DE60019660D1 - Verfahren zum Aufbringen einer Sperrschicht - Google Patents

Verfahren zum Aufbringen einer Sperrschicht

Info

Publication number
DE60019660D1
DE60019660D1 DE60019660T DE60019660T DE60019660D1 DE 60019660 D1 DE60019660 D1 DE 60019660D1 DE 60019660 T DE60019660 T DE 60019660T DE 60019660 T DE60019660 T DE 60019660T DE 60019660 D1 DE60019660 D1 DE 60019660D1
Authority
DE
Germany
Prior art keywords
applying
barrier layer
barrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60019660T
Other languages
English (en)
Other versions
DE60019660T2 (de
Inventor
Masamichi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03804199A external-priority patent/JP4009034B2/ja
Priority claimed from JP19202699A external-priority patent/JP3938450B2/ja
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE60019660D1 publication Critical patent/DE60019660D1/de
Publication of DE60019660T2 publication Critical patent/DE60019660T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
DE60019660T 1999-02-17 2000-02-15 Verfahren zum Aufbringen einer Sperrschicht Expired - Lifetime DE60019660T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3804199 1999-02-17
JP03804199A JP4009034B2 (ja) 1999-02-17 1999-02-17 バリア膜製造方法
JP19202699A JP3938450B2 (ja) 1999-07-06 1999-07-06 バリア膜製造方法
JP19202699 1999-07-06

Publications (2)

Publication Number Publication Date
DE60019660D1 true DE60019660D1 (de) 2005-06-02
DE60019660T2 DE60019660T2 (de) 2006-01-19

Family

ID=26377222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019660T Expired - Lifetime DE60019660T2 (de) 1999-02-17 2000-02-15 Verfahren zum Aufbringen einer Sperrschicht

Country Status (5)

Country Link
US (2) US6743718B1 (de)
EP (1) EP1029943B1 (de)
KR (1) KR100773280B1 (de)
DE (1) DE60019660T2 (de)
TW (1) TW451357B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1473761A1 (de) * 2003-05-02 2004-11-03 Air Products And Chemicals, Inc. Verfahren zum Herstellen einer Metalldünnschicht
US7311946B2 (en) 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
JP2007165788A (ja) * 2005-12-16 2007-06-28 Tokyo Electron Ltd 金属系膜の脱炭素処理方法、成膜方法および半導体装置の製造方法
KR101059709B1 (ko) * 2006-07-14 2011-08-29 가부시키가이샤 알박 반도체 장치의 제조 방법
US20090032949A1 (en) * 2007-08-02 2009-02-05 Micron Technology, Inc. Method of depositing Tungsten using plasma-treated tungsten nitride
JP2009147137A (ja) * 2007-12-14 2009-07-02 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3522427A1 (de) * 1985-06-22 1986-02-20 Helmut Dipl Ing Fischer Titanoxinitridschicht fuer sensoranwendungen
US5196360A (en) * 1990-10-02 1993-03-23 Micron Technologies, Inc. Methods for inhibiting outgrowth of silicide in self-aligned silicide process
KR930011538B1 (ko) * 1991-07-16 1993-12-10 한국과학기술연구원 실리콘 반도체소자의 금속배선 형성용 텅스텐 질화박막 증착방법
DE69216747T2 (de) * 1991-10-07 1997-07-31 Sumitomo Metal Ind Verfahren zur Bildung eines dünnen Films
US5635763A (en) * 1993-03-22 1997-06-03 Sanyo Electric Co., Ltd. Semiconductor device having cap-metal layer
JP3328358B2 (ja) * 1993-03-26 2002-09-24 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6251758B1 (en) * 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
EP0742847B1 (de) * 1994-11-30 2000-05-24 Micron Technology, Inc. Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases
US5780908A (en) * 1995-05-09 1998-07-14 Matsushita Electric Industrial Co., Ltd. Semiconductor apparatus with tungstein nitride
US5686761A (en) * 1995-06-06 1997-11-11 Advanced Micro Devices, Inc. Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology
US5736192A (en) * 1995-07-05 1998-04-07 Fujitsu Limited Embedded electroconductive layer and method for formation thereof
US5923999A (en) * 1996-10-29 1999-07-13 International Business Machines Corporation Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device
TW365685B (en) * 1996-10-31 1999-08-01 Texas Instruments Inc Low-temperature processes for depositing barrier films containing tungsten and nitrogen
JP3220034B2 (ja) * 1996-12-26 2001-10-22 株式会社東芝 半導体装置及びその製造方法
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
JP2930102B2 (ja) * 1997-01-31 1999-08-03 日本電気株式会社 半導体装置用配線構造及びその製造方法
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
US5919531A (en) * 1997-03-26 1999-07-06 Gelest, Inc. Tantalum and tantalum-based films and methods of making the same
US5935648A (en) * 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
US5893731A (en) * 1997-05-23 1999-04-13 Industrial Technology Research Institute Method for fabricating low cost integrated resistor capacitor combinations
US5910880A (en) * 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6100184A (en) * 1997-08-20 2000-08-08 Sematech, Inc. Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
US20010046021A1 (en) * 1997-08-28 2001-11-29 Takeshi Kozuka A conductive particle to conductively bond conductive members to each other, an anisotropic adhesive containing the conductive particle, a liquid crystal display device using the anisotropic conductive adhesive, a method for manufacturing the liquid crystal display device
US5990011A (en) * 1997-09-18 1999-11-23 Micron Technology, Inc. Titanium aluminum alloy wetting layer for improved aluminum filling of damescene trenches
US6235632B1 (en) * 1998-01-13 2001-05-22 Advanced Micro Devices, Inc. Tungsten plug formation
US6147405A (en) * 1998-02-19 2000-11-14 Micron Technology, Inc. Asymmetric, double-sided self-aligned silicide and method of forming the same
US6025259A (en) * 1998-07-02 2000-02-15 Advanced Micro Devices, Inc. Dual damascene process using high selectivity boundary layers
US5985753A (en) * 1998-08-19 1999-11-16 Advanced Micro Devices, Inc. Method to manufacture dual damascene using a phantom implant mask
US6495200B1 (en) * 1998-12-07 2002-12-17 Chartered Semiconductor Manufacturing Ltd. Method to deposit a seeding layer for electroless copper plating
US6093638A (en) * 1998-12-10 2000-07-25 Texas Instruments Incorporated Method of forming an electrical contact in a substrate
US6140231A (en) * 1999-02-12 2000-10-31 Taiwan Semiconductor Manufacturing Company Robust diffusion barrier for Cu metallization
AU3229600A (en) * 1999-02-12 2000-08-29 Gelest, Inc. Chemical vapor deposition of tungsten nitride
US6342417B2 (en) * 1999-02-16 2002-01-29 Micron Technology, Inc. Methods of forming materials comprising tungsten and nitrogen
US6399479B1 (en) * 1999-08-30 2002-06-04 Applied Materials, Inc. Processes to improve electroplating fill
US6635570B1 (en) * 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
US6503375B1 (en) * 2000-02-11 2003-01-07 Applied Materials, Inc Electroplating apparatus using a perforated phosphorus doped consumable anode

Also Published As

Publication number Publication date
EP1029943A1 (de) 2000-08-23
US6743718B1 (en) 2004-06-01
DE60019660T2 (de) 2006-01-19
KR100773280B1 (ko) 2007-11-05
US20020123215A1 (en) 2002-09-05
KR20000076639A (ko) 2000-12-26
TW451357B (en) 2001-08-21
EP1029943B1 (de) 2005-04-27

Similar Documents

Publication Publication Date Title
DE69943189D1 (de) Verfahren zum Herstellen einer Überzugsschicht
DE69735734D1 (de) Verfahren zum Auftragen einer Sperrschicht auf einem Kunststoffsubstrat
DE69828732D1 (de) Verfahren zum Auftragen einer Haftbeschichtung für eine Wärmedämmschicht
DE60142673D1 (de) Verfahren zum Herstellen einer Wärmedämmschicht
DE10083897T1 (de) Verfahren zum Bearbeiten einer Polymerschicht
DE69707056T2 (de) Verfahren zur Reparatur einer Wärmesperrschicht
DE60013420D1 (de) Verfahren zum ringförmigen abdichten
DE69813888D1 (de) Verfahren zum auftragen ferroelektrischer dünnschichten
DE10081533D2 (de) Verfahren zum Betreiben einer Getriebevorrichtung
DE60017823D1 (de) Verfahren zum Aufbringen einer Barriereschicht auf ein siliziumhaltiges Substrat und nach diesem Verfahren hergestellter Gegenstand
DE602004000727T8 (de) Verfahren zum Aufbringen einer magnetostriktiven Beschichtung
ATE246081T1 (de) Verfahren zum verpacken
DE60113572D1 (de) Verfahren zum Auftragen einer Deckschicht auf eine poröse Unterlage
DE50103754D1 (de) Verfahren zum erkennen einer rollover-situation
DE60127517D1 (de) Verfahren zum Zusammenbauen einer Tür
DE60106817D1 (de) Verfahren zum Glätten einer stereolithographischen Kontur
DE60105830D1 (de) Verfahren zum Abtragen einer Metallschicht
DE69834785D1 (de) Elektrolytisches Verfahren zum Aufbringen einer stabilisierenden Zink-Crom-Schicht
DE59800323D1 (de) Verfahren zum steuern einer changiereinrichtung
DE10125036B8 (de) Verfahren zum Schützen einer Solarzelle
DE60039953D1 (de) Verfahren zum Aufrechterhalten einer Datenübertragungsverbindung
DE59802725D1 (de) Verfahren zum richtungsschätzen
DE60019660D1 (de) Verfahren zum Aufbringen einer Sperrschicht
ATE288609T1 (de) Verfahren zum schutz einer oberfläche
DE50104315D1 (de) Verfahren zum herstellen einer verbindungsstelle an einem fahrweg

Legal Events

Date Code Title Description
8364 No opposition during term of opposition