DE3919951A1 - Spannungsgesteuerte halbleiterschalteranordnung - Google Patents
Spannungsgesteuerte halbleiterschalteranordnungInfo
- Publication number
- DE3919951A1 DE3919951A1 DE19893919951 DE3919951A DE3919951A1 DE 3919951 A1 DE3919951 A1 DE 3919951A1 DE 19893919951 DE19893919951 DE 19893919951 DE 3919951 A DE3919951 A DE 3919951A DE 3919951 A1 DE3919951 A1 DE 3919951A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- electrode
- emitter
- switching transistor
- semiconductor switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 230000005669 field effect Effects 0.000 claims description 45
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19893919951 DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19893919951 DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3919951A1 true DE3919951A1 (de) | 1990-12-20 |
| DE3919951C2 DE3919951C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-02-27 |
Family
ID=6383031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19893919951 Granted DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3919951A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3510948A1 (de) * | 1984-03-26 | 1985-10-03 | Hitachi, Ltd., Tokio/Tokyo | Schaltungsvorrichtung |
| DE3546208A1 (de) * | 1984-12-28 | 1986-07-03 | Sgs Microelettronica S.P.A., Catania | Monolithisch integrierte steuerschaltung hohen wirkungsgrades fuer die umschaltung von transistoren |
-
1989
- 1989-06-19 DE DE19893919951 patent/DE3919951A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3510948A1 (de) * | 1984-03-26 | 1985-10-03 | Hitachi, Ltd., Tokio/Tokyo | Schaltungsvorrichtung |
| DE3546208A1 (de) * | 1984-12-28 | 1986-07-03 | Sgs Microelettronica S.P.A., Catania | Monolithisch integrierte steuerschaltung hohen wirkungsgrades fuer die umschaltung von transistoren |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3919951C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licenses declared (paragraph 23) | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TEMIC SEMICONDUCTOR GMBH, 74072 HEILBRONN, DE |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ATMEL GERMANY GMBH, 74072 HEILBRONN, DE |