DE3789462T2 - Lichtempfindliches Element für Elektrophotographie. - Google Patents
Lichtempfindliches Element für Elektrophotographie.Info
- Publication number
- DE3789462T2 DE3789462T2 DE3789462T DE3789462T DE3789462T2 DE 3789462 T2 DE3789462 T2 DE 3789462T2 DE 3789462 T DE3789462 T DE 3789462T DE 3789462 T DE3789462 T DE 3789462T DE 3789462 T2 DE3789462 T2 DE 3789462T2
- Authority
- DE
- Germany
- Prior art keywords
- electrophotography
- photosensitive element
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/0825—Silicon-based comprising five or six silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
- G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/0825—Silicon-based comprising five or six silicon-based layers
- G03G5/08257—Silicon-based comprising five or six silicon-based layers at least one with varying composition
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2254686 | 1986-02-04 | ||
JP2460486 | 1986-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3789462D1 DE3789462D1 (de) | 1994-05-05 |
DE3789462T2 true DE3789462T2 (de) | 1994-08-04 |
Family
ID=26359791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3789462T Expired - Lifetime DE3789462T2 (de) | 1986-02-04 | 1987-01-30 | Lichtempfindliches Element für Elektrophotographie. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4792509A (de) |
EP (1) | EP0232145B1 (de) |
CN (1) | CN1011627B (de) |
DE (1) | DE3789462T2 (de) |
ES (1) | ES2053526T3 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4971878A (en) * | 1988-04-04 | 1990-11-20 | Sharp Kabushiki Kaisha | Amorphous silicon photosensitive member for use in electrophotography |
US5284730A (en) * | 1990-10-24 | 1994-02-08 | Canon Kabushiki Kaisha | Electrophotographic light-receiving member |
JP2876545B2 (ja) * | 1990-10-24 | 1999-03-31 | キヤノン株式会社 | 光受容部材 |
CN100545757C (zh) * | 2003-07-31 | 2009-09-30 | 佳能株式会社 | 电子照相感光体 |
KR100571780B1 (ko) * | 2003-10-17 | 2006-04-18 | 삼성전자주식회사 | 감광유닛의 하우징조립체 |
CN104810454A (zh) * | 2015-05-12 | 2015-07-29 | 中国科学院上海微系统与信息技术研究所 | 一种半导体材料、半导体薄膜及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849770B2 (ja) * | 1978-05-15 | 1983-11-07 | 三洋電機株式会社 | 除霜装置 |
JPS58127934A (ja) * | 1982-01-25 | 1983-07-30 | Sharp Corp | 電子写真感光体 |
JPS58163956A (ja) * | 1982-03-25 | 1983-09-28 | Canon Inc | 電子写真用光導電部材 |
JPH0614189B2 (ja) * | 1983-04-14 | 1994-02-23 | キヤノン株式会社 | 電子写真用光導電部材 |
JPS6126053A (ja) * | 1984-07-16 | 1986-02-05 | Minolta Camera Co Ltd | 電子写真感光体 |
US4678731A (en) * | 1985-06-25 | 1987-07-07 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen |
-
1987
- 1987-01-30 EP EP87300836A patent/EP0232145B1/de not_active Expired - Lifetime
- 1987-01-30 ES ES87300836T patent/ES2053526T3/es not_active Expired - Lifetime
- 1987-01-30 DE DE3789462T patent/DE3789462T2/de not_active Expired - Lifetime
- 1987-02-02 US US07/010,001 patent/US4792509A/en not_active Expired - Lifetime
- 1987-02-03 CN CN87101883A patent/CN1011627B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3789462D1 (de) | 1994-05-05 |
ES2053526T3 (es) | 1994-08-01 |
US4792509A (en) | 1988-12-20 |
AU616856B2 (en) | 1991-11-07 |
AU6823887A (en) | 1987-08-06 |
EP0232145A3 (en) | 1988-11-30 |
CN87101883A (zh) | 1988-04-27 |
EP0232145B1 (de) | 1994-03-30 |
EP0232145A2 (de) | 1987-08-12 |
CN1011627B (zh) | 1991-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |