DE3772120D1 - Transistoren mit heissen ladungstraegern. - Google Patents
Transistoren mit heissen ladungstraegern.Info
- Publication number
- DE3772120D1 DE3772120D1 DE8787200888T DE3772120T DE3772120D1 DE 3772120 D1 DE3772120 D1 DE 3772120D1 DE 8787200888 T DE8787200888 T DE 8787200888T DE 3772120 T DE3772120 T DE 3772120T DE 3772120 D1 DE3772120 D1 DE 3772120D1
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- hot carriers
- carriers
- hot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000969 carrier Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08612603A GB2191035A (en) | 1986-05-23 | 1986-05-23 | Hot charge-carrier transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3772120D1 true DE3772120D1 (de) | 1991-09-19 |
Family
ID=10598346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787200888T Expired - Lifetime DE3772120D1 (de) | 1986-05-23 | 1987-05-14 | Transistoren mit heissen ladungstraegern. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4797722A (de) |
EP (1) | EP0251352B1 (de) |
JP (1) | JPS62286276A (de) |
DE (1) | DE3772120D1 (de) |
GB (1) | GB2191035A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912539A (en) * | 1988-08-05 | 1990-03-27 | The University Of Michigan | Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier |
JPH0276262A (ja) * | 1988-09-12 | 1990-03-15 | Fujitsu Ltd | 半導体装置 |
US4999697A (en) * | 1988-09-14 | 1991-03-12 | At&T Bell Laboratories | Sequential-quenching resonant-tunneling transistor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3929527A (en) * | 1974-06-11 | 1975-12-30 | Us Army | Molecular beam epitaxy of alternating metal-semiconductor films |
DE2607940A1 (de) * | 1976-02-27 | 1977-09-08 | Max Planck Gesellschaft | Mehrschichtiges halbleiterbauelement |
GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
US4492971A (en) * | 1980-06-05 | 1985-01-08 | At&T Bell Laboratories | Metal silicide-silicon heterostructures |
JPS5842574A (ja) * | 1981-08-31 | 1983-03-12 | 株式会社東芝 | エレベ−タの位置検出装置 |
GB2118363A (en) * | 1982-04-08 | 1983-10-26 | Philips Electronic Associated | Hot-electron and hot-hole transistors |
EP0133342B1 (de) * | 1983-06-24 | 1989-11-29 | Nec Corporation | Halbleiterstruktur mit Übergitter hoher Trägerdichte |
CA1237824A (en) * | 1984-04-17 | 1988-06-07 | Takashi Mimura | Resonant tunneling semiconductor device |
JPS60242671A (ja) * | 1984-05-16 | 1985-12-02 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポ−ラトランジスタ |
GB8413726D0 (en) * | 1984-05-30 | 1984-07-04 | Gen Electric Co Plc | Transistors |
US4665412A (en) * | 1985-06-19 | 1987-05-12 | Ga Technologies Inc. | Coupled heterostructure superlattice devices |
-
1986
- 1986-05-23 GB GB08612603A patent/GB2191035A/en not_active Withdrawn
-
1987
- 1987-05-05 US US07/046,974 patent/US4797722A/en not_active Expired - Fee Related
- 1987-05-14 EP EP19870200888 patent/EP0251352B1/de not_active Expired
- 1987-05-14 DE DE8787200888T patent/DE3772120D1/de not_active Expired - Lifetime
- 1987-05-22 JP JP62124126A patent/JPS62286276A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB8612603D0 (en) | 1986-07-02 |
JPS62286276A (ja) | 1987-12-12 |
GB2191035A (en) | 1987-12-02 |
EP0251352B1 (de) | 1991-08-14 |
US4797722A (en) | 1989-01-10 |
EP0251352A1 (de) | 1988-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO874309D0 (no) | Varme-fuktighets-utveksler. | |
FI872335A0 (fi) | Bioreaktor. | |
FI873117A0 (fi) | Hopvikbar ihaolig artikel. | |
DE3778213D1 (de) | Zwischenuebertragungsgeraet. | |
FI880765A0 (fi) | Foer engaongsanvaendning avsedd vaetskeabsorberande artikel. | |
DE3775951D1 (de) | Heizgeraet. | |
FI872183A (fi) | Flexibelt roer. | |
DE3776462D1 (de) | Keilriemen mit querkoerpern. | |
DE3786363D1 (de) | Halbleiteranordnungen mit hoher beweglichkeit. | |
DE3853026D1 (de) | Transistor mit heissen Elektronen. | |
DE3785196D1 (de) | Bipolartransistor mit heterouebergang. | |
FI872867A (fi) | Speciellt foer transport av kyl- eller koeldvaetskor anvaendbart flexibelt roer. | |
DE3860836D1 (de) | Bipolarer transistor mit heterouebergang. | |
DE3771758D1 (de) | Kunststoffueberzogene lichtleitfaser. | |
DE3684475D1 (de) | Heizapparat. | |
NO875334D0 (no) | Taubane. | |
NO873816L (no) | Tricykliske forbindelser. | |
DE3786805T3 (de) | Heizvorrichtungen. | |
DE3781202D1 (de) | Transistoren mit heissen ladungstraegern. | |
DE3773276D1 (de) | Transistoranordnung. | |
FI874284A0 (fi) | Anordning vid skaopinredning. | |
ES2018552B3 (es) | Articulo interengranable. | |
DE3774932D1 (de) | Transistoren mit heissen ladungstraegern. | |
DE3780895D1 (de) | Komplementaerer feldeffekt-transistor mit isoliertem gate. | |
DE3772120D1 (de) | Transistoren mit heissen ladungstraegern. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |