DE60019483D1 - Schüsselförmiger DRAM-Kondensator und Verfahren zu seiner Herstellung - Google Patents

Schüsselförmiger DRAM-Kondensator und Verfahren zu seiner Herstellung

Info

Publication number
DE60019483D1
DE60019483D1 DE60019483T DE60019483T DE60019483D1 DE 60019483 D1 DE60019483 D1 DE 60019483D1 DE 60019483 T DE60019483 T DE 60019483T DE 60019483 T DE60019483 T DE 60019483T DE 60019483 D1 DE60019483 D1 DE 60019483D1
Authority
DE
Germany
Prior art keywords
making
same
bowl shaped
dram capacitor
shaped dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60019483T
Other languages
English (en)
Inventor
Jerome Ciavatti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60019483D1 publication Critical patent/DE60019483D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE60019483T 1999-02-12 2000-02-11 Schüsselförmiger DRAM-Kondensator und Verfahren zu seiner Herstellung Expired - Lifetime DE60019483D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9901892A FR2790597B1 (fr) 1999-02-12 1999-02-12 Integration de condensateurs

Publications (1)

Publication Number Publication Date
DE60019483D1 true DE60019483D1 (de) 2005-05-25

Family

ID=9542110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019483T Expired - Lifetime DE60019483D1 (de) 1999-02-12 2000-02-11 Schüsselförmiger DRAM-Kondensator und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US6544841B1 (de)
EP (1) EP1037265B1 (de)
DE (1) DE60019483D1 (de)
FR (1) FR2790597B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2832854B1 (fr) 2001-11-28 2004-03-12 St Microelectronics Sa Fabrication de memoire dram et de transistor mos
US6784479B2 (en) * 2002-06-05 2004-08-31 Samsung Electronics Co., Ltd. Multi-layer integrated circuit capacitor electrodes
KR101959506B1 (ko) * 2012-10-26 2019-03-19 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6329027B2 (ja) * 2014-08-04 2018-05-23 ミネベアミツミ株式会社 フレキシブルプリント基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192703A (en) * 1991-10-31 1993-03-09 Micron Technology, Inc. Method of making tungsten contact core stack capacitor
JPH05218343A (ja) 1992-01-31 1993-08-27 Sony Corp 半導体装置およびその製造方法
US5338700A (en) * 1993-04-14 1994-08-16 Micron Semiconductor, Inc. Method of forming a bit line over capacitor array of memory cells
US5340765A (en) * 1993-08-13 1994-08-23 Micron Semiconductor, Inc. Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon
US5597756A (en) 1995-06-21 1997-01-28 Micron Technology, Inc. Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
US5702989A (en) * 1996-02-08 1997-12-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating a tub structured stacked capacitor for a DRAM cell having a central column
JPH10144882A (ja) * 1996-11-13 1998-05-29 Oki Electric Ind Co Ltd 半導体記憶素子のキャパシタ及びその製造方法
KR100292938B1 (ko) * 1998-07-16 2001-07-12 윤종용 고집적디램셀커패시터및그의제조방법

Also Published As

Publication number Publication date
FR2790597B1 (fr) 2003-08-15
FR2790597A1 (fr) 2000-09-08
EP1037265A1 (de) 2000-09-20
EP1037265B1 (de) 2005-04-20
US6544841B1 (en) 2003-04-08

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Legal Events

Date Code Title Description
8332 No legal effect for de