DE3751268D1 - Thyristortreibersystem. - Google Patents

Thyristortreibersystem.

Info

Publication number
DE3751268D1
DE3751268D1 DE3751268T DE3751268T DE3751268D1 DE 3751268 D1 DE3751268 D1 DE 3751268D1 DE 3751268 T DE3751268 T DE 3751268T DE 3751268 T DE3751268 T DE 3751268T DE 3751268 D1 DE3751268 D1 DE 3751268D1
Authority
DE
Germany
Prior art keywords
driver system
thyristor driver
thyristor
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3751268T
Other languages
English (en)
Other versions
DE3751268T2 (de
Inventor
Tsuneo C O Patent Divisi Ogura
Katsuhiko C O Patent Takigami
Akio C O Patent Divis Nakagawa
Tomokazu C O Patent Divi Domon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23176986A external-priority patent/JPS6386566A/ja
Priority claimed from JP394187A external-priority patent/JP2635565B2/ja
Priority claimed from JP4135987A external-priority patent/JPS63209166A/ja
Priority claimed from JP62041315A external-priority patent/JPS63209216A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3751268D1 publication Critical patent/DE3751268D1/de
Application granted granted Critical
Publication of DE3751268T2 publication Critical patent/DE3751268T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
DE3751268T 1986-09-30 1987-09-30 Thyristortreibersystem. Expired - Lifetime DE3751268T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23176986A JPS6386566A (ja) 1986-09-30 1986-09-30 ゲ−トタ−ンオフサイリスタ装置
JP394187A JP2635565B2 (ja) 1987-01-13 1987-01-13 半導体装置の駆動法
JP4135987A JPS63209166A (ja) 1987-02-26 1987-02-26 サイリスタ
JP62041315A JPS63209216A (ja) 1987-02-26 1987-02-26 ゲ−トタ−ンオフサイリスタの駆動方法および駆動装置

Publications (2)

Publication Number Publication Date
DE3751268D1 true DE3751268D1 (de) 1995-06-01
DE3751268T2 DE3751268T2 (de) 1995-08-31

Family

ID=27453978

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751268T Expired - Lifetime DE3751268T2 (de) 1986-09-30 1987-09-30 Thyristortreibersystem.

Country Status (3)

Country Link
US (1) US4821083A (de)
EP (1) EP0262958B1 (de)
DE (1) DE3751268T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132767A (en) * 1986-09-30 1992-07-21 Kabushiki Kaisha Toshiba Double gate GTO thyristor
US5168333A (en) * 1987-02-26 1992-12-01 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
JPH02291171A (ja) * 1989-03-14 1990-11-30 Siemens Ag ゲートターンオフサイリスタおよびその製造方法
US5030862A (en) * 1990-01-31 1991-07-09 Harris Corporation Turn-off circuit for gate turn off SCR
DE69332443T2 (de) * 1992-05-01 2003-06-26 Fuji Electric Co., Ltd. Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate
US5981982A (en) * 1994-03-09 1999-11-09 Driscoll; John Cuervo Dual gated power electronic switching devices
US8907372B2 (en) * 2012-10-19 2014-12-09 Lite-On Semiconductor Corp. Thyristor and method for the same
US9159790B2 (en) * 2014-02-18 2015-10-13 Silicon Power Corporation Device and method for controlling the turn-off of a solid state switch (SGTO)
KR102290384B1 (ko) 2015-02-16 2021-08-17 삼성전자주식회사 누설 전류 기반의 지연 회로
JP7210342B2 (ja) 2019-03-18 2023-01-23 株式会社東芝 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638042A (en) * 1969-07-31 1972-01-25 Borg Warner Thyristor with added gate and fast turn-off circuit
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS54757A (en) * 1977-06-03 1979-01-06 Kousuke Harada Low power driving system for magnetic core
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
DE3230721A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbaren stromquellen
JPS60247969A (ja) * 1984-05-23 1985-12-07 Toyo Electric Mfg Co Ltd 自己消弧形半導体素子
JPS6147667A (ja) * 1984-08-11 1986-03-08 Toyo Electric Mfg Co Ltd 静電誘導サイリスタの制御回路
JPS61182261A (ja) * 1985-02-08 1986-08-14 Toshiba Corp ゲ−トタ−ンオフサイリスタの駆動法
CH670528A5 (de) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
EP0262958B1 (de) 1995-04-26
EP0262958A2 (de) 1988-04-06
EP0262958A3 (en) 1989-12-06
US4821083A (en) 1989-04-11
DE3751268T2 (de) 1995-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)