal Ind Ltd プラズマ処理装置
JP3470557B2 (ja) * 1997-06-27 2003-11-25 株式会社日立製作所 プラズマ処理装置
JPH1140545A (ja) * 1997-07-18 1999-02-12 Sony Corp 半導体装置の製造方法
JP3930625B2 (ja) * 1997-10-31 2007-06-13 芝浦メカトロニクス株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP4902914B2 (ja) 2012-03-21
KR20020021640A (ko) 2002-03-21
DE60033035T2 (de) 2007-08-30
EP1203108A1 (de) 2002-05-08
EP1203108B1 (de) 2007-01-17
JP2003500865A (ja) 2003-01-07
WO2000073533A1 (en) 2000-12-07
US6284051B1 (en) 2001-09-04
KR100699104B1 (ko) 2007-03-21

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Legal Events

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