DE3689341D1 - Verfahren zur Herstellung einer Metallsilizid-Silizium-Struktur und Metallsilizid-Silizium-Struktur. - Google Patents
Verfahren zur Herstellung einer Metallsilizid-Silizium-Struktur und Metallsilizid-Silizium-Struktur.Info
- Publication number
- DE3689341D1 DE3689341D1 DE86103209T DE3689341T DE3689341D1 DE 3689341 D1 DE3689341 D1 DE 3689341D1 DE 86103209 T DE86103209 T DE 86103209T DE 3689341 T DE3689341 T DE 3689341T DE 3689341 D1 DE3689341 D1 DE 3689341D1
- Authority
- DE
- Germany
- Prior art keywords
- metal silicide
- silicon structure
- producing
- silicon
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
- B01J37/105—Hydropyrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/717,984 US4803539A (en) | 1985-03-29 | 1985-03-29 | Dopant control of metal silicide formation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3689341D1 true DE3689341D1 (de) | 1994-01-13 |
Family
ID=24884338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86103209T Expired - Lifetime DE3689341D1 (de) | 1985-03-29 | 1986-03-11 | Verfahren zur Herstellung einer Metallsilizid-Silizium-Struktur und Metallsilizid-Silizium-Struktur. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4803539A (de) |
EP (1) | EP0199939B1 (de) |
JP (1) | JPS61226922A (de) |
CA (1) | CA1238721A (de) |
DE (1) | DE3689341D1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62145859A (ja) * | 1985-12-20 | 1987-06-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4914042A (en) * | 1986-09-30 | 1990-04-03 | Colorado State University Research Foundation | Forming a transition metal silicide radiation detector and source |
DE3728135A1 (de) * | 1987-08-22 | 1989-03-02 | Fraunhofer Ges Forschung | Schottky-diode |
JP3113270B2 (ja) * | 1990-11-16 | 2000-11-27 | 杉原林機株式会社 | コード型草刈機の刈刃装置におけるコード繰出し機構 |
US5525828A (en) * | 1991-10-31 | 1996-06-11 | International Business Machines Corporation | High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields |
DE4402070C2 (de) * | 1994-01-25 | 1997-10-16 | Gold Star Electronics | Verfahren zum Herstellen eines aus PtSi-Platinsilizid bestehenden Kontaktstopfens |
US5409853A (en) * | 1994-05-20 | 1995-04-25 | International Business Machines Corporation | Process of making silicided contacts for semiconductor devices |
US5665993A (en) * | 1994-09-29 | 1997-09-09 | Texas Instruments Incorporated | Integrated circuit including a FET device and Schottky diode |
US5851891A (en) * | 1997-04-21 | 1998-12-22 | Advanced Micro Devices, Inc. | IGFET method of forming with silicide contact on ultra-thin gate |
ATE396501T1 (de) * | 1998-02-07 | 2008-06-15 | Sirenza Microdevices Inc | Rf-mos-transistor |
JP4221100B2 (ja) * | 1999-01-13 | 2009-02-12 | エルピーダメモリ株式会社 | 半導体装置 |
US6649480B2 (en) * | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6703688B1 (en) * | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) * | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US7196382B2 (en) * | 2001-05-26 | 2007-03-27 | Ihp Gmbh Innovations For High Performance Microelectronics/ Institut Fur Innovative Mikroelektronik | Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer |
DE10208904B4 (de) | 2002-02-28 | 2007-03-01 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung unterschiedlicher Silicidbereiche auf verschiedenen Silicium enthaltenden Gebieten in einem Halbleiterelement |
DE10208728B4 (de) | 2002-02-28 | 2009-05-07 | Advanced Micro Devices, Inc., Sunnyvale | Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen |
DE10209059B4 (de) * | 2002-03-01 | 2007-04-05 | Advanced Micro Devices, Inc., Sunnyvale | Ein Halbleiterelement mit unterschiedlichen Metall-Halbleiterbereichen, die auf einem Halbleitergebiet gebildet sind, und Verfahren zur Herstellung des Halbleiterelements |
US7615829B2 (en) * | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
US6995430B2 (en) * | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
WO2003105206A1 (en) * | 2002-06-10 | 2003-12-18 | Amberwave Systems Corporation | Growing source and drain elements by selecive epitaxy |
US6982474B2 (en) * | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
DE10234931A1 (de) | 2002-07-31 | 2004-02-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Metallsilizidgates in einer standardmässigen MOS-Prozesssequenz |
US6815235B1 (en) | 2002-11-25 | 2004-11-09 | Advanced Micro Devices, Inc. | Methods of controlling formation of metal silicide regions, and system for performing same |
KR100728173B1 (ko) * | 2003-03-07 | 2007-06-13 | 앰버웨이브 시스템즈 코포레이션 | 쉘로우 트렌치 분리법 |
JP4969779B2 (ja) | 2004-12-28 | 2012-07-04 | 株式会社東芝 | 半導体装置の製造方法 |
FR2928028B1 (fr) * | 2008-02-27 | 2011-07-15 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. |
FR2928029B1 (fr) * | 2008-02-27 | 2011-04-08 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant. |
US20130299937A1 (en) * | 2012-04-26 | 2013-11-14 | Applied Materials, Inc. | Method and apparatus for ultra-low contact resistance for semiconductor channel n-fet |
CN109904251B (zh) * | 2019-03-12 | 2021-03-30 | 中国科学院理化技术研究所 | 一种B掺杂的NiSi/n-Si光电阳极及其制备方法和应用 |
US11348839B2 (en) | 2019-07-31 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices with multiple silicide regions |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3927225A (en) * | 1972-12-26 | 1975-12-16 | Gen Electric | Schottky barrier contacts and methods of making same |
US3995301A (en) * | 1973-03-23 | 1976-11-30 | Ibm Corporation | Novel integratable Schottky Barrier structure and a method for the fabrication thereof |
US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
US4333099A (en) * | 1978-02-27 | 1982-06-01 | Rca Corporation | Use of silicide to bridge unwanted polycrystalline silicon P-N junction |
US4329706A (en) * | 1979-03-01 | 1982-05-11 | International Business Machines Corporation | Doped polysilicon silicide semiconductor integrated circuit interconnections |
US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
US4336550A (en) * | 1980-03-20 | 1982-06-22 | Rca Corporation | CMOS Device with silicided sources and drains and method |
US4259680A (en) * | 1980-04-17 | 1981-03-31 | Bell Telephone Laboratories, Incorporated | High speed lateral bipolar transistor |
US4389257A (en) * | 1981-07-30 | 1983-06-21 | International Business Machines Corporation | Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes |
-
1985
- 1985-03-29 US US06/717,984 patent/US4803539A/en not_active Expired - Fee Related
- 1985-12-27 JP JP60293410A patent/JPS61226922A/ja active Granted
-
1986
- 1986-01-14 CA CA000499556A patent/CA1238721A/en not_active Expired
- 1986-03-11 EP EP86103209A patent/EP0199939B1/de not_active Expired - Lifetime
- 1986-03-11 DE DE86103209T patent/DE3689341D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0199939B1 (de) | 1993-12-01 |
JPS61226922A (ja) | 1986-10-08 |
CA1238721A (en) | 1988-06-28 |
EP0199939A2 (de) | 1986-11-05 |
EP0199939A3 (en) | 1988-12-14 |
US4803539A (en) | 1989-02-07 |
JPH0453090B2 (de) | 1992-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |