DE60019808D1 - Kern eines leistungsverstärkers - Google Patents

Kern eines leistungsverstärkers

Info

Publication number
DE60019808D1
DE60019808D1 DE60019808T DE60019808T DE60019808D1 DE 60019808 D1 DE60019808 D1 DE 60019808D1 DE 60019808 T DE60019808 T DE 60019808T DE 60019808 T DE60019808 T DE 60019808T DE 60019808 D1 DE60019808 D1 DE 60019808D1
Authority
DE
Germany
Prior art keywords
fet
bias
power amplifier
amplifier core
core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60019808T
Other languages
English (en)
Other versions
DE60019808T2 (de
Inventor
L Seely
F Kielmeyer
L Fraser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Mobility LLC
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE60019808D1 publication Critical patent/DE60019808D1/de
Publication of DE60019808T2 publication Critical patent/DE60019808T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0283—Reducing the number of DC-current paths
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
    • H03F3/423—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE60019808T 1999-12-10 2000-10-17 Kern eines leistungsverstärkers Expired - Lifetime DE60019808T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US458286 1983-01-17
US09/458,286 US6300835B1 (en) 1999-12-10 1999-12-10 Power amplifier core
PCT/US2000/028714 WO2001043280A1 (en) 1999-12-10 2000-10-17 Power amplifier core

Publications (2)

Publication Number Publication Date
DE60019808D1 true DE60019808D1 (de) 2005-06-02
DE60019808T2 DE60019808T2 (de) 2005-11-17

Family

ID=23820169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019808T Expired - Lifetime DE60019808T2 (de) 1999-12-10 2000-10-17 Kern eines leistungsverstärkers

Country Status (8)

Country Link
US (1) US6300835B1 (de)
EP (1) EP1247337B1 (de)
JP (1) JP2003516690A (de)
CN (1) CN1391724A (de)
AT (1) ATE294462T1 (de)
AU (1) AU1092701A (de)
DE (1) DE60019808T2 (de)
WO (1) WO2001043280A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657491B2 (en) * 2001-08-15 2003-12-02 Broadcom Corporation System and method for activating gain stages in an amplification module
US7034619B2 (en) * 2003-09-17 2006-04-25 Raytheon Company Monolithic array amplifier with periodic bias-line bypassing structure and method
WO2006054148A1 (en) * 2004-11-16 2006-05-26 Acco An integrated ultra-wideband (uwb) pulse generator
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
EP1935026A1 (de) 2005-10-12 2008-06-25 Acco Feldeffekttransistor mit isoliertem gate mit einem dummie-gate
CN100429869C (zh) * 2006-03-20 2008-10-29 哈尔滨工业大学 超宽带微波单片集成放大器
US7471154B2 (en) * 2006-08-08 2008-12-30 Skyworks Solutions, Inc. Bias circuit for maintaining high linearity at cutback power conditions
US7609115B2 (en) * 2007-09-07 2009-10-27 Raytheon Company Input circuitry for transistor power amplifier and method for designing such circuitry
US7969243B2 (en) 2009-04-22 2011-06-28 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US8928410B2 (en) 2008-02-13 2015-01-06 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US7863645B2 (en) * 2008-02-13 2011-01-04 ACCO Semiconductor Inc. High breakdown voltage double-gate semiconductor device
JP2009260929A (ja) * 2008-03-28 2009-11-05 Nec Electronics Corp スプリッタ回路
US7808415B1 (en) * 2009-03-25 2010-10-05 Acco Semiconductor, Inc. Sigma-delta modulator including truncation and applications thereof
US7952431B2 (en) * 2009-08-28 2011-05-31 Acco Semiconductor, Inc. Linearization circuits and methods for power amplification
GB2479182B (en) 2010-03-31 2015-04-01 Sony Europe Ltd Power amplifier
US8532584B2 (en) 2010-04-30 2013-09-10 Acco Semiconductor, Inc. RF switches
US9491821B2 (en) * 2014-02-17 2016-11-08 Peter W. Shackle AC-powered LED light engine
US9438223B2 (en) * 2014-05-20 2016-09-06 Qualcomm Incorporated Transistor based switch stack having filters for preserving AC equipotential nodes
JP2019508955A (ja) * 2016-02-04 2019-03-28 フラウンホーファ−ゲゼルシャフト ツァー フォルデルング デア アンゲバンデン フォルシュンク エー． ファオ．Ｆｒａｕｎｈｏｆｅｒ−Ｇｅｓｅｌｌｓｃｈａｆｔ Ｚｕｒ Ｆｏｒｄｅｒｕｎｇ Ｄｅｒ Ａｎｇｅｗａｎｄｔｅｎ Ｆｏｒｓｃｈｕｎｇ Ｅ． Ｖ． マトリックス電力増幅器
TWI727034B (zh) * 2016-06-24 2021-05-11 日商東京計器股份有限公司 增幅裝置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054134A (de) * 1964-02-28
US3603892A (en) * 1969-10-10 1971-09-07 John E Guisinger High voltage transistor amplifier with constant current load
US4241316A (en) * 1979-01-18 1980-12-23 Lawrence Kavanau Field effect transconductance amplifiers
FR2536224A1 (fr) * 1982-11-17 1984-05-18 Sodern Amplificateur videofrequence
US5324682A (en) 1993-04-29 1994-06-28 Texas Instruments Incorporated Method of making an integrated circuit capable of low-noise and high-power microwave operation
JP2581452B2 (ja) 1994-06-06 1997-02-12 日本電気株式会社 電界効果トランジスタ
FR2727570B1 (fr) 1994-11-25 1997-01-24 Thomson Csf Amplificateur hyperfrequence monolithique haute integration, a topologie distribuee arborescente
US5568086A (en) 1995-05-25 1996-10-22 Motorola, Inc. Linear power amplifier for high efficiency multi-carrier performance
US5659267A (en) 1995-11-03 1997-08-19 Motorola, Inc. High gain K-band power amplifier with unconditionally stable MMIC FET cells
US5739723A (en) 1995-12-04 1998-04-14 Motorola, Inc. Linear power amplifier using active bias for high efficiency and method thereof
US5712593A (en) 1996-02-05 1998-01-27 Motorola, Inc. Linear power amplifier with distortion detection
FR2744578B1 (fr) 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
US5694498A (en) 1996-08-16 1997-12-02 Waveband Corporation Optically controlled phase shifter and phased array antenna for use therewith
US5859567A (en) 1996-09-24 1999-01-12 Motorola, Inc. Power amplifier circuit with temperature compensating level shifter
US5834975A (en) 1997-03-12 1998-11-10 Rockwell Science Center, Llc Integrated variable gain power amplifier and method
US5880633A (en) 1997-05-08 1999-03-09 Motorola, Inc. High efficiency power amplifier
US5952886A (en) 1998-01-20 1999-09-14 Motorola, Inc. MMIC power amplifier with diagonal circuitry

Also Published As

Publication number Publication date
DE60019808T2 (de) 2005-11-17
EP1247337B1 (de) 2005-04-27
JP2003516690A (ja) 2003-05-13
WO2001043280A1 (en) 2001-06-14
AU1092701A (en) 2001-06-18
US6300835B1 (en) 2001-10-09
EP1247337A1 (de) 2002-10-09
CN1391724A (zh) 2003-01-15
ATE294462T1 (de) 2005-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8370 Indication related to discontinuation of the patent is to be deleted
8327 Change in the person/name/address of the patent owner

Owner name: MOTOROLA MOBILITY, INC. ( N.D. GES. D. STAATES, US