DE60028030D1 - Hocheffiziente elektronische Schaltung zur Erzeugung und Regelung einer Versorgungsspannung - Google Patents
Hocheffiziente elektronische Schaltung zur Erzeugung und Regelung einer VersorgungsspannungInfo
- Publication number
- DE60028030D1 DE60028030D1 DE60028030T DE60028030T DE60028030D1 DE 60028030 D1 DE60028030 D1 DE 60028030D1 DE 60028030 T DE60028030 T DE 60028030T DE 60028030 T DE60028030 T DE 60028030T DE 60028030 D1 DE60028030 D1 DE 60028030D1
- Authority
- DE
- Germany
- Prior art keywords
- regulating
- generating
- supply voltage
- electronic circuit
- highly efficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00830586A EP1184962B1 (de) | 2000-08-22 | 2000-08-22 | Hocheffiziente elektronische Schaltung zur Erzeugung und Regelung einer Versorgungsspannung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60028030D1 true DE60028030D1 (de) | 2006-06-22 |
DE60028030T2 DE60028030T2 (de) | 2006-12-14 |
Family
ID=8175460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60028030T Expired - Lifetime DE60028030T2 (de) | 2000-08-22 | 2000-08-22 | Hocheffiziente elektronische Schaltung zur Erzeugung und Regelung einer Versorgungsspannung |
Country Status (3)
Country | Link |
---|---|
US (1) | US6518830B2 (de) |
EP (1) | EP1184962B1 (de) |
DE (1) | DE60028030T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6642774B1 (en) * | 2002-06-28 | 2003-11-04 | Intel Corporation | High precision charge pump regulation |
US6937487B1 (en) * | 2003-04-29 | 2005-08-30 | National Semiconductor Corporation | Apparatus and method for a voltage booster with improved voltage regulator efficiency |
ITMI20031924A1 (it) | 2003-10-07 | 2005-04-08 | Atmel Corp | Convertitore da digitale ad analogico ad alta precisione con consumo di energia ottimizzato. |
JP4059838B2 (ja) | 2003-11-14 | 2008-03-12 | ソニー株式会社 | バッテリパック、バッテリ保護処理装置、およびバッテリ保護処理装置の制御方法 |
US7149132B2 (en) * | 2004-09-24 | 2006-12-12 | Ovonyx, Inc. | Biasing circuit for use in a non-volatile memory device |
US20070070725A1 (en) * | 2005-09-29 | 2007-03-29 | Hynix Semiconductor Inc. | Internal voltage supplying device |
US20080084239A1 (en) * | 2006-09-08 | 2008-04-10 | Matsushita Electric Industrial Co., Ltd. | Regulated charge pump circuit |
US7477092B2 (en) * | 2006-12-29 | 2009-01-13 | Sandisk Corporation | Unified voltage generation apparatus with improved power efficiency |
US7440342B2 (en) * | 2006-12-29 | 2008-10-21 | Sandisk Corporation | Unified voltage generation method with improved power efficiency |
US7701184B2 (en) * | 2007-08-10 | 2010-04-20 | Micron Technology, Inc. | Voltage protection circuit for thin oxide transistors, and memory device and processor-based system using same |
US8044705B2 (en) * | 2007-08-28 | 2011-10-25 | Sandisk Technologies Inc. | Bottom plate regulation of charge pumps |
US7586363B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Diode connected regulation of charge pumps |
US7586362B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Low voltage charge pump with regulation |
US20090302930A1 (en) * | 2008-06-09 | 2009-12-10 | Feng Pan | Charge Pump with Vt Cancellation Through Parallel Structure |
US7969235B2 (en) | 2008-06-09 | 2011-06-28 | Sandisk Corporation | Self-adaptive multi-stage charge pump |
DE102008029409A1 (de) | 2008-06-23 | 2009-12-24 | Atmel Automotive Gmbh | Schaltung mit einer geregelten Ladungspumpe |
US8710907B2 (en) * | 2008-06-24 | 2014-04-29 | Sandisk Technologies Inc. | Clock generator circuit for a charge pump |
US7683700B2 (en) | 2008-06-25 | 2010-03-23 | Sandisk Corporation | Techniques of ripple reduction for charge pumps |
US8000117B2 (en) * | 2008-08-13 | 2011-08-16 | Intersil Americas Inc. | Buck boost function based on a capacitor bootstrap input buck converter |
US7795952B2 (en) * | 2008-12-17 | 2010-09-14 | Sandisk Corporation | Regulation of recovery rates in charge pumps |
US8369115B2 (en) * | 2009-06-16 | 2013-02-05 | Greenliant Llc | Time domain voltage step down capacitor based circuit |
US9058761B2 (en) * | 2009-06-30 | 2015-06-16 | Silicon Laboratories Inc. | System and method for LCD loop control |
US7973592B2 (en) * | 2009-07-21 | 2011-07-05 | Sandisk Corporation | Charge pump with current based regulation |
US8339183B2 (en) * | 2009-07-24 | 2012-12-25 | Sandisk Technologies Inc. | Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories |
US7969232B2 (en) * | 2009-08-31 | 2011-06-28 | Himax Technologies Limited | Booster and voltage detection method thereof |
US20110133820A1 (en) * | 2009-12-09 | 2011-06-09 | Feng Pan | Multi-Stage Charge Pump with Variable Number of Boosting Stages |
US20110148509A1 (en) * | 2009-12-17 | 2011-06-23 | Feng Pan | Techniques to Reduce Charge Pump Overshoot |
US8294509B2 (en) | 2010-12-20 | 2012-10-23 | Sandisk Technologies Inc. | Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances |
US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
US8699247B2 (en) | 2011-09-09 | 2014-04-15 | Sandisk Technologies Inc. | Charge pump system dynamically reconfigurable for read and program |
US8514628B2 (en) | 2011-09-22 | 2013-08-20 | Sandisk Technologies Inc. | Dynamic switching approach to reduce area and power consumption of high voltage charge pumps |
US8400212B1 (en) | 2011-09-22 | 2013-03-19 | Sandisk Technologies Inc. | High voltage charge pump regulation system with fine step adjustment |
US8710909B2 (en) | 2012-09-14 | 2014-04-29 | Sandisk Technologies Inc. | Circuits for prevention of reverse leakage in Vth-cancellation charge pumps |
KR20140078986A (ko) * | 2012-12-18 | 2014-06-26 | 에스케이하이닉스 주식회사 | 레귤레이터, 전압 발생기, 반도체 메모리 장치 및 전압 발생 방법 |
US8836412B2 (en) | 2013-02-11 | 2014-09-16 | Sandisk 3D Llc | Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple |
US8981835B2 (en) | 2013-06-18 | 2015-03-17 | Sandisk Technologies Inc. | Efficient voltage doubler |
US9024680B2 (en) | 2013-06-24 | 2015-05-05 | Sandisk Technologies Inc. | Efficiency for charge pumps with low supply voltages |
US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
US9007046B2 (en) | 2013-06-27 | 2015-04-14 | Sandisk Technologies Inc. | Efficient high voltage bias regulation circuit |
US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
US9154027B2 (en) | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
US8917136B1 (en) * | 2014-01-10 | 2014-12-23 | Freescale Semiconductor, Inc. | Charge pump system and method of operation |
US9703303B2 (en) * | 2014-04-25 | 2017-07-11 | Nxp Usa, Inc. | Charge pump LDO with secondary sensing for low power need based refresh |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
TWI550380B (zh) * | 2015-12-21 | 2016-09-21 | 新唐科技股份有限公司 | 用於能量採集設備之功率最佳化裝置及方法 |
CN111370038B (zh) * | 2018-12-25 | 2022-05-10 | 北京兆易创新科技股份有限公司 | 一种控制漏端电压的电路 |
US10802523B2 (en) * | 2019-03-07 | 2020-10-13 | Semiconductor Components Industries, Llc | System and method for controlling a low-dropout regulator |
EP4116794A4 (de) * | 2020-04-20 | 2023-05-03 | Huawei Technologies Co., Ltd. | Spannungsregelungsschaltung und -verfahren, betriebssystem und integriertes modul und schaltung |
KR20210133359A (ko) * | 2020-04-28 | 2021-11-08 | 삼성디스플레이 주식회사 | 전원 전압 생성부, 이를 포함하는 표시 장치 및 이를 이용한 전원 전압 생성 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681180B1 (fr) * | 1991-09-05 | 1996-10-25 | Gemplus Card Int | Circuit de regulation de tension de programmation, pour memoires programmables. |
FR2719135B1 (fr) * | 1994-04-21 | 1996-06-28 | Sgs Thomson Microelectronics | Circuit de limitation de tension avec comparateur à hystérésis. |
US5946258A (en) * | 1998-03-16 | 1999-08-31 | Intel Corporation | Pump supply self regulation for flash memory cell pair reference circuit |
US6278316B1 (en) * | 1998-07-30 | 2001-08-21 | Kabushiki Kaisha Toshiba | Pump circuit with reset circuitry |
US6229385B1 (en) * | 1999-01-29 | 2001-05-08 | Linear Technology Corporation | Control feature for IC without using a dedicated pin |
-
2000
- 2000-08-22 DE DE60028030T patent/DE60028030T2/de not_active Expired - Lifetime
- 2000-08-22 EP EP00830586A patent/EP1184962B1/de not_active Expired - Lifetime
-
2001
- 2001-08-21 US US09/935,056 patent/US6518830B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1184962A1 (de) | 2002-03-06 |
US20020070794A1 (en) | 2002-06-13 |
EP1184962B1 (de) | 2006-05-17 |
DE60028030T2 (de) | 2006-12-14 |
US6518830B2 (en) | 2003-02-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |