DE3782240D1 - Schnelle parallelabtastung mit ionenstrahlen mit einer bipolaren magnetischen linse mit uneinheitlichem feld. - Google Patents
Schnelle parallelabtastung mit ionenstrahlen mit einer bipolaren magnetischen linse mit uneinheitlichem feld.Info
- Publication number
- DE3782240D1 DE3782240D1 DE8787905709T DE3782240T DE3782240D1 DE 3782240 D1 DE3782240 D1 DE 3782240D1 DE 8787905709 T DE8787905709 T DE 8787905709T DE 3782240 T DE3782240 T DE 3782240T DE 3782240 D1 DE3782240 D1 DE 3782240D1
- Authority
- DE
- Germany
- Prior art keywords
- ion beam
- magnetic lens
- uniform field
- parallel scan
- bipolar magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Tubes For Measurement (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/899,966 US4745281A (en) | 1986-08-25 | 1986-08-25 | Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field |
PCT/US1987/002135 WO1988001731A1 (en) | 1986-08-25 | 1987-08-24 | Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3782240D1 true DE3782240D1 (de) | 1992-11-19 |
DE3782240T2 DE3782240T2 (de) | 1993-02-25 |
Family
ID=25411787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787905709T Expired - Fee Related DE3782240T2 (de) | 1986-08-25 | 1987-08-24 | Schnelle parallelabtastung mit ionenstrahlen mit einer bipolaren magnetischen linse mit uneinheitlichem feld. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4745281A (de) |
EP (1) | EP0278969B1 (de) |
JP (1) | JPH01501187A (de) |
AT (1) | ATE81566T1 (de) |
DE (1) | DE3782240T2 (de) |
WO (1) | WO1988001731A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE463055B (sv) * | 1989-02-10 | 1990-10-01 | Scanditronix Ab | Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner |
US5053627A (en) * | 1990-03-01 | 1991-10-01 | Ibis Technology Corporation | Apparatus for ion implantation |
JP2648642B2 (ja) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5438203A (en) * | 1994-06-10 | 1995-08-01 | Nissin Electric Company | System and method for unipolar magnetic scanning of heavy ion beams |
US5481116A (en) * | 1994-06-10 | 1996-01-02 | Ibis Technology Corporation | Magnetic system and method for uniformly scanning heavy ion beams |
US5557178A (en) * | 1994-11-01 | 1996-09-17 | Cornell Research Foundation, Inc. | Circular particle accelerator with mobius twist |
US5672879A (en) * | 1995-06-12 | 1997-09-30 | Glavish; Hilton F. | System and method for producing superimposed static and time-varying magnetic fields |
US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
AU1067799A (en) * | 1997-10-07 | 1999-04-27 | Sti Optronics Inc. | Magnetic separator for linear dispersion and method for producing the same |
US6521895B1 (en) | 1999-10-22 | 2003-02-18 | Varian Semiconductor Equipment Associates, Inc. | Wide dynamic range ion beam scanners |
US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
AU2001270133A1 (en) | 2000-06-22 | 2002-01-02 | Proteros, Llc | Ion implantation uniformity correction using beam current control |
US6762423B2 (en) * | 2002-11-05 | 2004-07-13 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion beam neutralization in magnets |
US6933511B2 (en) * | 2003-11-18 | 2005-08-23 | Atomic Energy Council Institute Of Nuclear Energy Research | Ion implanting apparatus |
JP4646574B2 (ja) * | 2004-08-30 | 2011-03-09 | 株式会社日立製作所 | データ処理システム |
US8164070B2 (en) * | 2008-12-05 | 2012-04-24 | Nissin Ion Equipment Co., Ltd. | Collimator magnet for ion implantation system |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509097A (de) * | 1951-02-10 | |||
US3122631A (en) * | 1960-02-05 | 1964-02-25 | Atlas Werke Ag | Apparatus for focusing a line type ion beam on a mass spectrometer analyzer |
US3379911A (en) * | 1965-06-11 | 1968-04-23 | High Voltage Engineering Corp | Particle accelerator provided with an adjustable 270deg. non-dispersive magnetic charged-particle beam bender |
FR2036373A5 (de) * | 1969-03-12 | 1970-12-24 | Thomson Csf | |
GB1280013A (en) * | 1969-09-05 | 1972-07-05 | Atomic Energy Authority Uk | Improvements in or relating to apparatus bombarding a target with ions |
US3816748A (en) * | 1972-04-28 | 1974-06-11 | Alpha Ind Inc | Ion accelerator employing crossed-field selector |
US4021675A (en) * | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
US4017403A (en) * | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
JPS5836464B2 (ja) * | 1975-09-12 | 1983-08-09 | 株式会社島津製作所 | シツリヨウブンセキソウチ |
DE2702445C3 (de) * | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat |
US4117339A (en) * | 1977-07-01 | 1978-09-26 | Burroughs Corporation | Double deflection electron beam generator for employment in the fabrication of semiconductor and other devices |
NL182924C (nl) * | 1978-05-12 | 1988-06-01 | Philips Nv | Inrichting voor het implanteren van ionen in een trefplaat. |
US4276477A (en) * | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
JPS57182956A (en) * | 1981-05-07 | 1982-11-11 | Hitachi Ltd | Ion-implantation device |
US4447773A (en) * | 1981-06-22 | 1984-05-08 | California Institute Of Technology | Ion beam accelerator system |
US4433247A (en) * | 1981-09-28 | 1984-02-21 | Varian Associates, Inc. | Beam sharing method and apparatus for ion implantation |
FR2532112A1 (fr) * | 1982-08-17 | 1984-02-24 | Commissariat Energie Atomique | Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees |
US4587433A (en) * | 1984-06-27 | 1986-05-06 | Eaton Corporation | Dose control apparatus |
JPH0630237B2 (ja) * | 1984-09-10 | 1994-04-20 | 株式会社日立製作所 | イオン打込み装置 |
US4661712A (en) * | 1985-05-28 | 1987-04-28 | Varian Associates, Inc. | Apparatus for scanning a high current ion beam with a constant angle of incidence |
-
1986
- 1986-08-25 US US06/899,966 patent/US4745281A/en not_active Expired - Lifetime
-
1987
- 1987-08-24 AT AT87905709T patent/ATE81566T1/de not_active IP Right Cessation
- 1987-08-24 WO PCT/US1987/002135 patent/WO1988001731A1/en active IP Right Grant
- 1987-08-24 JP JP62505290A patent/JPH01501187A/ja active Granted
- 1987-08-24 EP EP87905709A patent/EP0278969B1/de not_active Expired
- 1987-08-24 DE DE8787905709T patent/DE3782240T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1988001731A1 (en) | 1988-03-10 |
EP0278969B1 (de) | 1992-10-14 |
EP0278969A1 (de) | 1988-08-24 |
DE3782240T2 (de) | 1993-02-25 |
EP0278969A4 (de) | 1988-12-12 |
ATE81566T1 (de) | 1992-10-15 |
JPH0568058B2 (de) | 1993-09-28 |
JPH01501187A (ja) | 1989-04-20 |
US4745281A (en) | 1988-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N. |
|
8339 | Ceased/non-payment of the annual fee |