DE3855672D1 - Photoempfindliche Vorrichtung - Google Patents

Photoempfindliche Vorrichtung

Info

Publication number
DE3855672D1
DE3855672D1 DE3855672T DE3855672T DE3855672D1 DE 3855672 D1 DE3855672 D1 DE 3855672D1 DE 3855672 T DE3855672 T DE 3855672T DE 3855672 T DE3855672 T DE 3855672T DE 3855672 D1 DE3855672 D1 DE 3855672D1
Authority
DE
Germany
Prior art keywords
photosensitive device
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855672T
Other languages
English (en)
Other versions
DE3855672T2 (de
Inventor
Hidemasa Mizutani
Shigeki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62206801A external-priority patent/JP2599726B2/ja
Priority claimed from JP62206804A external-priority patent/JPS6450461A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3855672D1 publication Critical patent/DE3855672D1/de
Publication of DE3855672T2 publication Critical patent/DE3855672T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
DE3855672T 1987-08-20 1988-08-19 Photoempfindliche Vorrichtung Expired - Fee Related DE3855672T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62206801A JP2599726B2 (ja) 1987-08-20 1987-08-20 受光装置
JP62206804A JPS6450461A (en) 1987-08-20 1987-08-20 Photodetector

Publications (2)

Publication Number Publication Date
DE3855672D1 true DE3855672D1 (de) 1997-01-02
DE3855672T2 DE3855672T2 (de) 1997-04-03

Family

ID=26515882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855672T Expired - Fee Related DE3855672T2 (de) 1987-08-20 1988-08-19 Photoempfindliche Vorrichtung

Country Status (4)

Country Link
US (1) US5043785A (de)
EP (1) EP0304335B1 (de)
AU (1) AU609508B2 (de)
DE (1) DE3855672T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156980A (en) * 1989-03-10 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making a rear surface incident type photodetector
JPH02237154A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 光検知装置
JP2773930B2 (ja) * 1989-10-31 1998-07-09 三菱電機株式会社 光検知装置
IL96623A0 (en) * 1989-12-26 1991-09-16 Gen Electric Low capacitance,large area semiconductor photodetector and photodetector system
JP2838318B2 (ja) * 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
DE69232432T2 (de) 1991-11-20 2002-07-18 Canon Kk Verfahren zur Herstellung einer Halbleiteranordnung
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
JP3630894B2 (ja) * 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 電荷転送半導体装置およびその作製方法並びにイメージセンサ
US6747638B2 (en) 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
US6309905B1 (en) * 2000-01-31 2001-10-30 Taiwan Semiconductor Manufacturing Company Stripe photodiode element with high quantum efficiency for an image sensor cell
US6323054B1 (en) 2000-05-31 2001-11-27 Taiwan Semiconductor Manufacturing Company Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
GB2439098A (en) * 2006-06-12 2007-12-19 Sharp Kk Image sensor and display
GB2439118A (en) * 2006-06-12 2007-12-19 Sharp Kk Image sensor and display
KR101832119B1 (ko) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8614495B2 (en) 2010-04-23 2013-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Back side defect reduction for back side illuminated image sensor
US8390089B2 (en) * 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA644569A (en) * 1962-07-10 Westinghouse Electric Corporation Phototransistor design
US3535532A (en) * 1964-06-29 1970-10-20 Texas Instruments Inc Integrated circuit including light source,photodiode and associated components
US4409422A (en) * 1974-11-08 1983-10-11 Sater Bernard L High intensity solar cell
JPS55128884A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor photodetector
US4236831A (en) * 1979-07-27 1980-12-02 Honeywell Inc. Semiconductor apparatus
GB2109991B (en) * 1981-11-17 1985-05-15 Standard Telephones Cables Ltd Photodetector
JPS60140752A (ja) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd 半導体光電変換装置
JPS60223174A (ja) * 1984-04-19 1985-11-07 Nec Corp 半導体光電子複合素子
JPS6189661A (ja) * 1984-10-09 1986-05-07 Fujitsu Ltd イメ−ジセンサの製造方法
JPS6267685A (ja) * 1985-09-20 1987-03-27 Toshiba Corp 画像計測装置における被検査物体の画像入力装置

Also Published As

Publication number Publication date
DE3855672T2 (de) 1997-04-03
US5043785A (en) 1991-08-27
EP0304335B1 (de) 1996-11-20
EP0304335A3 (de) 1989-12-06
EP0304335A2 (de) 1989-02-22
AU609508B2 (en) 1991-05-02
AU2116488A (en) 1989-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee