ATE78110T1 - Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine. - Google Patents

Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine.

Info

Publication number
ATE78110T1
ATE78110T1 AT89901625T AT89901625T ATE78110T1 AT E78110 T1 ATE78110 T1 AT E78110T1 AT 89901625 T AT89901625 T AT 89901625T AT 89901625 T AT89901625 T AT 89901625T AT E78110 T1 ATE78110 T1 AT E78110T1
Authority
AT
Austria
Prior art keywords
wafer
plane
moving
exposed
fine
Prior art date
Application number
AT89901625T
Other languages
English (en)
Inventor
Robert D Frankel
Marc J Martin
David G Baker
Thomas L Duft
Original Assignee
Hampshire Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hampshire Instr Inc filed Critical Hampshire Instr Inc
Application granted granted Critical
Publication of ATE78110T1 publication Critical patent/ATE78110T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B1/00—Thermonuclear fusion reactors
    • G21B1/11—Details
    • G21B1/23—Optical systems, e.g. for irradiating targets, for heating plasma or for plasma diagnostics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT89901625T 1987-12-30 1988-12-28 Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine. ATE78110T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/139,637 US4870668A (en) 1987-12-30 1987-12-30 Gap sensing/adjustment apparatus and method for a lithography machine
PCT/US1988/004674 WO1989006430A1 (en) 1987-12-30 1988-12-28 Gap sensing/adjustment apparatus and method for a lithography machine
EP89901625A EP0349632B1 (de) 1987-12-30 1988-12-28 Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine

Publications (1)

Publication Number Publication Date
ATE78110T1 true ATE78110T1 (de) 1992-07-15

Family

ID=22487599

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89901625T ATE78110T1 (de) 1987-12-30 1988-12-28 Vorrichtung und verfahren zum feststellen/regulieren des freiraums bei einer lithographiemaschine.

Country Status (7)

Country Link
US (1) US4870668A (de)
EP (1) EP0349632B1 (de)
JP (1) JPH02502503A (de)
KR (1) KR920005740B1 (de)
AT (1) ATE78110T1 (de)
DE (1) DE3872705T2 (de)
WO (1) WO1989006430A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2799575B2 (ja) * 1988-09-30 1998-09-17 キヤノン株式会社 露光方法
US5197089A (en) * 1990-05-21 1993-03-23 Hampshire Instruments, Inc. Pin chuck for lithography system
JPH05506544A (ja) * 1990-05-21 1993-09-22 ハンプシャー　インスツルメンツ，インコーポレイテッド リソグラフィー装置にマスクを装着するためのマスクトレーおよび方法
JP3004045B2 (ja) * 1990-11-19 2000-01-31 株式会社東芝 露光装置
US5150392A (en) * 1991-09-09 1992-09-22 International Business Machines Corporation X-ray mask containing a cantilevered tip for gap control and alignment
US6989647B1 (en) * 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US6246204B1 (en) 1994-06-27 2001-06-12 Nikon Corporation Electromagnetic alignment and scanning apparatus
US5623853A (en) * 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
US6008500A (en) * 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
TW318255B (de) 1995-05-30 1997-10-21 Philips Electronics Nv
US5760564A (en) * 1995-06-27 1998-06-02 Nikon Precision Inc. Dual guide beam stage mechanism with yaw control
US6215896B1 (en) * 1995-09-29 2001-04-10 Advanced Micro Devices System for enabling the real-time detection of focus-related defects
JP2000228355A (ja) * 1998-12-04 2000-08-15 Canon Inc 半導体露光装置およびデバイス製造方法
US6437463B1 (en) 2000-04-24 2002-08-20 Nikon Corporation Wafer positioner with planar motor and mag-lev fine stage
KR100471018B1 (ko) 2000-11-28 2005-03-08 스미도모쥬기가이고교 가부시키가이샤 두 개의 대상물 간의 갭 조절장치 및 조절방법
EP1845281B1 (de) * 2006-04-11 2016-03-09 Integrated Dynamics Engineering GmbH Aktives Schwingungsisolationssystem
CN116710729A (zh) 2020-09-30 2023-09-05 艾德克斯实验室公司 Z轴测量夹具和使用该夹具确定物体的平面度的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204547A (en) * 1981-06-12 1982-12-15 Hitachi Ltd Exposing method
US4444492A (en) * 1982-05-15 1984-04-24 General Signal Corporation Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4504144A (en) * 1982-07-06 1985-03-12 The Perkin-Elmer Corporation Simple electromechanical tilt and focus device
US4472824A (en) * 1982-08-04 1984-09-18 The Perkin-Elmer Corporation Apparatus for effecting alignment and spacing control of a mask and wafer for use in X-ray lithography
US4525852A (en) * 1983-03-15 1985-06-25 Micronix Partners Alignment apparatus
US4516253A (en) * 1983-03-15 1985-05-07 Micronix Partners Lithography system
US4538069A (en) * 1983-10-28 1985-08-27 Control Data Corporation Capacitance height gage applied in reticle position detection system for electron beam lithography apparatus
US4694477A (en) * 1983-12-21 1987-09-15 Hewlett-Packard Company Flexure stage alignment apparatus
US4613981A (en) * 1984-01-24 1986-09-23 Varian Associates, Inc. Method and apparatus for lithographic rotate and repeat processing

Also Published As

Publication number Publication date
US4870668A (en) 1989-09-26
DE3872705T2 (de) 1993-01-21
EP0349632A4 (de) 1990-05-14
DE3872705D1 (de) 1992-08-13
KR900701015A (ko) 1990-08-17
EP0349632B1 (de) 1992-07-08
EP0349632A1 (de) 1990-01-10
JPH02502503A (ja) 1990-08-09
WO1989006430A1 (en) 1989-07-13
KR920005740B1 (ko) 1992-07-16

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