DE68922056D1 - Optisch bistabile Laserdiode und Verfahren zum Steuern derselben. - Google Patents

Optisch bistabile Laserdiode und Verfahren zum Steuern derselben.

Info

Publication number
DE68922056D1
DE68922056D1 DE68922056T DE68922056T DE68922056D1 DE 68922056 D1 DE68922056 D1 DE 68922056D1 DE 68922056 T DE68922056 T DE 68922056T DE 68922056 T DE68922056 T DE 68922056T DE 68922056 D1 DE68922056 D1 DE 68922056D1
Authority
DE
Germany
Prior art keywords
controlling
same
laser diode
bistable laser
optically bistable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922056T
Other languages
English (en)
Other versions
DE68922056T2 (de
Inventor
Tatsuyuki Sanada
Tetsufumi Odagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68922056D1 publication Critical patent/DE68922056D1/de
Publication of DE68922056T2 publication Critical patent/DE68922056T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
DE68922056T 1988-09-30 1989-09-29 Optisch bistabile Laserdiode und Verfahren zum Steuern derselben. Expired - Fee Related DE68922056T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24832388 1988-09-30

Publications (2)

Publication Number Publication Date
DE68922056D1 true DE68922056D1 (de) 1995-05-11
DE68922056T2 DE68922056T2 (de) 1995-08-03

Family

ID=17176368

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922056T Expired - Fee Related DE68922056T2 (de) 1988-09-30 1989-09-29 Optisch bistabile Laserdiode und Verfahren zum Steuern derselben.

Country Status (4)

Country Link
US (1) US5014280A (de)
EP (1) EP0362078B1 (de)
JP (1) JPH02168691A (de)
DE (1) DE68922056T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185756A (en) * 1991-06-06 1993-02-09 Gte Laboratories Incorporated Wideband optical amplifier-receiver utilizing two electrode optical amplifier
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
GB201005696D0 (en) * 2010-04-06 2010-05-19 Oclaro Technology Plc Semiconductor laser diodes
JP5623159B2 (ja) * 2010-06-30 2014-11-12 ソニー株式会社 半導体光増幅器の位置合わせ方法及び光出力装置
JP2012015266A (ja) 2010-06-30 2012-01-19 Sony Corp 半導体光増幅器
JP6080798B2 (ja) * 2014-05-01 2017-02-15 ソニー株式会社 半導体光増幅器及び半導体レーザ装置組立体並びに半導体光増幅器の位置調整方法
DE112018005189T5 (de) 2017-11-02 2020-07-02 Sony Corporation Halbleiterlaser-Ansteuerschaltung, Halbleiterlaser-Ansteuerschaltungsverfahren, Distanzmesseinrichtung und Elektronikeinrichtung
CN112166535B (zh) * 2018-05-21 2024-01-16 谷歌有限责任公司 用于突发模式可调谐eml传送器的波长漂移抑制
CN112189287A (zh) * 2018-05-21 2021-01-05 谷歌有限责任公司 突发模式激光器驱动电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831590A (ja) * 1981-08-18 1983-02-24 Nec Corp 光機能素子
US4562569A (en) * 1982-01-05 1985-12-31 California Institute Of Technology Tandem coupled cavity lasers with separate current control and high parasitic resistance between them for bistability and negative resistance characteristics and use thereof for optical disc readout
JPS6297386A (ja) * 1985-10-23 1987-05-06 Nec Corp 分布帰還型双安定半導体レ−ザ
JPS62119994A (ja) * 1985-11-19 1987-06-01 Nec Corp 半導体レ−ザ装置
JPS63156385A (ja) * 1986-12-19 1988-06-29 Fujitsu Ltd 光双安定半導体レ−ザ
JP2518255B2 (ja) * 1987-02-27 1996-07-24 日本電気株式会社 多重量子井戸型光双安定半導体レ−ザ

Also Published As

Publication number Publication date
US5014280A (en) 1991-05-07
JPH02168691A (ja) 1990-06-28
EP0362078A3 (en) 1990-09-12
EP0362078B1 (de) 1995-04-05
DE68922056T2 (de) 1995-08-03
EP0362078A2 (de) 1990-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee