DE3785578T2 - Halbisolierende, auf iii-v-elementen basierende materialien. - Google Patents

Halbisolierende, auf iii-v-elementen basierende materialien.

Info

Publication number
DE3785578T2
DE3785578T2 DE8888900208T DE3785578T DE3785578T2 DE 3785578 T2 DE3785578 T2 DE 3785578T2 DE 8888900208 T DE8888900208 T DE 8888900208T DE 3785578 T DE3785578 T DE 3785578T DE 3785578 T2 DE3785578 T2 DE 3785578T2
Authority
DE
Germany
Prior art keywords
titanium
indium
process according
organometallic
trialkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888900208T
Other languages
German (de)
English (en)
Other versions
DE3785578D1 (de
Inventor
Gomperz Dentai
Howard Joyner
William Weidman
Leon Zilko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/058,099 external-priority patent/US4782034A/en
Priority claimed from US07/059,133 external-priority patent/US4830982A/en
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3785578D1 publication Critical patent/DE3785578D1/de
Publication of DE3785578T2 publication Critical patent/DE3785578T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8888900208T 1986-12-16 1987-12-09 Halbisolierende, auf iii-v-elementen basierende materialien. Expired - Lifetime DE3785578T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US94245286A 1986-12-16 1986-12-16
US07/058,099 US4782034A (en) 1987-06-04 1987-06-04 Semi-insulating group III-V based compositions doped using bis arene titanium sources
US07/059,133 US4830982A (en) 1986-12-16 1987-06-04 Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
PCT/US1987/003283 WO1988004830A1 (en) 1986-12-16 1987-12-09 Semi-insulating group iii-v based compositions

Publications (2)

Publication Number Publication Date
DE3785578D1 DE3785578D1 (de) 1993-05-27
DE3785578T2 true DE3785578T2 (de) 1993-07-29

Family

ID=27369392

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888900208T Expired - Lifetime DE3785578T2 (de) 1986-12-16 1987-12-09 Halbisolierende, auf iii-v-elementen basierende materialien.

Country Status (5)

Country Link
EP (1) EP0293439B1 (enExample)
JP (1) JPH01501989A (enExample)
CA (1) CA1291926C (enExample)
DE (1) DE3785578T2 (enExample)
WO (1) WO1988004830A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4122473A1 (de) * 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von titan, zirkonium oder hafnium enthaltenden schichten
AU2000246295A1 (en) * 2000-02-24 2001-09-03 Ovchinnikov, Vyacheslav Anatolievich Method for crystalline growth in epitaxial heterostructures based on gallium nitride
US7135715B2 (en) * 2004-01-07 2006-11-14 Cree, Inc. Co-doping for fermi level control in semi-insulating Group III nitrides
JP2015149346A (ja) * 2014-02-05 2015-08-20 三菱電機株式会社 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
EP0293439A1 (en) 1988-12-07
JPH0534819B2 (enExample) 1993-05-25
EP0293439B1 (en) 1993-04-21
CA1291926C (en) 1991-11-12
DE3785578D1 (de) 1993-05-27
JPH01501989A (ja) 1989-07-06
WO1988004830A1 (en) 1988-06-30

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