DE3751134D1 - Simultanes Ätzen von Mehrschicht- und Bildstrukturen. - Google Patents

Simultanes Ätzen von Mehrschicht- und Bildstrukturen.

Info

Publication number
DE3751134D1
DE3751134D1 DE3751134T DE3751134T DE3751134D1 DE 3751134 D1 DE3751134 D1 DE 3751134D1 DE 3751134 T DE3751134 T DE 3751134T DE 3751134 T DE3751134 T DE 3751134T DE 3751134 D1 DE3751134 D1 DE 3751134D1
Authority
DE
Germany
Prior art keywords
multilayer
image structures
simultaneous etching
simultaneous
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3751134T
Other languages
English (en)
Other versions
DE3751134T2 (de
Inventor
Francis Charles Burns
Gary Richard Carden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3751134D1 publication Critical patent/DE3751134D1/de
Application granted granted Critical
Publication of DE3751134T2 publication Critical patent/DE3751134T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • ing And Chemical Polishing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE3751134T 1986-10-29 1987-10-23 Simultanes Ätzen von Mehrschicht- und Bildstrukturen. Expired - Fee Related DE3751134T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/924,487 US4684436A (en) 1986-10-29 1986-10-29 Method of simultaneously etching personality and select

Publications (2)

Publication Number Publication Date
DE3751134D1 true DE3751134D1 (de) 1995-04-13
DE3751134T2 DE3751134T2 (de) 1995-09-14

Family

ID=25450260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751134T Expired - Fee Related DE3751134T2 (de) 1986-10-29 1987-10-23 Simultanes Ätzen von Mehrschicht- und Bildstrukturen.

Country Status (4)

Country Link
US (1) US4684436A (de)
EP (1) EP0265872B1 (de)
JP (1) JPS63111187A (de)
DE (1) DE3751134T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179262A (en) * 1986-10-14 1993-01-12 Allergan, Inc. Manufacture of ophthalmic lenses by excimer laser
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
JPS63234548A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
CA2021110A1 (en) * 1989-09-05 1991-03-06 Colloptics, Inc. Laser shaping with an area patterning mask
GB9008580D0 (en) * 1990-04-17 1990-06-13 Pilkington Diffractive Lenses Manufacture of contact lenses
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5148319A (en) * 1991-02-25 1992-09-15 Hughes Aircraft Company System for fabricating micro optical elements
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
FR2694131B1 (fr) * 1992-07-21 1996-09-27 Balzers Hochvakuum Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu.
US5498850A (en) * 1992-09-11 1996-03-12 Philip Morris Incorporated Semiconductor electrical heater and method for making same
US5539175A (en) * 1994-03-21 1996-07-23 Litel Instruments Apparatus and process for optically ablated openings having designed profile
US5501925A (en) * 1994-05-27 1996-03-26 Litel Instruments High power masks and methods for manufacturing same
TW366367B (en) * 1995-01-26 1999-08-11 Ibm Sputter deposition of hydrogenated amorphous carbon film
US5591480A (en) * 1995-08-21 1997-01-07 Motorola, Inc. Method for fabricating metallization patterns on an electronic substrate
JPH09207343A (ja) * 1995-11-29 1997-08-12 Matsushita Electric Ind Co Ltd レーザ加工方法
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6080959A (en) * 1999-03-12 2000-06-27 Lexmark International, Inc. System and method for feature compensation of an ablated inkjet nozzle plate
US6495239B1 (en) 1999-12-10 2002-12-17 International Business Corporation Dielectric structure and method of formation
US6834423B2 (en) * 2000-07-31 2004-12-28 Canon Kabushiki Kaisha Method of manufacturing a liquid discharge head
TW449929B (en) * 2000-08-02 2001-08-11 Ind Tech Res Inst Structure and manufacturing method of amorphous-silicon thin film transistor array
US6748994B2 (en) 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US6677552B1 (en) * 2001-11-30 2004-01-13 Positive Light, Inc. System and method for laser micro-machining
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US7645300B2 (en) 2004-02-02 2010-01-12 Visiogen, Inc. Injector for intraocular lens system
US20080182179A1 (en) * 2007-01-25 2008-07-31 Allied Integrated Patterning Corp. Gray tone mask and method for manufacturing the same
US8008209B2 (en) * 2007-10-24 2011-08-30 International Business Machines Corporation Thermal gradient control of high aspect ratio etching and deposition processes
US9184369B2 (en) 2008-09-18 2015-11-10 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
EP3576137A1 (de) * 2008-09-18 2019-12-04 FUJIFILM SonoSite, Inc. Ultraschallwandler
US9173047B2 (en) 2008-09-18 2015-10-27 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
DE102008058535A1 (de) * 2008-11-21 2010-05-27 Tesa Se Verfahren zur Materialbearbeitung mit energiereicher Strahlung
US20110115047A1 (en) * 2009-11-13 2011-05-19 Francois Hebert Semiconductor process using mask openings of varying widths to form two or more device structures
US8633115B2 (en) * 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US20160074968A1 (en) * 2014-09-11 2016-03-17 Suss Microtec Photonic Systems Inc. Laser etching system including mask reticle for multi-depth etching
US9730625B2 (en) 2015-03-02 2017-08-15 Verily Life Sciences Llc Automated blood sampling device
US10765361B2 (en) 2015-03-02 2020-09-08 Verily Life Sciences Llc Automated sequential injection and blood draw

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3649393A (en) * 1970-06-12 1972-03-14 Ibm Variable depth etching of film layers using variable exposures of photoresists
US3823015A (en) * 1973-01-02 1974-07-09 Collins Radio Co Photo-masking process
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4151072A (en) * 1977-05-16 1979-04-24 Phillips Petroleum Company Reclaiming used lubricating oils
US4374911A (en) * 1978-04-28 1983-02-22 International Business Machines Corporation Photo method of making tri-level density photomask
JPS55145178A (en) * 1979-05-02 1980-11-12 Agency Of Ind Science & Technol Precision working method of solid surface
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
AT382040B (de) * 1983-03-01 1986-12-29 Guenther Stangl Verfahren zur herstellung von optisch strukturierten filtern fuer elektromagnetische strahlung und optisch strukturierter filter
US4508749A (en) * 1983-12-27 1985-04-02 International Business Machines Corporation Patterning of polyimide films with ultraviolet light
US4490211A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced chemical etching of metals with excimer lasers
US4490210A (en) * 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced dry chemical etching of metals
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select

Also Published As

Publication number Publication date
US4684436A (en) 1987-08-04
EP0265872A2 (de) 1988-05-04
EP0265872B1 (de) 1995-03-08
DE3751134T2 (de) 1995-09-14
JPS63111187A (ja) 1988-05-16
JPS6411717B2 (de) 1989-02-27
EP0265872A3 (en) 1990-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee