DE3872705D1 - Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine. - Google Patents
Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine.Info
- Publication number
- DE3872705D1 DE3872705D1 DE8989901625T DE3872705T DE3872705D1 DE 3872705 D1 DE3872705 D1 DE 3872705D1 DE 8989901625 T DE8989901625 T DE 8989901625T DE 3872705 T DE3872705 T DE 3872705T DE 3872705 D1 DE3872705 D1 DE 3872705D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- plane
- moving
- exposed
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B1/00—Thermonuclear fusion reactors
- G21B1/11—Details
- G21B1/23—Optical systems, e.g. for irradiating targets, for heating plasma or for plasma diagnostics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/139,637 US4870668A (en) | 1987-12-30 | 1987-12-30 | Gap sensing/adjustment apparatus and method for a lithography machine |
PCT/US1988/004674 WO1989006430A1 (en) | 1987-12-30 | 1988-12-28 | Gap sensing/adjustment apparatus and method for a lithography machine |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3872705D1 true DE3872705D1 (de) | 1992-08-13 |
DE3872705T2 DE3872705T2 (de) | 1993-01-21 |
Family
ID=22487599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8989901625T Expired - Fee Related DE3872705T2 (de) | 1987-12-30 | 1988-12-28 | Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4870668A (de) |
EP (1) | EP0349632B1 (de) |
JP (1) | JPH02502503A (de) |
KR (1) | KR920005740B1 (de) |
AT (1) | ATE78110T1 (de) |
DE (1) | DE3872705T2 (de) |
WO (1) | WO1989006430A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2799575B2 (ja) * | 1988-09-30 | 1998-09-17 | キヤノン株式会社 | 露光方法 |
WO1991018401A1 (en) * | 1990-05-21 | 1991-11-28 | Hampshire Instruments, Inc. | Mask tray for and method of loading mask in lithography system |
US5197089A (en) * | 1990-05-21 | 1993-03-23 | Hampshire Instruments, Inc. | Pin chuck for lithography system |
JP3004045B2 (ja) * | 1990-11-19 | 2000-01-31 | 株式会社東芝 | 露光装置 |
US5150392A (en) * | 1991-09-09 | 1992-09-22 | International Business Machines Corporation | X-ray mask containing a cantilevered tip for gap control and alignment |
US5528118A (en) * | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US6989647B1 (en) * | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US6246204B1 (en) | 1994-06-27 | 2001-06-12 | Nikon Corporation | Electromagnetic alignment and scanning apparatus |
US5623853A (en) * | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
US6008500A (en) * | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
TW318255B (de) | 1995-05-30 | 1997-10-21 | Philips Electronics Nv | |
US5760564A (en) * | 1995-06-27 | 1998-06-02 | Nikon Precision Inc. | Dual guide beam stage mechanism with yaw control |
US6215896B1 (en) * | 1995-09-29 | 2001-04-10 | Advanced Micro Devices | System for enabling the real-time detection of focus-related defects |
JP2000228355A (ja) * | 1998-12-04 | 2000-08-15 | Canon Inc | 半導体露光装置およびデバイス製造方法 |
US6437463B1 (en) | 2000-04-24 | 2002-08-20 | Nikon Corporation | Wafer positioner with planar motor and mag-lev fine stage |
KR100471018B1 (ko) | 2000-11-28 | 2005-03-08 | 스미도모쥬기가이고교 가부시키가이샤 | 두 개의 대상물 간의 갭 조절장치 및 조절방법 |
EP1845281B1 (de) * | 2006-04-11 | 2016-03-09 | Integrated Dynamics Engineering GmbH | Aktives Schwingungsisolationssystem |
CN116710729A (zh) | 2020-09-30 | 2023-09-05 | 艾德克斯实验室公司 | Z轴测量夹具和使用该夹具确定物体的平面度的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204547A (en) * | 1981-06-12 | 1982-12-15 | Hitachi Ltd | Exposing method |
US4444492A (en) * | 1982-05-15 | 1984-04-24 | General Signal Corporation | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
US4504144A (en) * | 1982-07-06 | 1985-03-12 | The Perkin-Elmer Corporation | Simple electromechanical tilt and focus device |
US4472824A (en) * | 1982-08-04 | 1984-09-18 | The Perkin-Elmer Corporation | Apparatus for effecting alignment and spacing control of a mask and wafer for use in X-ray lithography |
US4516253A (en) * | 1983-03-15 | 1985-05-07 | Micronix Partners | Lithography system |
US4525852A (en) * | 1983-03-15 | 1985-06-25 | Micronix Partners | Alignment apparatus |
US4538069A (en) * | 1983-10-28 | 1985-08-27 | Control Data Corporation | Capacitance height gage applied in reticle position detection system for electron beam lithography apparatus |
US4694477A (en) * | 1983-12-21 | 1987-09-15 | Hewlett-Packard Company | Flexure stage alignment apparatus |
US4613981A (en) * | 1984-01-24 | 1986-09-23 | Varian Associates, Inc. | Method and apparatus for lithographic rotate and repeat processing |
-
1987
- 1987-12-30 US US07/139,637 patent/US4870668A/en not_active Expired - Fee Related
-
1988
- 1988-12-28 EP EP89901625A patent/EP0349632B1/de not_active Expired - Lifetime
- 1988-12-28 AT AT89901625T patent/ATE78110T1/de not_active IP Right Cessation
- 1988-12-28 KR KR1019890701617A patent/KR920005740B1/ko not_active IP Right Cessation
- 1988-12-28 DE DE8989901625T patent/DE3872705T2/de not_active Expired - Fee Related
- 1988-12-28 WO PCT/US1988/004674 patent/WO1989006430A1/en active IP Right Grant
- 1988-12-28 JP JP1501622A patent/JPH02502503A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR920005740B1 (ko) | 1992-07-16 |
KR900701015A (ko) | 1990-08-17 |
EP0349632A1 (de) | 1990-01-10 |
WO1989006430A1 (en) | 1989-07-13 |
JPH02502503A (ja) | 1990-08-09 |
US4870668A (en) | 1989-09-26 |
DE3872705T2 (de) | 1993-01-21 |
ATE78110T1 (de) | 1992-07-15 |
EP0349632A4 (de) | 1990-05-14 |
EP0349632B1 (de) | 1992-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |