DE3766122D1 - Suszeptor fuer dampfablagerung. - Google Patents

Suszeptor fuer dampfablagerung.

Info

Publication number
DE3766122D1
DE3766122D1 DE8787101875T DE3766122T DE3766122D1 DE 3766122 D1 DE3766122 D1 DE 3766122D1 DE 8787101875 T DE8787101875 T DE 8787101875T DE 3766122 T DE3766122 T DE 3766122T DE 3766122 D1 DE3766122 D1 DE 3766122D1
Authority
DE
Germany
Prior art keywords
susceptor
steam deposit
deposit
steam
deposit susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787101875T
Other languages
English (en)
Inventor
Eiichi Tosera-B-Apt Toya
Masayuki Tosera-C-Apt - Ohkawa
- Itoh
Yasumi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Application granted granted Critical
Publication of DE3766122D1 publication Critical patent/DE3766122D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
DE8787101875T 1986-02-17 1987-02-11 Suszeptor fuer dampfablagerung. Expired - Fee Related DE3766122D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61032223A JPH0666265B2 (ja) 1986-02-17 1986-02-17 半導体気相成長用サセプタ

Publications (1)

Publication Number Publication Date
DE3766122D1 true DE3766122D1 (de) 1990-12-20

Family

ID=12352954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787101875T Expired - Fee Related DE3766122D1 (de) 1986-02-17 1987-02-11 Suszeptor fuer dampfablagerung.

Country Status (3)

Country Link
EP (1) EP0233584B1 (de)
JP (1) JPH0666265B2 (de)
DE (1) DE3766122D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
JPH0492447A (ja) * 1990-08-08 1992-03-25 Shin Etsu Chem Co Ltd 無機薄膜の成膜方法
ITMI20031841A1 (it) * 2003-09-25 2005-03-26 Lpe Spa Suscettore per reattori epitassiali ad induzione.
JP2008086691A (ja) * 2006-10-05 2008-04-17 Univ Nihon 電動車椅子の機能及び機構
JP2008086692A (ja) * 2006-10-05 2008-04-17 Univ Nihon 電動車椅子の機能及び機構
US8021487B2 (en) * 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2322952C3 (de) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
US4499354A (en) * 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
JPS5998519A (ja) * 1982-11-27 1984-06-06 Toshiba Corp バレル型気相成長装置用サセプタ
JPS59115520A (ja) * 1982-12-23 1984-07-04 Toshiba Ceramics Co Ltd 半導体製品製造用治具
JPS6062110A (ja) * 1983-09-16 1985-04-10 Oki Electric Ind Co Ltd 薄膜形成装置
JPS60200519A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 発熱体

Also Published As

Publication number Publication date
EP0233584A1 (de) 1987-08-26
JPS62189726A (ja) 1987-08-19
EP0233584B1 (de) 1990-11-14
JPH0666265B2 (ja) 1994-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee