DE3687479T2 - Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen. - Google Patents
Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen.Info
- Publication number
- DE3687479T2 DE3687479T2 DE8686106238T DE3687479T DE3687479T2 DE 3687479 T2 DE3687479 T2 DE 3687479T2 DE 8686106238 T DE8686106238 T DE 8686106238T DE 3687479 T DE3687479 T DE 3687479T DE 3687479 T2 DE3687479 T2 DE 3687479T2
- Authority
- DE
- Germany
- Prior art keywords
- resist
- production
- electronic parts
- polymers soluble
- silsesquioxane polymers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9803285A JPS61256347A (ja) | 1985-05-10 | 1985-05-10 | アルカリ可溶性シロキサン重合体 |
JP18295085A JPS6243426A (ja) | 1985-08-22 | 1985-08-22 | アルカリ可溶性シルメチレン重合体 |
JP23634485A JPS6296526A (ja) | 1985-10-24 | 1985-10-24 | アルカリ可溶性ポリオルガノシルセスキオキサン重合体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3687479D1 DE3687479D1 (de) | 1993-02-25 |
DE3687479T2 true DE3687479T2 (de) | 1993-06-03 |
Family
ID=27308561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686106238T Expired - Fee Related DE3687479T2 (de) | 1985-05-10 | 1986-05-07 | Verwendung von in alkalische milieu loeslichen silsesquioxanpolymeren in einem resist zur herstellung von electronischen teilen. |
Country Status (2)
Country | Link |
---|---|
US (1) | US4745169A (de) |
DE (1) | DE3687479T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264319A (en) * | 1985-05-10 | 1993-11-23 | Hitachi, Ltd. | Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor |
US4822716A (en) * | 1985-12-27 | 1989-04-18 | Kabushiki Kaisha Toshiba | Polysilanes, Polysiloxanes and silicone resist materials containing these compounds |
JP2507481B2 (ja) * | 1987-05-21 | 1996-06-12 | 株式会社東芝 | ポリシラン及び感光性組成物 |
US4996277A (en) * | 1988-02-08 | 1991-02-26 | Bradshaw Jerald S | Novel oligoethylene oxide-containing alkenes, alkoxysilanes, and polysiloxanes |
JP2630986B2 (ja) * | 1988-05-18 | 1997-07-16 | 東レ・ダウコーニング・シリコーン株式会社 | アルカリ可溶性オルガノポリシロキサン |
US4909935A (en) * | 1988-06-03 | 1990-03-20 | Brigham Young University | Chromatographic arylcarboxamide polysiloxanes |
JP2648969B2 (ja) * | 1989-07-28 | 1997-09-03 | 富士写真フイルム株式会社 | 感光性組成物 |
US5110711A (en) * | 1989-10-10 | 1992-05-05 | International Business Machines Corporation | Method for forming a pattern |
US5059512A (en) * | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
JPH082911B2 (ja) * | 1990-06-06 | 1996-01-17 | 信越化学工業株式会社 | 1,3―ビス(p―ヒドロキシベンジル)―1,1,3,3―テトラメチルジシロキサン及びその製造方法 |
EP0506425A3 (de) * | 1991-03-26 | 1992-12-02 | Kabushiki Kaisha Toshiba | Monomolekularer Polysilanfilm und aus Polysilanschichten aufgebauter Film |
EP0568476B1 (de) * | 1992-04-30 | 1995-10-11 | International Business Machines Corporation | Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie |
US5378789A (en) * | 1992-05-14 | 1995-01-03 | General Electric Company | Phenol-modified silicones |
US5385804A (en) * | 1992-08-20 | 1995-01-31 | International Business Machines Corporation | Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer |
US5272013A (en) * | 1992-08-21 | 1993-12-21 | General Electric Company | Articles made of high refractive index phenol-modified siloxanes |
US5338818A (en) * | 1992-09-10 | 1994-08-16 | International Business Machines Corporation | Silicon containing positive resist for DUV lithography |
JP2547944B2 (ja) * | 1992-09-30 | 1996-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法 |
US5484867A (en) * | 1993-08-12 | 1996-01-16 | The University Of Dayton | Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments |
US5412053A (en) * | 1993-08-12 | 1995-05-02 | The University Of Dayton | Polymers containing alternating silsesquioxane and bridging group segments and process for their preparation |
US5683540A (en) * | 1995-06-26 | 1997-11-04 | Boeing North American, Inc. | Method and system for enhancing the surface of a material for cleaning, material removal or as preparation for adhesive bonding or etching |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
EP1190277B1 (de) * | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie |
JP3604007B2 (ja) * | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
US7456488B2 (en) * | 2002-11-21 | 2008-11-25 | Advanced Technology Materials, Inc. | Porogen material |
US7423166B2 (en) * | 2001-12-13 | 2008-09-09 | Advanced Technology Materials, Inc. | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
US7108771B2 (en) * | 2001-12-13 | 2006-09-19 | Advanced Technology Materials, Inc. | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films |
JP4557497B2 (ja) * | 2002-03-03 | 2010-10-06 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物 |
JP2004038142A (ja) | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
WO2004037866A2 (en) * | 2002-10-21 | 2004-05-06 | Shipley Company L.L.C. | Photoresists containing sulfonamide component |
JP2004177952A (ja) | 2002-11-20 | 2004-06-24 | Rohm & Haas Electronic Materials Llc | 多層フォトレジスト系 |
KR20040044369A (ko) * | 2002-11-20 | 2004-05-28 | 쉬플리 캄파니, 엘.엘.씨. | 다층 포토레지스트 시스템 |
KR20050084283A (ko) * | 2002-12-02 | 2005-08-26 | 토쿄오오카코교 가부시기가이샤 | 래더형 실리콘 공중합체 |
US20040229159A1 (en) * | 2003-02-23 | 2004-11-18 | Subbareddy Kanagasabapathy | Fluorinated Si-polymers and photoresists comprising same |
CN1570762B (zh) * | 2003-03-03 | 2010-10-13 | 罗姆和哈斯电子材料有限责任公司 | 聚合物和含有该聚合物的光刻胶 |
EP1650250A4 (de) * | 2003-07-29 | 2009-08-12 | Toagosei Co Ltd | Siliciumhaltiges polymer, herstellungsverfahren dafür, wärmebeständige harzzusammensetzung und wärmebeständige folie |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7659050B2 (en) * | 2005-06-07 | 2010-02-09 | International Business Machines Corporation | High resolution silicon-containing resist |
US8053375B1 (en) | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
DE102008057684A1 (de) * | 2008-11-17 | 2010-05-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dialkoxy- oder Dihydroxyphenylreste enthaltende Silane, daraus hergestellte Klebstoffe sowie Verfahren zur Herstellung der Silane und der Klebstoffe |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
KR20110112641A (ko) * | 2010-04-07 | 2011-10-13 | 한국과학기술연구원 | 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328450A (en) * | 1963-01-09 | 1967-06-27 | Dow Corning | Silylalkyl phenols |
US3837897A (en) * | 1972-05-04 | 1974-09-24 | Owens Corning Fiberglass Corp | Glass fiber reinforced elastomers |
EP0076656B1 (de) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden |
-
1986
- 1986-05-05 US US06/859,370 patent/US4745169A/en not_active Expired - Fee Related
- 1986-05-07 DE DE8686106238T patent/DE3687479T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4745169A (en) | 1988-05-17 |
DE3687479D1 (de) | 1993-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |