DE4003377C1 - - Google Patents

Info

Publication number
DE4003377C1
DE4003377C1 DE4003377A DE4003377A DE4003377C1 DE 4003377 C1 DE4003377 C1 DE 4003377C1 DE 4003377 A DE4003377 A DE 4003377A DE 4003377 A DE4003377 A DE 4003377A DE 4003377 C1 DE4003377 C1 DE 4003377C1
Authority
DE
Germany
Prior art keywords
container
inner container
buffer space
annular gap
alkali solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4003377A
Other languages
German (de)
English (en)
Inventor
Kotaro Chiba
Motohide Hatanaka
Masayuki Muroran Hokkaido Jp Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Application granted granted Critical
Publication of DE4003377C1 publication Critical patent/DE4003377C1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B01J3/046—Pressure-balanced vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE4003377A 1988-08-05 1990-02-05 Expired - Lifetime DE4003377C1 (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63194338A JPH0722692B2 (ja) 1988-08-05 1988-08-05 水熱合成用容器
CN90101411.7A CN1022335C (zh) 1988-08-05 1990-02-03 水热合成用容器

Publications (1)

Publication Number Publication Date
DE4003377C1 true DE4003377C1 (OSRAM) 1991-08-08

Family

ID=36754727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4003377A Expired - Lifetime DE4003377C1 (OSRAM) 1988-08-05 1990-02-05

Country Status (3)

Country Link
JP (1) JPH0722692B2 (OSRAM)
CN (1) CN1022335C (OSRAM)
DE (1) DE4003377C1 (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229468A1 (de) * 1992-09-03 1994-03-10 Streitenberg Hubert Dr Med Behälter für flüssige oder pastöse Inhaltsstoffe
WO1996002471A1 (en) * 1994-07-13 1996-02-01 Rpc Waste Management Services, Inc. Doing Business As Eco Waste Technologies Turbulent flow cold-wall reactor
EP0860182A3 (en) * 1997-02-19 2001-12-05 Hitachi, Ltd. Oxidation processing method, and apparatus and process vessel using the method
US6958122B1 (en) 1999-09-03 2005-10-25 Chematur Engineering Ab High pressure and high temperature reaction system

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
HUP0401866A3 (en) 2001-06-06 2005-12-28 Nichia Corp Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
JP2003063889A (ja) * 2001-08-24 2003-03-05 Tokyo Denpa Co Ltd 単結晶育成用容器
WO2003043150A1 (en) 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
AU2002347692C1 (en) 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
WO2003097906A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
AU2002354467A1 (en) 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
CN1297695C (zh) * 2003-04-25 2007-01-31 郎丽红 人工石英晶体的高压釜
JP4276627B2 (ja) 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 単結晶育成用圧力容器およびその製造方法
CN112442730A (zh) * 2019-08-29 2021-03-05 桂林百锐光电技术有限公司 一种温差水热法生长大尺寸体单晶的装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Naturwissenschaften 55, 1968, Heft 7, S. 336-339 *
SPAIN, J.L. - PAAUWE, J.: High Pressure Technology, Vol. II, New York, Basel 1977, S. 300-307 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229468A1 (de) * 1992-09-03 1994-03-10 Streitenberg Hubert Dr Med Behälter für flüssige oder pastöse Inhaltsstoffe
WO1996002471A1 (en) * 1994-07-13 1996-02-01 Rpc Waste Management Services, Inc. Doing Business As Eco Waste Technologies Turbulent flow cold-wall reactor
US5552039A (en) 1994-07-13 1996-09-03 Rpc Waste Management Services, Inc. Turbulent flow cold-wall reactor
EP0860182A3 (en) * 1997-02-19 2001-12-05 Hitachi, Ltd. Oxidation processing method, and apparatus and process vessel using the method
US6958122B1 (en) 1999-09-03 2005-10-25 Chematur Engineering Ab High pressure and high temperature reaction system

Also Published As

Publication number Publication date
JPH0243939A (ja) 1990-02-14
CN1022335C (zh) 1993-10-06
CN1053819A (zh) 1991-08-14
JPH0722692B2 (ja) 1995-03-15

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Legal Events

Date Code Title Description
8100 Publication of the examined application without publication of unexamined application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee