DE3919951C2 - - Google Patents
Info
- Publication number
- DE3919951C2 DE3919951C2 DE19893919951 DE3919951A DE3919951C2 DE 3919951 C2 DE3919951 C2 DE 3919951C2 DE 19893919951 DE19893919951 DE 19893919951 DE 3919951 A DE3919951 A DE 3919951A DE 3919951 C2 DE3919951 C2 DE 3919951C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- electrode
- switching transistor
- field effect
- semiconductor switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 34
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19893919951 DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19893919951 DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3919951A1 DE3919951A1 (de) | 1990-12-20 |
| DE3919951C2 true DE3919951C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-02-27 |
Family
ID=6383031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19893919951 Granted DE3919951A1 (de) | 1989-06-19 | 1989-06-19 | Spannungsgesteuerte halbleiterschalteranordnung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3919951A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07107973B2 (ja) * | 1984-03-26 | 1995-11-15 | 株式会社日立製作所 | スイツチング回路 |
| IT1221009B (it) * | 1984-12-28 | 1990-06-21 | Sgs Ates Componenti Elettonici | Circuito di comando ad alto rendimento,integrato monoliticamente,per la commutazione di transistori |
-
1989
- 1989-06-19 DE DE19893919951 patent/DE3919951A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3919951A1 (de) | 1990-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3838962C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE69307368T2 (de) | Treiberschaltung zur Stromsenkung für zwei Spannungsquellen | |
| DE3126525A1 (de) | "spannungsgesteuerter halbleiterschalter und damit versehene spannungswandlerschaltung" | |
| DE1295647B (de) | Logische Schaltung mit einem mehrere Eingaenge aufweisenden Dioden-Eingangsgatter | |
| DE1537972C3 (de) | Schaltanordnung zur Verbesserung der An- und Abschalteigenschaften eines Schalttransistors einer binären Schaltung | |
| DE2640621C3 (de) | Halbleiter-Schalteinrichtung | |
| DE60209621T2 (de) | Stromschaltkreis | |
| DE2938122A1 (de) | Transistorschaltkreis und verfahren zu dessen betrieb | |
| EP0148395A2 (de) | Breitbandkoppelfeld in Matrixform | |
| EP2020749B1 (de) | Treiberschaltung zur Ansteuerung eines Leistungshalbleiterschalters | |
| EP0169615B1 (de) | Klasse-E-Verstärker | |
| DE3919951C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3539379C2 (de) | Monolithisch integrierte Steuerschaltung für die Umschaltung von Transistoren | |
| EP0070032B1 (de) | Ansteuerschaltung für wenigstens eine lichtemittierende Diode | |
| DE3727948C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| EP1099308B1 (de) | Treiberschaltung | |
| EP2020748A2 (de) | Aktive Clampingschaltung für einen Leistungshalbleiterschalter | |
| DE3712998C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3437371C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2352654A1 (de) | Hochspannungsschaltkreis | |
| DE3801530C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2237764A1 (de) | Schaltung zum bevorrechtigten inbetriebsetzen einer stufe einer elektronischen folgeschaltung mit halteschaltung | |
| DE4410211B4 (de) | Schaltungsanordnung zur schaltbaren Ansteuerung einer Last | |
| DE2928452C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| EP0555648A2 (de) | Schaltungsanordnung zum Ansteuern von feldgesteuerten Leistungsschaltern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licenses declared (paragraph 23) | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TEMIC SEMICONDUCTOR GMBH, 74072 HEILBRONN, DE |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ATMEL GERMANY GMBH, 74072 HEILBRONN, DE |