DE3712503A1 - Solarzelle - Google Patents
SolarzelleInfo
- Publication number
- DE3712503A1 DE3712503A1 DE19873712503 DE3712503A DE3712503A1 DE 3712503 A1 DE3712503 A1 DE 3712503A1 DE 19873712503 DE19873712503 DE 19873712503 DE 3712503 A DE3712503 A DE 3712503A DE 3712503 A1 DE3712503 A1 DE 3712503A1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- semiconductor substrate
- ohmic contacts
- silicon
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 30
- 239000002800 charge carrier Substances 0.000 claims description 23
- 238000002161 passivation Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 238000005215 recombination Methods 0.000 description 13
- 230000006798 recombination Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000012212 insulator Substances 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873712503 DE3712503A1 (de) | 1987-04-13 | 1987-04-13 | Solarzelle |
| DE8888105201T DE3874184D1 (de) | 1987-04-13 | 1988-03-30 | Solarzelle. |
| ES198888105201T ES2033972T3 (es) | 1987-04-13 | 1988-03-30 | Celula solar |
| EP88105201A EP0286917B1 (de) | 1987-04-13 | 1988-03-30 | Solarzelle |
| US07/176,286 US4886555A (en) | 1987-04-13 | 1988-03-31 | Solar cell |
| IN280/CAL/88A IN171031B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-04-13 | 1988-04-05 | |
| AU14522/88A AU600573B2 (en) | 1987-04-13 | 1988-04-12 | Solar cell |
| JP63091234A JPS6453468A (en) | 1987-04-13 | 1988-04-13 | Solar battery |
| CN88101994A CN1011452B (zh) | 1987-04-13 | 1988-04-13 | 太阳能电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873712503 DE3712503A1 (de) | 1987-04-13 | 1987-04-13 | Solarzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3712503A1 true DE3712503A1 (de) | 1988-11-03 |
Family
ID=6325536
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873712503 Withdrawn DE3712503A1 (de) | 1987-04-13 | 1987-04-13 | Solarzelle |
| DE8888105201T Expired - Fee Related DE3874184D1 (de) | 1987-04-13 | 1988-03-30 | Solarzelle. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8888105201T Expired - Fee Related DE3874184D1 (de) | 1987-04-13 | 1988-03-30 | Solarzelle. |
Country Status (8)
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE8915653U1 (de) * | 1989-05-25 | 1991-01-03 | Moreno, Dámaso, 5142 Hückelhoven | Folienartiges Material für eine Faltpackung und derartige Faltpackung |
| EP0525139A1 (de) * | 1991-02-04 | 1993-02-03 | Paul Scherrer Institut | Solarzelle |
| US5356488A (en) * | 1991-12-27 | 1994-10-18 | Rudolf Hezel | Solar cell and method for its manufacture |
| EP1094527A3 (de) * | 1993-07-29 | 2007-06-20 | Gerhard Dr. Willeke | Flaches Bauelement mit einem Gitternetz von Durchgangslöchern |
| DE19741832A1 (de) * | 1997-09-23 | 1999-03-25 | Inst Solarenergieforschung | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
| JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
| KR100831291B1 (ko) | 2001-01-31 | 2008-05-22 | 신에쯔 한도타이 가부시키가이샤 | 태양전지 및 태양전지의 제조방법 |
| JP4291521B2 (ja) * | 2001-03-23 | 2009-07-08 | 日本オプネクスト株式会社 | 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置 |
| US20070295381A1 (en) | 2004-03-29 | 2007-12-27 | Kyocera Corporation | Solar Cell Module and Photovoltaic Power Generator Using This |
| CN100437991C (zh) * | 2004-12-08 | 2008-11-26 | 鸿富锦精密工业（深圳）有限公司 | 散热装置及其制备方法 |
| US7754964B2 (en) | 2005-08-24 | 2010-07-13 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanocoax structures |
| US7649665B2 (en) | 2005-08-24 | 2010-01-19 | The Trustees Of Boston College | Apparatus and methods for optical switching using nanoscale optics |
| US7589880B2 (en) | 2005-08-24 | 2009-09-15 | The Trustees Of Boston College | Apparatus and methods for manipulating light using nanoscale cometal structures |
| JP2009506546A (ja) | 2005-08-24 | 2009-02-12 | ザ トラスティーズ オブ ボストン カレッジ | ナノスケール共金属構造を用いた太陽エネルギー変換のための装置および方法 |
| US7634162B2 (en) | 2005-08-24 | 2009-12-15 | The Trustees Of Boston College | Apparatus and methods for nanolithography using nanoscale optics |
| US8816191B2 (en) * | 2005-11-29 | 2014-08-26 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
| WO2009152375A1 (en) | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Solar cell fabrication using implantation |
| DE102009024807B3 (de) | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| EP2290704A1 (en) * | 2009-08-27 | 2011-03-02 | Applied Materials, Inc. | Passivation layer for wafer based solar cells and method of manufacturing thereof |
| DE102009044052A1 (de) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls |
| KR20110049218A (ko) * | 2009-11-04 | 2011-05-12 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
| DE102011051019B4 (de) * | 2011-06-10 | 2021-10-07 | Hanwha Q Cells Gmbh | Solarzellenherstellungsverfahren |
| CN102222706B (zh) * | 2011-06-28 | 2012-11-14 | 厦门市三安光电科技有限公司 | 一种高倍聚光太阳能电池芯片 |
| KR20140110851A (ko) | 2011-11-08 | 2014-09-17 | 인테벡, 인코포레이티드 | 기판 프로세싱 시스템 및 방법 |
| KR101860919B1 (ko) | 2011-12-16 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
| CN110546768B (zh) * | 2017-04-27 | 2023-04-07 | 京瓷株式会社 | 太阳能电池元件以及太阳能电池元件的制造方法 |
| US10971647B2 (en) * | 2018-05-07 | 2021-04-06 | Amberwave, Inc. | Solar cell via thin film solder bond |
| CN113675722B (zh) * | 2021-07-14 | 2024-10-29 | 威科赛乐微电子股份有限公司 | 一种Cap layer层蚀刻优化方法 |
| CN118156325A (zh) | 2022-12-07 | 2024-06-07 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
| CN118156335A (zh) * | 2022-12-07 | 2024-06-07 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
| CN116995134A (zh) | 2023-05-16 | 2023-11-03 | 天合光能股份有限公司 | 太阳能电池的制作方法 |
| CN116387371B (zh) * | 2023-06-02 | 2023-09-29 | 天合光能股份有限公司 | 太阳能电池及其制作方法、光伏组件及光伏系统 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4135950A (en) * | 1975-09-22 | 1979-01-23 | Communications Satellite Corporation | Radiation hardened solar cell |
| US4322571A (en) * | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
| US4367368A (en) * | 1981-05-15 | 1983-01-04 | University Patents Inc. | Solar cell |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165774U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-11-20 | 1976-05-24 | ||
| US4253881A (en) * | 1978-10-23 | 1981-03-03 | Rudolf Hezel | Solar cells composed of semiconductive materials |
| DE3016498A1 (de) * | 1980-04-29 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Lichtempfindliche halbleiterbauelemente |
| JPS577168A (en) * | 1980-06-14 | 1982-01-14 | Shunpei Yamazaki | Manufacture of mis photoelectric converter |
| FR2499316A1 (fr) * | 1981-02-04 | 1982-08-06 | Radiotechnique Compelec | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
| FR2556135B1 (fr) * | 1983-12-02 | 1986-09-19 | Thomson Csf | Photo-diode a l'antimoniure d'indium et procede de fabrication |
| DE3536299A1 (de) * | 1985-10-11 | 1987-04-16 | Nukem Gmbh | Solarzelle aus silizium |
-
1987
- 1987-04-13 DE DE19873712503 patent/DE3712503A1/de not_active Withdrawn
-
1988
- 1988-03-30 DE DE8888105201T patent/DE3874184D1/de not_active Expired - Fee Related
- 1988-03-30 ES ES198888105201T patent/ES2033972T3/es not_active Expired - Lifetime
- 1988-03-30 EP EP88105201A patent/EP0286917B1/de not_active Expired - Lifetime
- 1988-03-31 US US07/176,286 patent/US4886555A/en not_active Expired - Fee Related
- 1988-04-05 IN IN280/CAL/88A patent/IN171031B/en unknown
- 1988-04-12 AU AU14522/88A patent/AU600573B2/en not_active Ceased
- 1988-04-13 CN CN88101994A patent/CN1011452B/zh not_active Expired
- 1988-04-13 JP JP63091234A patent/JPS6453468A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4135950A (en) * | 1975-09-22 | 1979-01-23 | Communications Satellite Corporation | Radiation hardened solar cell |
| US4322571A (en) * | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
| US4367368A (en) * | 1981-05-15 | 1983-01-04 | University Patents Inc. | Solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6453468A (en) | 1989-03-01 |
| EP0286917A2 (de) | 1988-10-19 |
| CN88101994A (zh) | 1988-10-26 |
| ES2033972T3 (es) | 1993-04-01 |
| DE3874184D1 (de) | 1992-10-08 |
| AU600573B2 (en) | 1990-08-16 |
| CN1011452B (zh) | 1991-01-30 |
| US4886555A (en) | 1989-12-12 |
| IN171031B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-07-04 |
| AU1452288A (en) | 1988-10-13 |
| EP0286917B1 (de) | 1992-09-02 |
| EP0286917A3 (en) | 1990-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: NUKEM GMBH, 8755 ALZENAU, DE |
|
| 8130 | Withdrawal |