DE60012518D1 - Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung - Google Patents

Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung

Info

Publication number
DE60012518D1
DE60012518D1 DE60012518T DE60012518T DE60012518D1 DE 60012518 D1 DE60012518 D1 DE 60012518D1 DE 60012518 T DE60012518 T DE 60012518T DE 60012518 T DE60012518 T DE 60012518T DE 60012518 D1 DE60012518 D1 DE 60012518D1
Authority
DE
Germany
Prior art keywords
establishment
self
double damascene
adjusted double
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60012518T
Other languages
English (en)
Other versions
DE60012518T2 (de
Inventor
Alain Charles
Karl Mautz
John Maltabes
Joe Petrucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE60012518D1 publication Critical patent/DE60012518D1/de
Publication of DE60012518T2 publication Critical patent/DE60012518T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE2000612518 2000-08-30 2000-08-30 Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung Expired - Fee Related DE60012518T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20000118804 EP1184903B1 (de) 2000-08-30 2000-08-30 Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung

Publications (2)

Publication Number Publication Date
DE60012518D1 true DE60012518D1 (de) 2004-09-02
DE60012518T2 DE60012518T2 (de) 2005-07-28

Family

ID=8169698

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000612518 Expired - Fee Related DE60012518T2 (de) 2000-08-30 2000-08-30 Herstellung einer selbst-justierten Doppel-Damaszener-Verbindung

Country Status (4)

Country Link
EP (1) EP1184903B1 (de)
DE (1) DE60012518T2 (de)
TW (1) TW507324B (de)
WO (1) WO2002019417A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7119010B2 (en) * 2002-04-23 2006-10-10 Chartered Semiconductor Manfacturing Ltd. Integrated circuit with self-aligned line and via and manufacturing method therefor
DE10240099A1 (de) 2002-08-30 2004-03-11 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur
JP5488603B2 (ja) 2009-08-14 2014-05-14 富士通セミコンダクター株式会社 半導体装置の製造方法
TWI502627B (zh) * 2013-06-03 2015-10-01 Winbond Electronics Corp 溝槽之製造方法
CN104241189B (zh) * 2013-06-13 2017-09-26 华邦电子股份有限公司 沟槽的制造方法
US9418886B1 (en) * 2015-07-24 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming conductive features

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2738682B2 (ja) * 1987-04-28 1998-04-08 松下電器産業株式会社 配線形成方法
US5614765A (en) * 1995-06-07 1997-03-25 Advanced Micro Devices, Inc. Self aligned via dual damascene
KR0179292B1 (ko) * 1996-04-12 1999-04-15 문정환 반도체소자의 다층배선 형성방법
US5933761A (en) * 1998-02-09 1999-08-03 Lee; Ellis Dual damascene structure and its manufacturing method
TW410455B (en) * 1998-02-16 2000-11-01 United Microelectronics Corp Forming method for dual damascene structure

Also Published As

Publication number Publication date
WO2002019417A1 (en) 2002-03-07
DE60012518T2 (de) 2005-07-28
EP1184903B1 (de) 2004-07-28
TW507324B (en) 2002-10-21
EP1184903A1 (de) 2002-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee