IT9067289A0 - Effusore di vapori per impianti di deposizione epitessiale - Google Patents

Effusore di vapori per impianti di deposizione epitessiale

Info

Publication number
IT9067289A0
IT9067289A0 IT9067289A IT6728990A IT9067289A0 IT 9067289 A0 IT9067289 A0 IT 9067289A0 IT 9067289 A IT9067289 A IT 9067289A IT 6728990 A IT6728990 A IT 6728990A IT 9067289 A0 IT9067289 A0 IT 9067289A0
Authority
IT
Italy
Prior art keywords
epithessial
effusor
steam
deposition systems
deposition
Prior art date
Application number
IT9067289A
Other languages
English (en)
Other versions
IT9067289A1 (it
IT1240199B (it
Inventor
Fernando Genova
Giuliana Morello
Original Assignee
Cselt Centro Studi Lab Telecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cselt Centro Studi Lab Telecom filed Critical Cselt Centro Studi Lab Telecom
Priority to IT67289A priority Critical patent/IT1240199B/it
Publication of IT9067289A0 publication Critical patent/IT9067289A0/it
Priority to US07/679,540 priority patent/US5128538A/en
Priority to CA002039913A priority patent/CA2039913A1/en
Priority to JP3103465A priority patent/JPH04228494A/ja
Priority to EP91106216A priority patent/EP0452924A1/en
Priority to DE199191106216T priority patent/DE452924T1/de
Publication of IT9067289A1 publication Critical patent/IT9067289A1/it
Application granted granted Critical
Publication of IT1240199B publication Critical patent/IT1240199B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT67289A 1990-04-15 1990-04-19 Effusore di vapori per impianti di deposizione epitassiale. IT1240199B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT67289A IT1240199B (it) 1990-04-19 1990-04-19 Effusore di vapori per impianti di deposizione epitassiale.
US07/679,540 US5128538A (en) 1990-04-19 1991-04-02 Vapor effusion source for epitaxial deposition plants
CA002039913A CA2039913A1 (en) 1990-04-15 1991-04-05 Vapour effusion source for epitaxial deposition plants
JP3103465A JPH04228494A (ja) 1990-04-19 1991-04-09 エピタキシャル析出設備のための蒸気噴出源
EP91106216A EP0452924A1 (en) 1990-04-19 1991-04-18 A vapour effusion source for epitaxial deposition
DE199191106216T DE452924T1 (de) 1990-04-19 1991-04-18 Effusionsdampfquelle fuer epitaxieausscheidung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT67289A IT1240199B (it) 1990-04-19 1990-04-19 Effusore di vapori per impianti di deposizione epitassiale.

Publications (3)

Publication Number Publication Date
IT9067289A0 true IT9067289A0 (it) 1990-04-19
IT9067289A1 IT9067289A1 (it) 1991-10-19
IT1240199B IT1240199B (it) 1993-11-27

Family

ID=11301182

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67289A IT1240199B (it) 1990-04-15 1990-04-19 Effusore di vapori per impianti di deposizione epitassiale.

Country Status (6)

Country Link
US (1) US5128538A (it)
EP (1) EP0452924A1 (it)
JP (1) JPH04228494A (it)
CA (1) CA2039913A1 (it)
DE (1) DE452924T1 (it)
IT (1) IT1240199B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115477366A (zh) * 2022-10-20 2022-12-16 重庆海通环保科技有限公司 一种抗污染反渗透膜装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2679929B1 (fr) * 1991-08-01 1993-10-22 Alcatel Alsthom Cie Gle Electric Procede et cellule d'effusion pour la formation de jets moleculaires.
SG125069A1 (en) * 2001-05-17 2006-09-29 Sumitomo Chemical Co Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
CH654596A5 (de) * 1983-09-05 1986-02-28 Balzers Hochvakuum Verdampferzelle.
GB2158843A (en) * 1984-05-14 1985-11-20 Philips Electronic Associated Method of manufacturing a semiconductor device by molecular beam epitaxy
US4789779A (en) * 1984-08-01 1988-12-06 The United States Of America As Represented By The Secretary Of Commerce Heat pipe oven molecular beam source
JPH01224295A (ja) * 1988-03-02 1989-09-07 Fujitsu Ltd ガスソース分子線結晶成長装置
EP0386247A4 (en) * 1988-05-31 1990-12-05 Kievsky Politekhnichesky Institut Imeni 50-Letia Velikoi Oktyabrskoi Sotsialisticheskoi Revoljutsii Device for vacuum deposition of films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115477366A (zh) * 2022-10-20 2022-12-16 重庆海通环保科技有限公司 一种抗污染反渗透膜装置

Also Published As

Publication number Publication date
JPH04228494A (ja) 1992-08-18
IT9067289A1 (it) 1991-10-19
CA2039913A1 (en) 1991-10-16
US5128538A (en) 1992-07-07
IT1240199B (it) 1993-11-27
DE452924T1 (de) 1992-04-09
EP0452924A1 (en) 1991-10-23

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19930405