DE3750224D1 - Detektorpufferplatte. - Google Patents

Detektorpufferplatte.

Info

Publication number
DE3750224D1
DE3750224D1 DE3750224T DE3750224T DE3750224D1 DE 3750224 D1 DE3750224 D1 DE 3750224D1 DE 3750224 T DE3750224 T DE 3750224T DE 3750224 T DE3750224 T DE 3750224T DE 3750224 D1 DE3750224 D1 DE 3750224D1
Authority
DE
Germany
Prior art keywords
module
buffer board
detector elements
array segment
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750224T
Other languages
English (en)
Other versions
DE3750224T2 (de
Inventor
Charles Schmitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grumman Corp
Original Assignee
Grumman Aerospace Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grumman Aerospace Corp filed Critical Grumman Aerospace Corp
Application granted granted Critical
Publication of DE3750224D1 publication Critical patent/DE3750224D1/de
Publication of DE3750224T2 publication Critical patent/DE3750224T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
DE3750224T 1987-03-23 1987-12-11 Detektorpufferplatte. Expired - Fee Related DE3750224T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/034,143 US4792672A (en) 1985-04-12 1987-03-23 Detector buffer board
PCT/US1987/003337 WO1988007764A1 (en) 1987-03-23 1987-12-11 Detector buffer board

Publications (2)

Publication Number Publication Date
DE3750224D1 true DE3750224D1 (de) 1994-08-18
DE3750224T2 DE3750224T2 (de) 1994-11-24

Family

ID=21874581

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750224T Expired - Fee Related DE3750224T2 (de) 1987-03-23 1987-12-11 Detektorpufferplatte.

Country Status (7)

Country Link
US (1) US4792672A (de)
EP (1) EP0308465B1 (de)
JP (1) JP2838114B2 (de)
AT (1) ATE108577T1 (de)
CA (1) CA1264836A (de)
DE (1) DE3750224T2 (de)
WO (1) WO1988007764A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231304A (en) * 1989-07-27 1993-07-27 Grumman Aerospace Corporation Framed chip hybrid stacked layer assembly
US5013687A (en) * 1989-07-27 1991-05-07 Grumman Aerospace Corporation Framed chip hybrid stacked layer assembly
US5315147A (en) * 1989-09-25 1994-05-24 Grumman Aerospace Corporation Monolithic focal plane array
US4988641A (en) * 1989-10-10 1991-01-29 Grumman Aerospace Corporation Graphotaxially forming a photosensitive detector array
US5013919A (en) * 1989-10-17 1991-05-07 Grumman Aerospace Corporation Detector element signal comparator system
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays
US5036203A (en) * 1989-12-20 1991-07-30 Grumman Aerospace Corporation Superimposed detector arrays having optical filters
US5075238A (en) * 1990-04-13 1991-12-24 Grumman Aerospace Corporation Detector interface device
US5030828A (en) * 1990-06-25 1991-07-09 Grumman Aerospace Corporation Recessed element photosensitive detector array with optical isolation
US5149671A (en) * 1990-12-03 1992-09-22 Grumman Aerospace Corporation Method for forming multilayer indium bump contact
US5138164A (en) * 1991-07-15 1992-08-11 Grumman Aerospace Corporation Infrared detector subarray with integral optical filter
FR2715250B1 (fr) * 1994-01-19 1996-04-05 Commissariat Energie Atomique Dispositif tridimensionnel de détection de rayonnement et procédé de fabrication de ce dispositif.
US5493096A (en) * 1994-05-10 1996-02-20 Grumman Aerospace Corporation Thin substrate micro-via interconnect
US5621193A (en) * 1995-05-23 1997-04-15 Northrop Grumman Corporation Ceramic edge connect process
JP5105736B2 (ja) * 2005-10-31 2012-12-26 株式会社東芝 プリント回路板、電子機器、およびプリント回路板の製造方法
FR2902927B1 (fr) * 2006-06-27 2008-12-19 Commissariat Energie Atomique Dispositif electronique tridimensionnel.

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879977A (en) * 1957-07-11 1959-03-31 Trought Associates Inc Mounting device
US3183121A (en) * 1961-06-02 1965-05-11 Kurt G F Moeller Thermoelectric generator with heat transfer and thermal expansion adaptor
CH391113A (de) * 1961-11-17 1965-04-30 Bbc Brown Boveri & Cie Lötverbindung für Halbleiterelemente
US3378357A (en) * 1965-10-20 1968-04-16 Chace Co W M Temperature compensated magnetic field responsive material
US3510362A (en) * 1966-10-20 1970-05-05 Teledyne Inc Thermoelectric assembly
US3378622A (en) * 1967-06-15 1968-04-16 Carborundum Co Method of joining electrode bodies of dissimilar thermal coefficients of expansion
US4059764A (en) * 1968-08-13 1977-11-22 Texas Instruments Incorporated Multi-element infra red sensors
US3970990A (en) * 1972-06-22 1976-07-20 Grumman Aerospace Corporation Adaptive imaging system
US3852714A (en) * 1972-06-22 1974-12-03 Eocom Corp Adaptive imaging system
US4019388A (en) * 1976-03-11 1977-04-26 Bailey Meter Company Glass to metal seal
US4081819A (en) * 1977-01-17 1978-03-28 Honeywell Inc. Mercury cadmium telluride device
JPS542067A (en) * 1977-06-07 1979-01-09 Hitachi Ltd Semiconductor device
US4304624A (en) * 1977-11-28 1981-12-08 Irvine Sensors Corporation Method of fabricating a multi-layer structure for detector array module
US4354107A (en) * 1977-11-28 1982-10-12 Irvine Sensors Corporation Detector array module-structure and fabrication
US4352715A (en) * 1977-11-28 1982-10-05 Irvine Sensors Corporation Detector array module fabrication
US4152175A (en) * 1978-07-24 1979-05-01 The United States Of America As Represented By The United States Department Of Energy Silicon solar cell assembly
US4315591A (en) * 1979-03-08 1982-02-16 General Electric Company Method for thermo-compression diffusion bonding a structured copper strain buffer to each side of a substrateless semiconductor device wafer
US4283755A (en) * 1980-02-05 1981-08-11 The United States Of America As Represented By The Secretary Of The Air Force Modulator multilayer detector
US4551629A (en) * 1980-09-16 1985-11-05 Irvine Sensors Corporation Detector array module-structure and fabrication
US4646128A (en) * 1980-09-16 1987-02-24 Irvine Sensors Corporation High-density electronic processing package--structure and fabrication
US4361717A (en) * 1980-12-05 1982-11-30 General Electric Company Fluid cooled solar powered photovoltaic cell
US4403238A (en) * 1980-12-08 1983-09-06 Irvine Sensors Corporation Detector array focal plane configuration
US4525921A (en) * 1981-07-13 1985-07-02 Irvine Sensors Corporation High-density electronic processing package-structure and fabrication
DE3224026A1 (de) * 1982-06-28 1983-12-29 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur auslese eines zweidimensionalen ladungsbildes mittels eines arrays
US4618763A (en) * 1985-04-12 1986-10-21 Grumman Aerospace Corporation Infrared focal plane module with stacked IC module body
US4659931A (en) * 1985-05-08 1987-04-21 Grumman Aerospace Corporation High density multi-layered integrated circuit package
US4675532A (en) * 1985-11-06 1987-06-23 Irvine Sensors Corporation Combined staring and scanning photodetector sensing system having both temporal and spatial filtering

Also Published As

Publication number Publication date
EP0308465B1 (de) 1994-07-13
CA1264836A (en) 1990-01-23
EP0308465A4 (en) 1991-09-18
ATE108577T1 (de) 1994-07-15
JPH01502950A (ja) 1989-10-05
WO1988007764A1 (en) 1988-10-06
EP0308465A1 (de) 1989-03-29
DE3750224T2 (de) 1994-11-24
JP2838114B2 (ja) 1998-12-16
US4792672A (en) 1988-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee