DE3885334T2 - Verfahren zum Betrieb eines Lasers mit verteilter Rückkopplung. - Google Patents

Verfahren zum Betrieb eines Lasers mit verteilter Rückkopplung.

Info

Publication number
DE3885334T2
DE3885334T2 DE88303801T DE3885334T DE3885334T2 DE 3885334 T2 DE3885334 T2 DE 3885334T2 DE 88303801 T DE88303801 T DE 88303801T DE 3885334 T DE3885334 T DE 3885334T DE 3885334 T2 DE3885334 T2 DE 3885334T2
Authority
DE
Germany
Prior art keywords
laser
operating
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88303801T
Other languages
English (en)
Other versions
DE3885334D1 (de
Inventor
Kang-Yih Liou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE3885334D1 publication Critical patent/DE3885334D1/de
Application granted granted Critical
Publication of DE3885334T2 publication Critical patent/DE3885334T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • G02F3/02Optical bistable devices
    • G02F3/026Optical bistable devices based on laser effects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06258Controlling the frequency of the radiation with DFB-structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213Amplitude modulation
DE88303801T 1987-05-04 1988-04-27 Verfahren zum Betrieb eines Lasers mit verteilter Rückkopplung. Expired - Fee Related DE3885334T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/046,595 US4835779A (en) 1987-05-04 1987-05-04 Method and apparatus for the operation of a distributed feedback laser

Publications (2)

Publication Number Publication Date
DE3885334D1 DE3885334D1 (de) 1993-12-09
DE3885334T2 true DE3885334T2 (de) 1994-05-11

Family

ID=21944303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88303801T Expired - Fee Related DE3885334T2 (de) 1987-05-04 1988-04-27 Verfahren zum Betrieb eines Lasers mit verteilter Rückkopplung.

Country Status (5)

Country Link
US (1) US4835779A (de)
EP (1) EP0290191B1 (de)
JP (1) JPH06103778B2 (de)
CA (1) CA1297949C (de)
DE (1) DE3885334T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939474A (en) * 1988-08-26 1990-07-03 At&T Bell Laboratories Semiconductor optical amplifier with shortened gain recovery time
DE3934865A1 (de) * 1989-10-19 1991-04-25 Siemens Ag Hochfrequent modulierbarer halbleiterlaser
JP2804838B2 (ja) * 1990-10-11 1998-09-30 国際電信電話株式会社 波長可変半導体レーザ
FR2668670B1 (fr) * 1990-10-31 1992-12-31 France Etat Procede de transmission optique par decalage en longueur d'onde et systeme correspondant.
US5157537A (en) * 1991-02-01 1992-10-20 Yeda Research And Development Co., Ltd. Distributed resonant cavity light beam modulator
JP2693662B2 (ja) * 1991-07-16 1997-12-24 株式会社東芝 光増幅装置
FR2682781B1 (fr) * 1991-10-16 1993-11-26 France Telecom Generateur de fonctions logiques utilisant une transposition optique dans une diode laser a contre-reaction distribuee.
US5206877A (en) * 1992-02-18 1993-04-27 Eastman Kodak Company Distributed feedback laser diodes with selectively placed lossy sections
US5406420A (en) * 1992-06-15 1995-04-11 Research Development Corporation Of Japan Optical device
FR2703524B1 (fr) * 1993-03-29 1995-05-12 France Telecom Modulateur optique d'amplitude utilisant une structure de type laser DFB biélectrode.
JPH07326820A (ja) * 1994-05-30 1995-12-12 Mitsubishi Electric Corp 波長可変半導体レーザ装置
US5504772A (en) * 1994-09-09 1996-04-02 Deacon Research Laser with electrically-controlled grating reflector
US6185232B1 (en) * 1998-06-30 2001-02-06 Scientific-Atlanta, Inc. Wavelength modulated laser for minimizing effects of Rayleigh backscattering
US7580183B2 (en) 2002-03-01 2009-08-25 Sumitomo Electric Industries, Ltd. Light generator, optical amplifier, and optical communication system
IES20020710A2 (en) * 2002-09-02 2004-03-10 Intune Technologies Ltd Method for detection of regions of instability in tunable laser
US20060140233A1 (en) * 2004-12-28 2006-06-29 Jesse Chin Laser driver with integrated bond options for selectable currents
WO2008016581A2 (en) * 2006-07-31 2008-02-07 Duke University Imaging neuronal activity using nonlinear phase modulation as an intrinsic contrast mechanism
JP6440138B2 (ja) * 2014-02-28 2018-12-19 国立大学法人京都大学 レーザ装置
CN105490164A (zh) * 2015-12-30 2016-04-13 华中科技大学 一种分布反馈激光器
CN107910749A (zh) * 2017-11-20 2018-04-13 烽火通信科技股份有限公司 无啁啾的增益调制半导体激光器装置及激光强度调制方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243951A (en) * 1978-06-12 1981-01-06 Rca Corporation High repetition rate driver circuit for modulation of injection lasers
JPS6273689A (ja) * 1985-09-26 1987-04-04 Fujitsu Ltd 双安定半導体レ−ザ
JPS62219585A (ja) * 1986-03-19 1987-09-26 Fujitsu Ltd 半導体発光装置
JPH117284A (ja) * 1997-06-18 1999-01-12 Star Micronics Co Ltd 面実装部品のリード端子

Also Published As

Publication number Publication date
US4835779A (en) 1989-05-30
CA1297949C (en) 1992-03-24
DE3885334D1 (de) 1993-12-09
EP0290191B1 (de) 1993-11-03
JPS63287088A (ja) 1988-11-24
JPH06103778B2 (ja) 1994-12-14
EP0290191A3 (en) 1989-04-05
EP0290191A2 (de) 1988-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee