DE3773061D1 - Oberflaechig bebilderter schutzlack. - Google Patents

Oberflaechig bebilderter schutzlack.

Info

Publication number
DE3773061D1
DE3773061D1 DE8787109212T DE3773061T DE3773061D1 DE 3773061 D1 DE3773061 D1 DE 3773061D1 DE 8787109212 T DE8787109212 T DE 8787109212T DE 3773061 T DE3773061 T DE 3773061T DE 3773061 D1 DE3773061 D1 DE 3773061D1
Authority
DE
Germany
Prior art keywords
protective lacquer
imaged
imaged protective
lacquer
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787109212T
Other languages
English (en)
Inventor
Robert David Allen
Kaolin N Chiong
Ming-Fea Chow
Scott Arthur Macdonald
Jer-Ming Yang
Carlton Grant Willson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3773061D1 publication Critical patent/DE3773061D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE8787109212T 1986-06-30 1987-06-26 Oberflaechig bebilderter schutzlack. Expired - Fee Related DE3773061D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/880,212 US4810601A (en) 1984-12-07 1986-06-30 Top imaged resists

Publications (1)

Publication Number Publication Date
DE3773061D1 true DE3773061D1 (de) 1991-10-24

Family

ID=25375739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787109212T Expired - Fee Related DE3773061D1 (de) 1986-06-30 1987-06-26 Oberflaechig bebilderter schutzlack.

Country Status (4)

Country Link
US (1) US4810601A (de)
EP (1) EP0251241B1 (de)
JP (1) JPS6371843A (de)
DE (1) DE3773061D1 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
DE3850151T2 (de) * 1987-03-09 1995-01-12 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung von Mustern.
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
US5015559A (en) * 1988-07-26 1991-05-14 Matsushita Electric Industrial Co., Ltd. Process for forming a fine resist pattern
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
JPH0299960A (ja) * 1988-10-06 1990-04-11 Matsushita Electric Ind Co Ltd パターン形成方法
JP2737225B2 (ja) * 1989-03-27 1998-04-08 松下電器産業株式会社 微細パターン形成材料およびパターン形成方法
EP0394738A3 (de) * 1989-04-24 1991-03-27 Siemens Aktiengesellschaft Vereinfachtes Mehrlagenphotoresistsystem
US5041362A (en) * 1989-07-06 1991-08-20 Texas Instruments Incorporated Dry developable resist etch chemistry
US4981770A (en) * 1989-07-28 1991-01-01 At&T Bell Laboratories Process for fabrication of device
US5217851A (en) * 1989-09-05 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Pattern forming method capable of providing an excellent pattern of high resolution power and high sensitivity
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5362606A (en) * 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
EP0451311B1 (de) * 1990-04-12 1999-03-10 Siemens Aktiengesellschaft Verfahren zur Erzeugung einer Resiststruktur
EP0453610B1 (de) * 1990-04-27 1996-06-26 Siemens Aktiengesellschaft Verfahren zur Erzeugung einer Resiststruktur
US5128223A (en) * 1990-06-15 1992-07-07 Hoechst Celanese Corp. Polymeric direct imaging holographic compositions
EP0909988A1 (de) * 1990-09-26 1999-04-21 Canon Kabushiki Kaisha Photolithographisches Verarbeitungsverfahren
US5824455A (en) * 1990-09-26 1998-10-20 Canon Kabushiki Kaisha Processing method and apparatus
JPH04359906A (ja) * 1991-06-07 1992-12-14 Shin Etsu Chem Co Ltd ポリ（パラ−ｔ−ブトキシカルボニルオキシスチレン）及びその製造方法
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
DE69208769T2 (de) * 1991-07-31 1996-07-18 Texas Instruments Inc Hochauflösendes lithographisches Verfahren
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5229256A (en) * 1991-12-06 1993-07-20 International Business Machines Corporation Process for generating positive-tone photoresist image
US5286607A (en) * 1991-12-09 1994-02-15 Chartered Semiconductor Manufacturing Pte Ltd. Bi-layer resist process for semiconductor processing
JP2951504B2 (ja) * 1992-06-05 1999-09-20 シャープ株式会社 シリル化平坦化レジスト及び平坦化方法並びに集積回路デバイスの製造方法
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
US5352330A (en) * 1992-09-30 1994-10-04 Texas Instruments Incorporated Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
JP2654339B2 (ja) * 1992-11-24 1997-09-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性レジスト組成物及び基板上にレジスト像を形成する方法
KR100200685B1 (ko) * 1992-12-04 1999-06-15 윤종용 포토리소그래피공정에 의한 미세패턴 형성방법
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
JP3389754B2 (ja) 1994-11-14 2003-03-24 松下電器産業株式会社 化学吸着膜の形成方法
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
US5702869A (en) * 1996-06-07 1997-12-30 Vanguard International Semiconductor Corporation Soft ashing method for removing fluorinated photoresists layers from semiconductor substrates
US6764808B2 (en) * 2002-02-27 2004-07-20 Advanced Micro Devices, Inc. Self-aligned pattern formation using wavelenghts
US7270940B2 (en) * 2002-12-18 2007-09-18 International Business Machines Corporation Method of structuring of a substrate
JP2006013216A (ja) * 2004-06-28 2006-01-12 Canon Inc 近接場露光によるレジストパターンの形成方法、及び該レジストパターンの形成方法を用いた基板の加工方法、デバイスの作製方法
US7977253B2 (en) * 2004-08-31 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8557647B2 (en) 2011-09-09 2013-10-15 International Business Machines Corporation Method for fabricating field effect transistor devices with high-aspect ratio mask
JP6465189B2 (ja) * 2016-07-21 2019-02-06 東京エレクトロン株式会社 半導体装置の製造方法及び真空処理装置
JP6922770B2 (ja) * 2017-02-22 2021-08-18 信越化学工業株式会社 パターン形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635130A (en) * 1979-08-31 1981-04-07 Fujitsu Ltd Resist material and method for forming resist pattern
US4508813A (en) * 1980-06-16 1985-04-02 Fujitsu Limited Method for producing negative resist images
JPS5844715A (ja) * 1981-09-11 1983-03-15 Fujitsu Ltd 微細パタ−ン形成方法
US4357369A (en) * 1981-11-10 1982-11-02 Rca Corporation Method of plasma etching a substrate
DE3151078A1 (de) * 1981-12-23 1983-07-28 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von reliefbildern
EP0091651B1 (de) * 1982-04-12 1988-08-03 Nippon Telegraph And Telephone Corporation Verfahren zur Herstellung von Mikrobildern
GB2121197A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
DE3231145A1 (de) * 1982-08-21 1984-02-23 Basf Ag, 6700 Ludwigshafen Negativ arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern
US4433044A (en) * 1982-11-15 1984-02-21 Rca Corporation Dry developable positive photoresists
US4430153A (en) * 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
GB8403698D0 (en) * 1984-02-13 1984-03-14 British Telecomm Semiconductor device fabrication
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation

Also Published As

Publication number Publication date
US4810601A (en) 1989-03-07
JPS6371843A (ja) 1988-04-01
EP0251241A2 (de) 1988-01-07
EP0251241A3 (en) 1989-01-11
EP0251241B1 (de) 1991-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee