DE3938302C2 - - Google Patents
Info
- Publication number
- DE3938302C2 DE3938302C2 DE3938302A DE3938302A DE3938302C2 DE 3938302 C2 DE3938302 C2 DE 3938302C2 DE 3938302 A DE3938302 A DE 3938302A DE 3938302 A DE3938302 A DE 3938302A DE 3938302 C2 DE3938302 C2 DE 3938302C2
- Authority
- DE
- Germany
- Prior art keywords
- diodes
- bias
- signal charge
- image sensor
- charges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002347 injection Methods 0.000 claims description 101
- 239000007924 injection Substances 0.000 claims description 101
- 230000005540 biological transmission Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000006870 function Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 210000003608 fece Anatomy 0.000 description 3
- 230000036316 preload Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 241001235534 Graphis <ascomycete fungus> Species 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1534—Interline transfer
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29014888 | 1988-11-18 | ||
| JP1015511A JP2777162B2 (ja) | 1989-01-25 | 1989-01-25 | 固体撮像装置の駆動方法 |
| JP1266160A JPH03129771A (ja) | 1989-10-16 | 1989-10-16 | 固体撮像装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3938302A1 DE3938302A1 (de) | 1990-05-23 |
| DE3938302C2 true DE3938302C2 (en, 2012) | 1992-03-12 |
Family
ID=27281038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3938302A Granted DE3938302A1 (de) | 1988-11-18 | 1989-11-17 | Festkoerper-bildsensor |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5063449A (en, 2012) |
| KR (1) | KR0127300B1 (en, 2012) |
| DE (1) | DE3938302A1 (en, 2012) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5235426A (en) * | 1988-08-24 | 1993-08-10 | Oki Electric Industry Co., Ltd. | Solid state image sensing device having no field isolation layer |
| JP2604905B2 (ja) * | 1990-11-29 | 1997-04-30 | 宇宙開発事業団 | 固体撮像装置 |
| US5298777A (en) * | 1991-02-12 | 1994-03-29 | Gold Star Electron Co., Ltd. | CCD image sensor of interlaced scanning type |
| US5307169A (en) * | 1991-05-07 | 1994-04-26 | Olympus Optical Co., Ltd. | Solid-state imaging device using high relative dielectric constant material as insulating film |
| US5502488A (en) * | 1991-05-07 | 1996-03-26 | Olympus Optical Co., Ltd. | Solid-state imaging device having a low impedance structure |
| JPH06164826A (ja) * | 1992-11-24 | 1994-06-10 | Toshiba Corp | 固体撮像装置とその駆動方法 |
| US5504527A (en) * | 1994-06-28 | 1996-04-02 | Eastman Kodak Company | Image sensor with improved charge transfer inefficiency characteristics |
| DE69522013T2 (de) * | 1995-04-07 | 2002-03-28 | Ifire Technology Inc., Fort Saskatchewan | Ausleseschaltung für eine bildmatrix mit aktiver matrix |
| JP4300635B2 (ja) * | 1999-07-22 | 2009-07-22 | コニカミノルタホールディングス株式会社 | 固体撮像装置 |
| US7719573B2 (en) * | 2000-10-03 | 2010-05-18 | Sony Corporation | Device and method for processing photographic image data |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133667A (ja) * | 1986-11-26 | 1988-06-06 | Ricoh Co Ltd | 密着形光電変換装置 |
| JPS63148778A (ja) * | 1986-12-11 | 1988-06-21 | Sony Corp | 固体撮像素子 |
| US4912560A (en) * | 1988-01-29 | 1990-03-27 | Kabushiki Kaisha Toshiba | Solid state image sensing device |
| US4908518A (en) * | 1989-02-10 | 1990-03-13 | Eastman Kodak Company | Interline transfer CCD image sensing device with electrode structure for each pixel |
-
1989
- 1989-11-16 US US07/437,260 patent/US5063449A/en not_active Expired - Lifetime
- 1989-11-17 DE DE3938302A patent/DE3938302A1/de active Granted
- 1989-11-18 KR KR1019890016770A patent/KR0127300B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5063449A (en) | 1991-11-05 |
| KR900008677A (ko) | 1990-06-03 |
| DE3938302A1 (de) | 1990-05-23 |
| KR0127300B1 (ko) | 1998-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |