DE60019375D1 - Optischer Elektroabsorptionsmodulator und Verfahren zur dessen Herstellung - Google Patents

Optischer Elektroabsorptionsmodulator und Verfahren zur dessen Herstellung

Info

Publication number
DE60019375D1
DE60019375D1 DE60019375T DE60019375T DE60019375D1 DE 60019375 D1 DE60019375 D1 DE 60019375D1 DE 60019375 T DE60019375 T DE 60019375T DE 60019375 T DE60019375 T DE 60019375T DE 60019375 D1 DE60019375 D1 DE 60019375D1
Authority
DE
Germany
Prior art keywords
production
electroabsorption modulator
optical
optical electroabsorption
modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60019375T
Other languages
English (en)
Other versions
DE60019375T2 (de
Inventor
Junichi Shimizu
Yuji Furushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Publication of DE60019375D1 publication Critical patent/DE60019375D1/de
Application granted granted Critical
Publication of DE60019375T2 publication Critical patent/DE60019375T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE60019375T 1999-07-12 2000-07-12 Optischer Elektroabsorptionsmodulator und Verfahren zur dessen Herstellung Expired - Fee Related DE60019375T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19800899A JP3384447B2 (ja) 1999-07-12 1999-07-12 吸収型光変調器およびその製造方法
JP19800899 1999-07-12

Publications (2)

Publication Number Publication Date
DE60019375D1 true DE60019375D1 (de) 2005-05-19
DE60019375T2 DE60019375T2 (de) 2005-09-08

Family

ID=16383985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019375T Expired - Fee Related DE60019375T2 (de) 1999-07-12 2000-07-12 Optischer Elektroabsorptionsmodulator und Verfahren zur dessen Herstellung

Country Status (4)

Country Link
US (1) US6477283B1 (de)
EP (1) EP1069456B1 (de)
JP (1) JP3384447B2 (de)
DE (1) DE60019375T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10135958B4 (de) 2001-07-24 2008-05-08 Finisar Corp., Sunnyvale Elektroabsorptionsmodulator, Modulator-Laser-Vorrichtung und Verfahren zum Herstellen eines Elektroabsorptionsmodulators
US6665105B2 (en) * 2001-07-31 2003-12-16 Agility Communications, Inc. Tunable electro-absorption modulator
US7058246B2 (en) 2001-10-09 2006-06-06 Infinera Corporation Transmitter photonic integrated circuit (TxPIC) chip with enhanced power and yield without on-chip amplification
JP2003241152A (ja) * 2002-02-18 2003-08-27 Mitsubishi Electric Corp 半導体光変調器
US20050141800A1 (en) * 2002-09-17 2005-06-30 Mitsubishi Denki Kabushiki Kaisha Waveguide semiconductor optical device and process of fabricating the device
US7037739B2 (en) * 2004-01-06 2006-05-02 Korea Institute Of Science And Technology Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
US8034648B1 (en) * 2006-05-15 2011-10-11 Finisar Corporation Epitaxial regrowth in a distributed feedback laser
JP5463760B2 (ja) * 2009-07-02 2014-04-09 三菱電機株式会社 光導波路集積型半導体光素子およびその製造方法
JP6291849B2 (ja) * 2014-01-10 2018-03-14 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP6414306B2 (ja) * 2017-09-27 2018-10-31 三菱電機株式会社 半導体装置の製造方法、半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4802182A (en) * 1987-11-05 1989-01-31 Xerox Corporation Monolithic two dimensional waveguide coupled cavity laser/modulator
US5182225A (en) * 1990-01-10 1993-01-26 Microunity Systems Engineering, Inc. Process for fabricating BICMOS with hypershallow junctions
US5171713A (en) * 1990-01-10 1992-12-15 Micrunity Systems Eng Process for forming planarized, air-bridge interconnects on a semiconductor substrate
US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
JPH06222406A (ja) 1993-01-26 1994-08-12 Nippon Telegr & Teleph Corp <Ntt> 半導体光デバイス
JP3234086B2 (ja) * 1994-01-18 2001-12-04 キヤノン株式会社 光半導体デバイス及びその製造方法
US5889913A (en) * 1995-03-15 1999-03-30 Kabushiki Kaisha Toshiba Optical semiconductor device and method of fabricating the same
DE19624514C1 (de) * 1996-06-19 1997-07-17 Siemens Ag Laserdiode-Modulator-Kombination
JPH1090635A (ja) 1996-09-13 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 埋め込み型半導体光素子
GB2323450A (en) * 1997-03-20 1998-09-23 Secr Defence Optical modulator
US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation

Also Published As

Publication number Publication date
JP3384447B2 (ja) 2003-03-10
JP2001021851A (ja) 2001-01-26
US6477283B1 (en) 2002-11-05
EP1069456A3 (de) 2003-03-05
DE60019375T2 (de) 2005-09-08
EP1069456A2 (de) 2001-01-17
EP1069456B1 (de) 2005-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee