DE50203296D1 - Bipolar-transistor und verfahren zum herstellen desselben - Google Patents
Bipolar-transistor und verfahren zum herstellen desselbenInfo
- Publication number
- DE50203296D1 DE50203296D1 DE50203296T DE50203296T DE50203296D1 DE 50203296 D1 DE50203296 D1 DE 50203296D1 DE 50203296 T DE50203296 T DE 50203296T DE 50203296 T DE50203296 T DE 50203296T DE 50203296 D1 DE50203296 D1 DE 50203296D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE50203296T DE50203296D1 (de) | 2001-12-04 | 2002-10-11 | Bipolar-transistor und verfahren zum herstellen desselben |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10159414A DE10159414A1 (de) | 2001-12-04 | 2001-12-04 | Bipolar-Transistor und Verfahren zum Herstellen desselben |
| DE50203296T DE50203296D1 (de) | 2001-12-04 | 2002-10-11 | Bipolar-transistor und verfahren zum herstellen desselben |
| PCT/EP2002/011427 WO2003049192A1 (de) | 2001-12-04 | 2002-10-11 | Bipolar-transistor und verfahren zum herstellen desselben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE50203296D1 true DE50203296D1 (de) | 2005-07-07 |
Family
ID=7707913
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10159414A Withdrawn DE10159414A1 (de) | 2001-12-04 | 2001-12-04 | Bipolar-Transistor und Verfahren zum Herstellen desselben |
| DE50203296T Expired - Lifetime DE50203296D1 (de) | 2001-12-04 | 2002-10-11 | Bipolar-transistor und verfahren zum herstellen desselben |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10159414A Withdrawn DE10159414A1 (de) | 2001-12-04 | 2001-12-04 | Bipolar-Transistor und Verfahren zum Herstellen desselben |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7141479B2 (de) |
| EP (1) | EP1436842B1 (de) |
| AU (1) | AU2002340557A1 (de) |
| DE (2) | DE10159414A1 (de) |
| WO (1) | WO2003049192A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2868203B1 (fr) * | 2004-03-29 | 2006-06-09 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire a base extrinseque monocristalline |
| FR2868206A1 (fr) * | 2004-03-29 | 2005-09-30 | St Microelectronics Sa | Transistor bipolaire a base extrinseque monocristalline isolee du collecteur |
| US20070102789A1 (en) * | 2005-11-09 | 2007-05-10 | International Business Machines Corporation | Bipolar transistor and back-gated transistor structure and method |
| KR100832716B1 (ko) * | 2006-12-27 | 2008-05-28 | 동부일렉트로닉스 주식회사 | 바이폴라 트랜지스터 및 그 제조방법 |
| KR100879886B1 (ko) | 2007-08-24 | 2009-01-22 | 주식회사 동부하이텍 | 반도체소자 및 그 제조방법 |
| CN101925364B (zh) | 2007-11-27 | 2014-04-30 | 不列颠哥伦比亚大学 | 用于预防和治疗关节炎的14-3-3拮抗剂 |
| FR2989514A1 (fr) | 2012-04-11 | 2013-10-18 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire |
| US9343569B2 (en) * | 2014-05-21 | 2016-05-17 | International Business Machines Corporation | Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
| EP0287318B1 (de) * | 1987-04-14 | 1995-03-15 | Fairchild Semiconductor Corporation | Integrierter Transistor und sein Herstellungsverfahren |
| US5134454A (en) * | 1990-09-26 | 1992-07-28 | Purdue Research Foundation | Self-aligned integrated circuit bipolar transistor having monocrystalline contacts |
| US5273921A (en) * | 1991-12-27 | 1993-12-28 | Purdue Research Foundation | Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
| JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
| JP2630237B2 (ja) * | 1993-12-22 | 1997-07-16 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR100275544B1 (ko) * | 1995-12-20 | 2001-01-15 | 이계철 | 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법 |
| FR2756100B1 (fr) * | 1996-11-19 | 1999-02-12 | Sgs Thomson Microelectronics | Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos |
| KR100307183B1 (ko) * | 1999-09-07 | 2001-11-05 | 염병렬 | 바이폴라 소자 및 그 제조 방법 |
| EP1152462A1 (de) * | 2000-05-05 | 2001-11-07 | Infineon Technologies AG | Verfahren zur Herstellung eines Bipolartransistors |
-
2001
- 2001-12-04 DE DE10159414A patent/DE10159414A1/de not_active Withdrawn
-
2002
- 2002-10-11 WO PCT/EP2002/011427 patent/WO2003049192A1/de not_active Application Discontinuation
- 2002-10-11 DE DE50203296T patent/DE50203296D1/de not_active Expired - Lifetime
- 2002-10-11 EP EP02774707A patent/EP1436842B1/de not_active Expired - Fee Related
- 2002-10-11 AU AU2002340557A patent/AU2002340557A1/en not_active Abandoned
-
2004
- 2004-06-04 US US10/862,012 patent/US7141479B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1436842B1 (de) | 2005-06-01 |
| US7141479B2 (en) | 2006-11-28 |
| DE10159414A1 (de) | 2003-06-18 |
| US20050020023A1 (en) | 2005-01-27 |
| WO2003049192A1 (de) | 2003-06-12 |
| AU2002340557A1 (en) | 2003-06-17 |
| EP1436842A1 (de) | 2004-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |