DE452924T1 - Effusionsdampfquelle fuer epitaxieausscheidung. - Google Patents

Effusionsdampfquelle fuer epitaxieausscheidung.

Info

Publication number
DE452924T1
DE452924T1 DE199191106216T DE91106216T DE452924T1 DE 452924 T1 DE452924 T1 DE 452924T1 DE 199191106216 T DE199191106216 T DE 199191106216T DE 91106216 T DE91106216 T DE 91106216T DE 452924 T1 DE452924 T1 DE 452924T1
Authority
DE
Germany
Prior art keywords
effusion
epitaxy
elimination
vapor source
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE199191106216T
Other languages
English (en)
Inventor
Fernando Pianezza Genova (To), It
Giuliana Torino It Morello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSELT-CENTRO STUDI E LABORATORI TELECOMUNICAZIONI SpA TURIN/TORINO IT
Original Assignee
CSELT-CENTRO STUDI E LABORATORI TELECOMUNICAZIONI SpA TURIN/TORINO IT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSELT-CENTRO STUDI E LABORATORI TELECOMUNICAZIONI SpA TURIN/TORINO IT filed Critical CSELT-CENTRO STUDI E LABORATORI TELECOMUNICAZIONI SpA TURIN/TORINO IT
Publication of DE452924T1 publication Critical patent/DE452924T1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE199191106216T 1990-04-19 1991-04-18 Effusionsdampfquelle fuer epitaxieausscheidung. Pending DE452924T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT67289A IT1240199B (it) 1990-04-19 1990-04-19 Effusore di vapori per impianti di deposizione epitassiale.

Publications (1)

Publication Number Publication Date
DE452924T1 true DE452924T1 (de) 1992-04-09

Family

ID=11301182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE199191106216T Pending DE452924T1 (de) 1990-04-19 1991-04-18 Effusionsdampfquelle fuer epitaxieausscheidung.

Country Status (6)

Country Link
US (1) US5128538A (de)
EP (1) EP0452924A1 (de)
JP (1) JPH04228494A (de)
CA (1) CA2039913A1 (de)
DE (1) DE452924T1 (de)
IT (1) IT1240199B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2679929B1 (fr) * 1991-08-01 1993-10-22 Alcatel Alsthom Cie Gle Electric Procede et cellule d'effusion pour la formation de jets moleculaires.
SG125069A1 (en) * 2001-05-17 2006-09-29 Sumitomo Chemical Co Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor
WO2011065998A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
CN115477366B (zh) * 2022-10-20 2023-11-28 重庆海通环保科技有限公司 一种抗污染反渗透膜装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
CH654596A5 (de) * 1983-09-05 1986-02-28 Balzers Hochvakuum Verdampferzelle.
GB2158843A (en) * 1984-05-14 1985-11-20 Philips Electronic Associated Method of manufacturing a semiconductor device by molecular beam epitaxy
US4789779A (en) * 1984-08-01 1988-12-06 The United States Of America As Represented By The Secretary Of Commerce Heat pipe oven molecular beam source
JPH01224295A (ja) * 1988-03-02 1989-09-07 Fujitsu Ltd ガスソース分子線結晶成長装置
EP0386247A4 (en) * 1988-05-31 1990-12-05 Kievsky Politekhnichesky Institut Imeni 50-Letia Velikoi Oktyabrskoi Sotsialisticheskoi Revoljutsii Device for vacuum deposition of films

Also Published As

Publication number Publication date
EP0452924A1 (de) 1991-10-23
IT1240199B (it) 1993-11-27
CA2039913A1 (en) 1991-10-16
JPH04228494A (ja) 1992-08-18
US5128538A (en) 1992-07-07
IT9067289A0 (it) 1990-04-19
IT9067289A1 (it) 1991-10-19

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