DE3851767D1 - Verfahren zum Sintern, Verfahren zur Schmelzschweissung, Höckerherstellung und Fühler. - Google Patents
Verfahren zum Sintern, Verfahren zur Schmelzschweissung, Höckerherstellung und Fühler.Info
- Publication number
- DE3851767D1 DE3851767D1 DE3851767T DE3851767T DE3851767D1 DE 3851767 D1 DE3851767 D1 DE 3851767D1 DE 3851767 T DE3851767 T DE 3851767T DE 3851767 T DE3851767 T DE 3851767T DE 3851767 D1 DE3851767 D1 DE 3851767D1
- Authority
- DE
- Germany
- Prior art keywords
- processes
- feelers
- hump
- production
- fusion welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 2
- 230000004927 fusion Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005245 sintering Methods 0.000 title 1
- 238000003466 welding Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H01L2924/01018—Argon [Ar]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Wire Bonding (AREA)
- Powder Metallurgy (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62063848A JPH0730362B2 (ja) | 1987-03-20 | 1987-03-20 | 電子部品及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851767D1 true DE3851767D1 (de) | 1994-11-17 |
DE3851767T2 DE3851767T2 (de) | 1995-02-16 |
Family
ID=13241162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851767T Expired - Fee Related DE3851767T2 (de) | 1987-03-20 | 1988-03-16 | Verfahren zum Sintern, Verfahren zur Schmelzschweissung, Höckerherstellung und Fühler. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4855102A (de) |
EP (1) | EP0283003B1 (de) |
JP (1) | JPH0730362B2 (de) |
DE (1) | DE3851767T2 (de) |
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US5147587A (en) * | 1986-10-17 | 1992-09-15 | Board Of Regents, The University Of Texas System | Method of producing parts and molds using composite ceramic powders |
US5296062A (en) * | 1986-10-17 | 1994-03-22 | The Board Of Regents, The University Of Texas System | Multiple material systems for selective beam sintering |
AU643700B2 (en) * | 1989-09-05 | 1993-11-25 | University Of Texas System, The | Multiple material systems and assisted powder handling for selective beam sintering |
US5156697A (en) * | 1989-09-05 | 1992-10-20 | Board Of Regents, The University Of Texas System | Selective laser sintering of parts by compound formation of precursor powders |
EP0714725B1 (de) * | 1989-09-05 | 1997-12-10 | The Board Of Regents, The University Of Texas System | Mehrmaterialsysteme zum Sintern mit selektiver Strahlung unter Anwendung von Pulver |
US5182170A (en) * | 1989-09-05 | 1993-01-26 | Board Of Regents, The University Of Texas System | Method of producing parts by selective beam interaction of powder with gas phase reactant |
US5284695A (en) * | 1989-09-05 | 1994-02-08 | Board Of Regents, The University Of Texas System | Method of producing high-temperature parts by way of low-temperature sintering |
JP2798281B2 (ja) * | 1989-10-31 | 1998-09-17 | 龍三 渡辺 | 粒子配列レーザー焼結方法及びその装置 |
JPH03156930A (ja) * | 1989-11-15 | 1991-07-04 | Sanyo Electric Co Ltd | 半導体装置 |
JP3100968B2 (ja) * | 1989-12-11 | 2000-10-23 | 日本ウエルディング・ロッド株式会社 | グリーンボディからバインダーを除去する方法 |
US5343014A (en) * | 1990-07-12 | 1994-08-30 | Nippondenso Co., Ltd. | Method of welding metals of different kind by laser |
DE4035229A1 (de) * | 1990-11-06 | 1992-05-07 | Anton Schloegel | Mittel zur verbesserung der sicht beim schweissen |
US5155321A (en) * | 1990-11-09 | 1992-10-13 | Dtm Corporation | Radiant heating apparatus for providing uniform surface temperature useful in selective laser sintering |
US5274210A (en) * | 1993-03-02 | 1993-12-28 | Digital Equipment Corporation | Laser bonding highly reflective surfaces |
US5393482A (en) * | 1993-10-20 | 1995-02-28 | United Technologies Corporation | Method for performing multiple beam laser sintering employing focussed and defocussed laser beams |
US5427733A (en) * | 1993-10-20 | 1995-06-27 | United Technologies Corporation | Method for performing temperature-controlled laser sintering |
JPH06340901A (ja) * | 1994-03-28 | 1994-12-13 | Hitachi Ltd | 焼結方法 |
US5783025A (en) * | 1994-06-07 | 1998-07-21 | Texas Instruments Incorporated | Optical diebonding for semiconductor devices |
US5745834A (en) * | 1995-09-19 | 1998-04-28 | Rockwell International Corporation | Free form fabrication of metallic components |
TW365057B (en) * | 1997-12-31 | 1999-07-21 | Ind Tech Res Inst | Manufacturing method for micro-mirror on the silicon substrate |
US6519842B2 (en) * | 1999-12-10 | 2003-02-18 | Ebara Corporation | Method for mounting semiconductor device |
JP4736019B2 (ja) * | 2003-11-27 | 2011-07-27 | 独立行政法人産業技術総合研究所 | 成形体の製造方法 |
US7820097B2 (en) | 2004-11-24 | 2010-10-26 | Ncc Nano, Llc | Electrical, plating and catalytic uses of metal nanomaterial compositions |
GB0511460D0 (en) * | 2005-06-06 | 2005-07-13 | Univ Liverpool | Process |
US8945686B2 (en) | 2007-05-24 | 2015-02-03 | Ncc | Method for reducing thin films on low temperature substrates |
FR2911995B1 (fr) * | 2007-01-30 | 2009-03-06 | 3D Plus Sa Sa | Procede d'interconnexion de tranches electroniques |
US20090004368A1 (en) * | 2007-06-29 | 2009-01-01 | Weyerhaeuser Co. | Systems and methods for curing a deposited layer on a substrate |
JP2010538473A (ja) * | 2007-08-31 | 2010-12-09 | リアクティブ ナノテクノロジーズ,インク. | 電子部品の低温ボンディング法 |
TWI401205B (zh) * | 2008-01-31 | 2013-07-11 | Ind Tech Res Inst | 利用光熱效應製作應用基板的方法 |
DE102009024962A1 (de) * | 2009-06-12 | 2010-12-30 | Sitec Industrietechnologie Gmbh | Verfahren zur partiellen stofflichen Verbindung von Bauteilen mit schmelzbaren Materialen |
JP5137993B2 (ja) * | 2010-04-14 | 2013-02-06 | 株式会社松浦機械製作所 | 人工骨製造方法及び当該方法によって製造された人工骨 |
JP4859996B1 (ja) * | 2010-11-26 | 2012-01-25 | 田中貴金属工業株式会社 | 金属配線形成用の転写基板による金属配線の形成方法 |
JP5202714B1 (ja) * | 2011-11-18 | 2013-06-05 | 田中貴金属工業株式会社 | 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法 |
US9281242B2 (en) * | 2012-10-25 | 2016-03-08 | Nanya Technology Corp. | Through silicon via stacked structure and a method of manufacturing the same |
WO2015077162A1 (en) * | 2013-11-19 | 2015-05-28 | United Technologies Corporation | Method for fabricating a metal-ceramic composite article |
JP6217760B2 (ja) * | 2013-11-20 | 2017-10-25 | 株式会社村田製作所 | セラミックの焼成方法および積層セラミック電子部品の製造方法 |
US9053972B1 (en) | 2013-11-21 | 2015-06-09 | Freescale Semiconductor, Inc. | Pillar bump formed using spot-laser |
TWI498061B (zh) * | 2013-12-20 | 2015-08-21 | Luxshare Ict Co Ltd | And a method of manufacturing a conductor line on an insulating substrate |
US9474162B2 (en) | 2014-01-10 | 2016-10-18 | Freescale Semiocnductor, Inc. | Circuit substrate and method of manufacturing same |
JP6044849B2 (ja) * | 2014-03-24 | 2016-12-14 | コニカミノルタ株式会社 | 処理装置および粒子固定方法 |
EP3219467B2 (de) * | 2014-09-19 | 2023-08-16 | FUJI Corporation | Herstellungsvorrichtung und herstellungsverfahren |
US9508667B2 (en) * | 2014-12-23 | 2016-11-29 | Intel Corporation | Formation of solder and copper interconnect structures and associated techniques and configurations |
CN104907568B (zh) * | 2015-06-25 | 2017-01-11 | 武汉大学 | 基于飞秒激光复合技术的压阻式厚膜压力传感器制备方法 |
JP7011548B2 (ja) | 2017-07-14 | 2022-01-26 | キヤノン株式会社 | セラミックス造形用粉体、セラミックス造形物、およびその製造方法 |
CN110944814B (zh) | 2017-07-14 | 2022-04-12 | 佳能株式会社 | 陶瓷制造用粉体、陶瓷制造物及其制造方法 |
JP6904429B2 (ja) | 2017-10-31 | 2021-07-14 | 株式会社Ihi | 三次元積層造形物製造装置及び三次元積層造形物製造方法 |
JP2019181930A (ja) * | 2018-04-03 | 2019-10-24 | キヤノン株式会社 | セラミックス粉体、セラミックス粉体の製造方法およびセラミックス粉体を用いたセラミックス構造物の製造方法 |
CN108555284B (zh) * | 2018-06-26 | 2019-07-12 | 西安欧中材料科技有限公司 | 一种激光选区熔化用金属球形粉末的后处理方法 |
CN108899190B (zh) * | 2018-06-29 | 2020-12-22 | 烟台首钢磁性材料股份有限公司 | 一种梯度钕铁硼磁体及其制作方法 |
US11453618B2 (en) * | 2018-11-06 | 2022-09-27 | Utility Global, Inc. | Ceramic sintering |
WO2020096768A1 (en) * | 2018-11-08 | 2020-05-14 | Exxonmobil Research And Engineering Company | Species extraction apparatus comprising an additively manufactured matrix structure for using an absorptive liquid on said matrix structure |
TW202034478A (zh) | 2019-02-04 | 2020-09-16 | 日商索尼半導體解決方案公司 | 電子裝置 |
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US1848438A (en) * | 1926-03-27 | 1932-03-08 | Mallory & Co Inc P R | Alloy material for electrical contacts |
US2470034A (en) * | 1945-11-27 | 1949-05-10 | Mallory & Co Inc P R | Electric contact formed of a ruthenium composition |
US3606766A (en) * | 1969-06-26 | 1971-09-21 | Engelhard Min & Chem | Gold finger article composed of compressed and sintered fine gold powder and a refractory oxide |
US4344905A (en) * | 1977-10-07 | 1982-08-17 | Ferranti Limited | Gas lasers |
US4340618A (en) * | 1981-03-20 | 1982-07-20 | International Business Machines Corporation | Process for forming refractory metal layers on ceramic substrate |
US4657169A (en) * | 1984-06-11 | 1987-04-14 | Vanzetti Systems, Inc. | Non-contact detection of liquefaction in meltable materials |
JPS6169946A (ja) * | 1984-09-13 | 1986-04-10 | Toyota Motor Corp | 動弁系摺動部材とその製造方法 |
DE3445613C1 (de) * | 1984-12-14 | 1985-07-11 | Jürgen 6074 Rödermark Wisotzki | Verfahren und Vorrichtung zur spanlosen Herstellung schmaler,laenglicher Werkstuecke aus Metall mittels Laserstrahls |
-
1987
- 1987-03-20 JP JP62063848A patent/JPH0730362B2/ja not_active Expired - Lifetime
-
1988
- 1988-03-16 DE DE3851767T patent/DE3851767T2/de not_active Expired - Fee Related
- 1988-03-16 EP EP88104205A patent/EP0283003B1/de not_active Expired - Lifetime
- 1988-03-21 US US07/171,461 patent/US4855102A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4855102A (en) | 1989-08-08 |
JPH0730362B2 (ja) | 1995-04-05 |
DE3851767T2 (de) | 1995-02-16 |
EP0283003A2 (de) | 1988-09-21 |
EP0283003A3 (en) | 1990-04-04 |
EP0283003B1 (de) | 1994-10-12 |
JPS63230802A (ja) | 1988-09-27 |
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