DE3856475D1 - Monokristallines Dünnschichtsubstrat - Google Patents

Monokristallines Dünnschichtsubstrat

Info

Publication number
DE3856475D1
DE3856475D1 DE3856475T DE3856475T DE3856475D1 DE 3856475 D1 DE3856475 D1 DE 3856475D1 DE 3856475 T DE3856475 T DE 3856475T DE 3856475 T DE3856475 T DE 3856475T DE 3856475 D1 DE3856475 D1 DE 3856475D1
Authority
DE
Germany
Prior art keywords
thin film
film substrate
monocrystalline thin
monocrystalline
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3856475T
Other languages
English (en)
Other versions
DE3856475T2 (de
Inventor
Takahiro Imai
Naoji Fujimori
Hideaki Nakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5838387A external-priority patent/JPH0810670B2/ja
Priority claimed from JP62200460A external-priority patent/JP2664056B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3856475D1 publication Critical patent/DE3856475D1/de
Application granted granted Critical
Publication of DE3856475T2 publication Critical patent/DE3856475T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3856475T 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat Expired - Lifetime DE3856475T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5838387A JPH0810670B2 (ja) 1987-03-12 1987-03-12 薄膜単結晶シリコン基板
JP62200460A JP2664056B2 (ja) 1987-08-10 1987-08-10 薄膜単結晶基板

Publications (2)

Publication Number Publication Date
DE3856475D1 true DE3856475D1 (de) 2001-07-12
DE3856475T2 DE3856475T2 (de) 2001-11-08

Family

ID=26399434

Family Applications (3)

Application Number Title Priority Date Filing Date
DE3856278T Expired - Fee Related DE3856278T2 (de) 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat
DE3856475T Expired - Lifetime DE3856475T2 (de) 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat
DE3852960T Expired - Lifetime DE3852960T2 (de) 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3856278T Expired - Fee Related DE3856278T2 (de) 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3852960T Expired - Lifetime DE3852960T2 (de) 1987-03-12 1988-03-11 Monokristallines Dünnschichtsubstrat.

Country Status (3)

Country Link
US (1) US5373171A (de)
EP (3) EP0282075B1 (de)
DE (3) DE3856278T2 (de)

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CH675997A5 (en) * 1988-10-21 1990-11-30 Battelle Memorial Institute Thermo-conductive sintered silicon carbide laminate
US5272009A (en) * 1988-10-21 1993-12-21 Battelle Memorial Institute Laminate material and its use as heat-sink
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
EP0420188A1 (de) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Halbleitende Heteroübergangsstruktur
NL9000973A (nl) * 1990-04-24 1991-11-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE4027580A1 (de) * 1990-08-31 1992-03-05 Lux Benno Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
JP3131005B2 (ja) * 1992-03-06 2001-01-31 パイオニア株式会社 化合物半導体気相成長装置
US5361272A (en) * 1992-09-18 1994-11-01 Stephen Krissman Semiconductor architecture and application thereof
US5639551A (en) * 1993-02-10 1997-06-17 California Institute Of Technology Low pressure growth of cubic boron nitride films
JP3309492B2 (ja) * 1993-05-28 2002-07-29 住友電気工業株式会社 半導体装置用基板
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
EP0930702B1 (de) * 1994-03-25 2003-07-09 Sumitomo Electric Industries, Ltd. Orientierbares Material und Oberflächenwellenanordnung
JP3344441B2 (ja) * 1994-03-25 2002-11-11 住友電気工業株式会社 表面弾性波素子
DE69520196T2 (de) * 1994-12-05 2001-07-19 Sumitomo Electric Industries Einkristalline-Dünnschicht aus Quarz und Verfahren zu ihrer Herstellung
US5653800A (en) * 1995-08-03 1997-08-05 Eneco, Inc. Method for producing N-type semiconducting diamond
SE9600199D0 (sv) * 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
KR20000068738A (ko) * 1997-08-13 2000-11-25 모리시타 요이찌 반도체기판 및 반도체소자
US6891236B1 (en) 1999-01-14 2005-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4294140B2 (ja) * 1999-01-27 2009-07-08 有限会社アプライドダイヤモンド ダイヤモンド薄膜の改質方法及びダイヤモンド薄膜の改質及び薄膜形成方法並びにダイヤモンド薄膜の加工方法
WO2001082384A1 (de) 2000-04-26 2001-11-01 Osram Opto Semiconductors Gmbh Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
EP1277241B1 (de) 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Lumineszenzdiodenchip auf der basis von gan
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
WO2002081789A1 (fr) * 2001-04-04 2002-10-17 Nikko Materials Co., Ltd. Procede de fabrication de monocristal semi-conducteur a compose znte et dispositif semi-conducteur mettant en oeuvre un tel monocristal
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
CN101155949A (zh) * 2005-01-26 2008-04-02 阿波罗钻石公司 金刚石上的氮化镓发光装置
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7498191B2 (en) * 2006-05-22 2009-03-03 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US7557378B2 (en) * 2006-11-08 2009-07-07 Raytheon Company Boron aluminum nitride diamond heterostructure
US8853745B2 (en) * 2009-01-20 2014-10-07 Raytheon Company Silicon based opto-electric circuits
US7994550B2 (en) * 2009-05-22 2011-08-09 Raytheon Company Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
US8183086B2 (en) * 2009-06-16 2012-05-22 Chien-Min Sung Diamond GaN devices and associated methods
US8212294B2 (en) * 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
JP5935751B2 (ja) * 2012-05-08 2016-06-15 信越化学工業株式会社 放熱基板及びその製造方法
US9259818B2 (en) 2012-11-06 2016-02-16 Sinmat, Inc. Smooth diamond surfaces and CMP method for forming
US8823146B1 (en) * 2013-02-19 2014-09-02 Raytheon Company Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
CN105669030B (zh) * 2016-01-21 2018-07-20 建德市天一玻璃制品有限公司 大红水晶钻及其加工方法
CN114628229A (zh) * 2020-12-11 2022-06-14 中国科学院微电子研究所 一种多层半导体材料结构及制备方法
CN112750690A (zh) * 2021-01-18 2021-05-04 西安电子科技大学 金刚石衬底上的N极性面GaN/InAlN异质结及制备方法

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US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
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JPS59213126A (ja) * 1983-05-19 1984-12-03 Sumitomo Electric Ind Ltd ダイヤモンド半導体素子の製造法
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US4661176A (en) * 1985-02-27 1987-04-28 The United States Of America As Represented By The Secretary Of The Air Force Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates
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US4751554A (en) * 1985-09-27 1988-06-14 Rca Corporation Silicon-on-sapphire integrated circuit and method of making the same
EP0221531A3 (de) * 1985-11-06 1992-02-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren
FR2616272B1 (fr) * 1987-06-02 1990-10-26 Thomson Csf Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

Also Published As

Publication number Publication date
EP0619599A1 (de) 1994-10-12
EP0619599B1 (de) 2001-06-06
DE3852960T2 (de) 1995-07-06
EP0635874A1 (de) 1995-01-25
DE3856278D1 (de) 1999-01-14
DE3856278T2 (de) 1999-05-20
EP0282075A2 (de) 1988-09-14
EP0282075A3 (en) 1990-02-28
DE3852960D1 (de) 1995-03-23
US5373171A (en) 1994-12-13
EP0635874B1 (de) 1998-12-02
EP0282075B1 (de) 1995-02-08
DE3856475T2 (de) 2001-11-08

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)